公开(公告)号：US20150076635A1

公开(公告)日：2015-03-19

申请号：US14549254

申请日：2014-11-20

Applicant: KABUSHIKI KAISHA TOSHIBA ,  WPI-AIMR, Tohoku University

Inventor： Tadaomi DAIBOU ,  Junichi ITO ,  Tadashi KAI ,  Minoru AMANO ,  Hiroaki YODA ,  Terunobu MIYAZAKI ,  Shigemi MIZUKAMI ,  Koji ANDO ,  Kay YAKUSHIJI ,  Shinji YUASA ,  Hitoshi KUBOTA ,  Akio FUKUSHIMA ,  Taro NAGAHAMA ,  Takahide KUBOTA

IPC: H01L27/22 ,  H01L43/10 ,  H01L23/528 ,  H01L43/02

CPC classification number: H01L43/10 ,  H01L23/528 ,  H01L27/222 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x

Abstract translation: 根据实施例的磁阻元件包括：基底层; 第一磁性层，其形成在所述基底层上，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜，所述第一磁性膜包括Mn x Ga 100-x（45≤n1E; x <64原子％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜，所述第二磁性膜包括MnyGa100-y（45＆lt; IL1; y <64原子％）， 。 第一和第二磁性层包括彼此不同的Mn组成比，第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。

公开(公告)号：US20140269038A1

公开(公告)日：2014-09-18

申请号：US14198982

申请日：2014-03-06

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoharu SHIMOMURA ,  Eiji KITAGAWA ,  Minoru AMANO ,  Daisuke SAIDA ,  Kay YAKUSHIJI ,  Takayuki NOZAKI ,  Shinji YUASA ,  Akio FUKUSHIMA ,  Hiroshi IMAMURA ,  Hitoshi KUBOTA

IPC: G11C11/16 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11C11/155 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.

Abstract translation: 根据实施例的磁存储器包括至少一个MTJ元件，MTJ元件包括：磁性多层结构，其包括其中固定有磁化方向的第一磁性层，磁化方向可变的第二磁性层， 以及位于所述第一和第二磁性层之间的隧道势垒层; 设置在所述磁性多层结构的第一表面上的第一电极; 设置在所述磁性多层结构的第二表面上的第二电极; 设置在所述磁性多层结构的侧面的绝缘膜; 以及设置在所述磁性多层结构的侧表面上的绝缘膜位于它们之间的控制电极，在读取操作中将电压施加到所述控制电极，这增加了用于改变所述第二磁性层的磁化的能量势垒。

公开(公告)号：US20160118098A1

公开(公告)日：2016-04-28

申请号：US14947643

申请日：2015-11-20

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoharu SHIMOMURA ,  Eiji KITAGAWA ,  Minoru AMANO ,  Daisuke SAIDA ,  Kay YAKUSHIJI ,  Takayuki NOZAKI ,  Shinji YUASA ,  Akio FUKUSHIMA ,  Hiroshi IMAMURA ,  Hitoshi KUBOTA

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11C11/155 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.

Abstract translation: 根据实施例的磁存储器包括至少一个MTJ元件，MTJ元件包括：磁性多层结构，其包括其中固定有磁化方向的第一磁性层，磁化方向可变的第二磁性层， 以及位于所述第一和第二磁性层之间的隧道势垒层; 设置在所述磁性多层结构的第一表面上的第一电极; 设置在所述磁性多层结构的第二表面上的第二电极; 设置在所述磁性多层结构的侧面的绝缘膜; 以及设置在所述磁性多层结构的侧表面上的绝缘膜位于它们之间的控制电极，在读取操作中将电压施加到所述控制电极，这增加了用于改变所述第二磁性层的磁化的能量势垒。

公开(公告)号：US20140077319A1

公开(公告)日：2014-03-20

申请号：US13802693

申请日：2013-03-13

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Kenji NOMA ,  Hitoshi KUBOTA ,  Kay YAKUSHIJI

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a magnetoresistive effect element includes a multilayer film including a transition metal nitride film, an antiferromagnetic film, a first ferromagnetic film, a nonmagnetic film, and a perpendicular magnetic anisotropic film stacked in that order. The first ferromagnetic film has a negative perpendicular magnetic anisotropic constant. Magnetization of the first ferromagnetic film is caused to point in a direction perpendicular to the film surface forcibly by an exchange-coupling magnetic field generated by the antiferromagnetic film.

Abstract translation: 根据一个实施例，磁阻效应元件包括多层膜，其包括依次层叠的过渡金属氮化物膜，反铁磁膜，第一铁磁膜，非磁性膜和垂直磁性各向异性膜。 第一铁磁膜具有负垂直磁各向异性常数。 通过由反铁磁膜产生的交换耦合磁场强制地使第一铁磁膜的磁化指向与膜表面垂直的方向。