Invention Application
- Patent Title: MAGNETIC ELEMENT AND MEMORY DEVICE
- Patent Title (中): 磁性元件和存储器件
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Application No.: US15262403Application Date: 2016-09-12
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Publication No.: US20170077394A1Publication Date: 2017-03-16
- Inventor: Daisuke SAIDA
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Priority: JP2015-183460 20150916
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L43/08 ; G11B5/31 ; H01L43/02

Abstract:
According to one embodiment, a magnetic element includes a first stacked unit and a third ferromagnetic layer. The first stacked unit includes first and second ferromagnetic layers, and a first non-magnetic layer. The first ferromagnetic layer has a first magnetization. The second ferromagnetic layer is separated from the first ferromagnetic layer in a first direction, and has a second magnetization. The first non-magnetic layer is provided between the first and second ferromagnetic layers. The third ferromagnetic layer is stacked with the first stacked unit in the first direction, and has a third magnetization. 2γNzMs is not less than 0.9 times of a magnetic resonance frequency (Hz) of the third ferromagnetic layer, when the second magnetization is Ms (emu/cc), a demagnetizing coefficient of the second ferromagnetic layer is Nz, and a gyro magnetic constant is γ (Hz/Oe).
Public/Granted literature
- US10096771B2 Magnetic element and memory device Public/Granted day:2018-10-09
Information query
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