公开(公告)号：US20160276008A1

公开(公告)日：2016-09-22

申请号：US15067723

申请日：2016-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Daisuke SAIDA ,  Susumu Takeda ,  Hiroki Noguchi ,  Kazuhiko Abe

IPC: G11C11/16 ,  G11C7/12

CPC classification number: G11C11/1659 ,  G06F12/0811 ,  G06F2212/222 ,  G06F2212/502 ,  G06F2212/601 ,  G11C7/12 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/18 ,  G11C29/023 ,  G11C29/028 ,  Y02D10/13

Abstract: A memory system has a non-volatile memory of which access speed is electrically controlled, a control circuitry that selects a first region which is a portion of a memory region of the non-volatile memory, and a boost circuit that adjusts an access speed of the first region to be higher than an access speed of a second region different from the first region in the memory region.

Abstract translation: 存储器系统具有电磁控制其访问速度的非易失性存储器，选择作为非易失性存储器的存储区域的一部分的第一区域的控制电路和调整非易失性存储器的存取速度的升压电路 所述第一区域高于与所述存储区域中的所述第一区域不同的第二区域的访问速度。

公开(公告)号：US20170077394A1

公开(公告)日：2017-03-16

申请号：US15262403

申请日：2016-09-12

Applicant: Kabushiki Kaisha Toshiba

Inventor： Daisuke SAIDA

IPC: H01L43/10 ,  H01L43/08 ,  G11B5/31 ,  H01L43/02

CPC classification number: H01L43/10 ,  G11B5/3906 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  H01L27/228 ,  H01L43/08

Abstract: According to one embodiment, a magnetic element includes a first stacked unit and a third ferromagnetic layer. The first stacked unit includes first and second ferromagnetic layers, and a first non-magnetic layer. The first ferromagnetic layer has a first magnetization. The second ferromagnetic layer is separated from the first ferromagnetic layer in a first direction, and has a second magnetization. The first non-magnetic layer is provided between the first and second ferromagnetic layers. The third ferromagnetic layer is stacked with the first stacked unit in the first direction, and has a third magnetization. 2γNzMs is not less than 0.9 times of a magnetic resonance frequency (Hz) of the third ferromagnetic layer, when the second magnetization is Ms (emu/cc), a demagnetizing coefficient of the second ferromagnetic layer is Nz, and a gyro magnetic constant is γ (Hz/Oe).

Abstract translation: 根据一个实施例，磁性元件包括第一堆叠单元和第三铁磁层。 第一堆叠单元包括第一和第二铁磁层和第一非磁性层。 第一铁磁层具有第一磁化强度。 第二铁磁层在第一方向上与第一铁磁层分离，并具有第二磁化。 第一非磁性层设置在第一和第二铁磁层之间。 第三铁磁层与第一堆叠单元沿第一方向堆叠，并具有第三磁化强度。 2γNzM不小于第三铁磁层的磁共振频率（Hz）的0.9倍，当第二磁化强度为Ms（emu / cc）时，第二铁磁层的去磁系数为Nz，陀螺磁常数为 γ（Hz / Oe）。

公开(公告)号：US20160365509A1

公开(公告)日：2016-12-15

申请号：US15248596

申请日：2016-08-26

Applicant: Kabushiki Kaisha Toshiba

Inventor： Daisuke SAIDA ,  Naoharu SHIMOMURA

IPC: H01L43/10 ,  H01F1/03 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  H01F1/0306 ,  H01F10/1936 ,  H01F10/3286 ,  H01F10/3295 ,  H01L27/228 ,  H01L43/08

Abstract: According to one embodiment, a memory device includes a stacked body and a controller. The stacked body includes a first magnetic layer, a second magnetic layer stacked with the first magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second ferromagnetic layer. The second ferromagnetic layer includes a first portion and a second portion stacked with the first portion. The controller causes a current to flow in the stacked body in a programming period. The programming period includes a first and a second period. The current has a first value in the first period and a second value in the second period. The second value is less than the first value.

Abstract translation: 根据一个实施例，存储器件包括堆叠体和控制器。 层叠体包括第一磁性层，与第一磁性层堆叠的第二磁性层和设置在第一磁性层和第二铁磁层之间的第一非磁性层。 第二铁磁层包括与第一部分堆叠的第一部分和第二部分。 控制器在编程周期内导致电流在堆叠体中流动。 编程周期包括第一和第二周期。 当前在第一时段中具有第一个值，在第二个周期中具有第二个值。 第二个值小于第一个值。

公开(公告)号：US20190035449A1

公开(公告)日：2019-01-31

申请号：US15911211

申请日：2018-03-05

Applicant: Kabushiki Kaisha Toshiba

Inventor： Daisuke SAIDA ,  Yousuke ISOWAKI ,  Michael Arnaud QUINSAT ,  Kenichiro YAMADA ,  Kosuke TATSUMURA

IPC: G11C11/16 ,  G06N7/00

CPC classification number: G11C11/1675 ,  G06N3/0445 ,  G06N3/0454 ,  G06N3/0472 ,  G06N3/0635 ,  G06N3/084 ,  G06N7/005 ,  G11C11/161 ,  G11C11/1673

Abstract: A memory system has a nonvolatile memory having a plurality of readable and writable memory cells, a write voltage control unit that controls at least one of a voltage value and a pulse width of a write voltage of the nonvolatile memory in accordance with a weight of a signal processing path or a signal processing node, a write unit that writes data in two or more memory cell groups among the plurality of memory cells using the write voltage controlled by the write voltage control unit, a reversal probability detection unit that detects a reversal probability of the memory cell group when writing data is written by the write unit, and a weight conversion unit that converts the detected reversal probability into a weight.

公开(公告)号：US20160118098A1

公开(公告)日：2016-04-28

申请号：US14947643

申请日：2015-11-20

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoharu SHIMOMURA ,  Eiji KITAGAWA ,  Minoru AMANO ,  Daisuke SAIDA ,  Kay YAKUSHIJI ,  Takayuki NOZAKI ,  Shinji YUASA ,  Akio FUKUSHIMA ,  Hiroshi IMAMURA ,  Hitoshi KUBOTA

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11C11/155 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.

Abstract translation: 根据实施例的磁存储器包括至少一个MTJ元件，MTJ元件包括：磁性多层结构，其包括其中固定有磁化方向的第一磁性层，磁化方向可变的第二磁性层， 以及位于所述第一和第二磁性层之间的隧道势垒层; 设置在所述磁性多层结构的第一表面上的第一电极; 设置在所述磁性多层结构的第二表面上的第二电极; 设置在所述磁性多层结构的侧面的绝缘膜; 以及设置在所述磁性多层结构的侧表面上的绝缘膜位于它们之间的控制电极，在读取操作中将电压施加到所述控制电极，这增加了用于改变所述第二磁性层的磁化的能量势垒。

公开(公告)号：US20140078807A1

公开(公告)日：2014-03-20

申请号：US14078228

申请日：2013-11-12

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shiho NAKAMURA ,  Hirofumi MORISE ,  Satoshi YANAGI ,  Daisuke SAIDA ,  Akira KIKITSU

IPC: G11C11/22

CPC classification number: G11C11/22 ,  G11B5/66 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675

Abstract: An example magnetic recording device includes a magnetic recording section and a magnetization oscillator and a first nonmagnetic layer disposed between the magnetic recording section and the magnetization oscillator. The magnetic recording section includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; and a second nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. The magnetization oscillator includes a third ferromagnetic layer with a variable magnetization direction; a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction; and a third nonmagnetic layer disposed between the third ferromagnetic layer and the fourth ferromagnetic layer.

Abstract translation: 示例性的磁记录装置包括磁记录部和磁化振荡器以及设置在磁记录部和磁化振荡器之间的第一非磁性层。 磁记录部分包括具有在第一方向上基本固定的磁化的第一铁磁层; 具有可变磁化方向的第二铁磁层; 以及设置在第一铁磁层和第二铁磁层之间的第二非磁性层。 磁化振荡器包括具有可变磁化方向的第三铁磁层; 具有在第二方向上基本固定的磁化的第四铁磁层; 以及设置在第三铁磁层和第四铁磁层之间的第三非磁性层。

公开(公告)号：US20170279037A1

公开(公告)日：2017-09-28

申请号：US15265080

申请日：2016-09-14

Applicant: Kabushiki Kaisha Toshiba

Inventor： Daisuke SAIDA ,  Shogo ITAI ,  Chikayoshi KAMATA

IPC: H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  H01L43/02 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer, a second magnetic layer, a third magnetic layer, and a first non-magnetic layer. The third magnetic layer is provided between a first part of the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the third magnetic layer. The first magnetic layer further includes a second part. At least a portion of the second part overlaps at least a portion of the third magnetic layer in a second direction orthogonal to a first direction from the first part toward the second magnetic layer.

公开(公告)号：US20150014756A1

公开(公告)日：2015-01-15

申请号：US14504140

申请日：2014-10-01

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tadaomi DAIBOU ,  Minoru AMANO ,  Daisuke SAIDA ,  Junichi ITO ,  Yuichi OHSAWA ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Hiroaki YODA

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

Abstract translation: 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

公开(公告)号：US20160379698A1

公开(公告)日：2016-12-29

申请号：US15263952

申请日：2016-09-13

Applicant: Kabushiki Kaisha Toshiba

Inventor： Daisuke SAIDA ,  Minoru AMANO ,  Jyunichi OZEKI ,  Naoharu SHIMOMURA

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/1936 ,  H01F10/3277 ,  H01F10/3286 ,  H01F10/3295 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory element includes a stacked structure. The stacked structure includes a first and a second stacked member. The first stacked member includes a first and second ferromagnetic layer. A magnetic resonance frequency of the second ferromagnetic layer is a first frequency. A direction of a magnetization of the second ferromagnetic layer is settable to a direction of a first current when a magnetic field of the first frequency is applied to the first stacked member and the first current flows in the first stacked member. The direction of the magnetization of the second ferromagnetic layer does not change when the second current smaller than the first current flows in the first stacked member. The second stacked member includes a third ferromagnetic layer. A magnetization of the third ferromagnetic layer can generate a magnetic field of the first frequency by the second current.

Abstract translation: 根据一个实施例，磁存储元件包括堆叠结构。 堆叠结构包括第一和第二堆叠构件。 第一堆叠构件包括第一和第二铁磁层。 第二铁磁层的磁共振频率是第一频率。 当第一频率的磁场施加到第一层叠构件并且第一电流在第一层叠构件中流动时，第二铁磁层的磁化方向可设定为第一电流的方向。 当小于第一电流的第二电流在第一堆叠构件中流动时，第二铁磁层的磁化方向不变。 第二堆叠构件包括第三铁磁层。 第三铁磁层的磁化可以通过第二电流产生第一频率的磁场。

公开(公告)号：US20140269038A1

公开(公告)日：2014-09-18

申请号：US14198982

申请日：2014-03-06

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoharu SHIMOMURA ,  Eiji KITAGAWA ,  Minoru AMANO ,  Daisuke SAIDA ,  Kay YAKUSHIJI ,  Takayuki NOZAKI ,  Shinji YUASA ,  Akio FUKUSHIMA ,  Hiroshi IMAMURA ,  Hitoshi KUBOTA

IPC: G11C11/16 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11C11/155 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.

Abstract translation: 根据实施例的磁存储器包括至少一个MTJ元件，MTJ元件包括：磁性多层结构，其包括其中固定有磁化方向的第一磁性层，磁化方向可变的第二磁性层， 以及位于所述第一和第二磁性层之间的隧道势垒层; 设置在所述磁性多层结构的第一表面上的第一电极; 设置在所述磁性多层结构的第二表面上的第二电极; 设置在所述磁性多层结构的侧面的绝缘膜; 以及设置在所述磁性多层结构的侧表面上的绝缘膜位于它们之间的控制电极，在读取操作中将电压施加到所述控制电极，这增加了用于改变所述第二磁性层的磁化的能量势垒。