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    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    4.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20160380184A1

    公开(公告)日：2016-12-29

    申请号：US15259408

    申请日：2016-09-08

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Yushi KATO ,  Tadaomi DAIBOU ,  Yuichi OHSAWA ,  Shumpei OMINE ,  Naoki HASE

    IPC: H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.

    Abstract translation: 根据实施例的磁阻元件包括：第一磁性层; 第二磁性层; 设置在所述第一磁性层和所述第二磁性层之间的第一非磁性层; 设置在所述第一磁性层和所述第一非磁性层之间的第三磁性层; 以及具有非晶结构的层，所述层含有包含在所述第一磁性层中的两个或更多个元素，所述层设置在所述第一磁性层和所述第三磁性层之间。

    MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY
    5.
    发明申请
    MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY 有权
    磁阻元件和磁记忆

    公开(公告)号：US20140131649A1

    公开(公告)日：2014-05-15

    申请号：US14023772

    申请日：2013-09-11

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Tadaomi DAIBOU ,  Eiji KITAGAWA ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Yushi KATO ,  Megumi YAKABE

    IPC: H01L43/02

    CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10

    Abstract: According to one embodiment, a magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer.

    Abstract translation: 根据一个实施例，磁阻元件包括具有第一表面和第二表面的第一磁性层，第二磁性层，设置在第一表面和第二磁性层之间的中间层，设置在第二表面上的含有B和 选自Hf，Al，Mg和Ti并具有第三和第四表面的至少一种元素，设置在第四表面上并含有B和选自Hf，Al和Mg中的至少一种元素的第二层，以及绝缘层 设置在中间层的侧壁上，并且包含选自第二层中所含的Hf，Al和Mg中的至少一种元素。

    MAGNETIC MEMORY
    6.
    发明申请
    MAGNETIC MEMORY 有权
    磁记忆

    公开(公告)号：US20170076769A1

    公开(公告)日：2017-03-16

    申请号：US15262139

    申请日：2016-09-12

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Satoshi SHIROTORI ,  Hiroaki YODA ,  Yuichi OHSAWA ,  Yuuzo KAMIGUCHI ,  Naoharu SHIMOMURA ,  Tadaomi DAIBOU ,  Tomoaki INOKUCHI

    IPC: G11C11/16 ,  H01L43/10 ,  H01L23/528 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L23/528 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

    Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.

    Abstract translation: 实施例的磁存储器包括：第一至第三端子; 包括第一磁性层，第二磁性层和第一非磁性层的磁阻元件; 包括第一至第三部分的第二非磁性层，第一部分位于第二和第三部分之间，第二和第三部分分别电连接到第二和第三端子，第一磁性层设置在第一部分之间 和第一非磁性层; 以及包括第四至第六部分的第三非磁性层，所述第四部分位于所述第一部分和所述第一磁性层之间，所述第五部分包括从所述磁阻元件延伸到所述第二端子的第一区域，所述第六部分包括第二部分， 区域从磁阻元件延伸到第三端子。

    MAGNETIC MEMORY
    9.
    发明申请
    MAGNETIC MEMORY 审中-公开
    磁记忆

    公开(公告)号：US20170077177A1

    公开(公告)日：2017-03-16

    申请号：US15264111

    申请日：2016-09-13

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Naoharu SHIMOMURA ,  Hiroaki YODA ,  Tadaomi DAIBOU ,  Yuuzo KAMIGUCHI ,  Yuichi OHSAWA ,  Tomoaki INOKUCHI ,  Satoshi SHIROTORI

    IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16

    CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/11582 ,  H01L28/00 ,  H01L43/02

    Abstract: A magnetic memory of an embodiment includes: a first nonmagnetic layer including a first and second faces; a first and second wirings disposed on a side of the first face; a third wiring disposed on a side of the second face; a first transistor, one of the source and the drain being connected to the first wiring, the other one being connected to the first nonmagnetic layer; a second transistor, one of source and drain being connected to the second wiring, the other one being connected to the first nonmagnetic layer; a magnetoresistive element disposed between the first nonmagnetic layer and the third wiring, a first terminal of the magnetoresistive element being connected to the first nonmagnetic layer; and a third transistor, one of source and drain of the third transistor being connected to the second terminal, the other one being connected to the third wiring.

    Abstract translation: 实施例的磁存储器包括：包括第一和第二面的第一非磁性层; 布置在所述第一面的一侧上的第一和第二布线; 设置在所述第二面的一侧的第三布线; 第一晶体管，源极和漏极中的一个连接到第一布线，另一个连接到第一非磁性层; 第二晶体管，源极和漏极之一连接到第二布线，另一个连接到第一非磁性层; 设置在第一非磁性层和第三布线之间的磁阻元件，磁阻元件的第一端子连接到第一非磁性层; 以及第三晶体管，第三晶体管的源极和漏极之一连接到第二端子，另一个连接到第三布线。

    MAGNETIC MEMORY
    10.
    发明申请
    MAGNETIC MEMORY 审中-公开
    磁记忆

    公开(公告)号：US20170076770A1

    公开(公告)日：2017-03-16

    申请号：US15263852

    申请日：2016-09-13

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Tadaomi DAIBOU ,  Naoharu SHIMOMURA ,  Yuuzo KAMIGUCHI ,  Hiroaki YODA ,  Yuichi OHSAWA ,  Tomoaki INOKUCHI ,  Satoshi SHIROTORI

    IPC: G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

    CPC classification number: H01L27/228 ,  G11C5/06 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer disposed between the region and the first magnetic layer; and a nonmagnetic intermediate layer disposed between the first magnetic layer and the second magnetic layer; a transistor including a third terminal, a fourth terminal, and a control terminal, the third terminal being electrically connected to the first terminal; a first wiring electrically connected to the first magnetic layer and the fourth terminal; a second wiring electrically connected to the control terminal; and a third wiring electrically connected to the second terminal.

    Abstract translation: 根据实施例的磁存储器包括：导电非磁性层，包括第一端子，第二端子和第一端子和第二端子之间的区域; 磁阻元件，包括：第一磁性层; 设置在所述区域和所述第一磁性层之间的第二磁性层; 以及设置在所述第一磁性层和所述第二磁性层之间的非磁性中间层; 包括第三端子，第四端子和控制端子的晶体管，所述第三端子电连接到所述第一端子; 电连接到第一磁性层和第四端子的第一布线; 电连接到所述控制端子的第二布线; 以及电连接到第二端子的第三布线。

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