Invention Application
- Patent Title: MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Patent Title (中): 磁性元件和磁记忆
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Application No.: US15259525Application Date: 2016-09-08
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Publication No.: US20160380185A1Publication Date: 2016-12-29
- Inventor: Yushi KATO , Tadaomi DAIBOU , Qinli MA , Atsushi SUGIHARA , Shigemi MIZUKAMI , Terunobu MIYAZAKI
- Applicant: Kabushiki Kaisha Toshiba , Tohoku University
- Applicant Address: JP Minato-ku JP Sendai-shi
- Assignee: Kabushiki Kaisha Toshiba,Tohoku University
- Current Assignee: Kabushiki Kaisha Toshiba,Tohoku University
- Current Assignee Address: JP Minato-ku JP Sendai-shi
- Priority: JP2014-050858 20140313
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L27/22 ; H01L43/10 ; H01L43/02 ; G11C11/16
Abstract:
A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing Mn2VZ, where V represents vanadium, and Z represents at least one element of Al or Ga.
Public/Granted literature
- US10103321B2 Magnetoresistive element and magnetic memory Public/Granted day:2018-10-16
Information query
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