Invention Application
- Patent Title: MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Patent Title (中): 磁性元件和磁记忆
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Application No.: US14183122Application Date: 2014-02-18
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Publication No.: US20140159177A1Publication Date: 2014-06-12
- Inventor: Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
- Applicant: WPI-AIMR, Tohoku University , Kabushiki Kaisha Toshiba
- Applicant Address: JP Sendai-Shi JP Minato-ku
- Assignee: WPI-AIMR, Tohoku University,Kabushiki Kaisha Toshiba
- Current Assignee: WPI-AIMR, Tohoku University,Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Sendai-Shi JP Minato-ku
- Priority: JP2011-068868 20110325
- Main IPC: H01L43/10
- IPC: H01L43/10
Abstract:
A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
Public/Granted literature
- US09087980B2 Magnetoresistive element and magnetic memory Public/Granted day:2015-07-21
Information query
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