公开(公告)号：US20190220505A1

公开(公告)日：2019-07-18

申请号：US16365163

申请日：2019-03-26

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Digital Solutions Corporation

Inventor： Daisuke SHINOHARA ,  Kazuhiko Abe ,  Hideki Ibi ,  Megumi Kobayashi ,  Satoko Kikuchi ,  Tomoko Takeyama ,  Masaya Hirabara ,  Tomoya Minatani ,  Michinari Kino ,  Yuki Kawakami ,  Yuji Tanaka

IPC: G06F17/24 ,  G06F17/27

CPC classification number: G06F17/24 ,  G06F13/00 ,  G06F17/2765

Abstract: A communication device according to an embodiment includes an interpreter, a storage, and a generator. The interpreter is configured to interpret a content of a message addressed to a target user. The storage stores information on a personal feature of the target user. The generator is configured to generate a response message simulating a response by the target user on the basis of the content of the message addressed to the target user, which is interpreted by the interpreter, and the information on the personal feature of the target user stored in the storage.

公开(公告)号：US09959919B2

公开(公告)日：2018-05-01

申请号：US15067723

申请日：2016-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Daisuke Saida ,  Susumu Takeda ,  Hiroki Noguchi ,  Kazuhiko Abe

IPC: G11C11/00 ,  G11C7/12 ,  G11C11/16 ,  G11C29/02 ,  G11C11/18 ,  G06F12/0811

CPC classification number: G11C11/1659 ,  G06F12/0811 ,  G06F2212/222 ,  G06F2212/502 ,  G06F2212/601 ,  G11C7/12 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/18 ,  G11C29/023 ,  G11C29/028 ,  Y02D10/13

Abstract: A memory system has a non-volatile memory of which access speed is electrically controlled, a control circuitry that selects a first region which is a portion of a memory region of the non-volatile memory, and a boost circuit that adjusts an access speed of the first region to be higher than an access speed of a second region different from the first region in the memory region.

公开(公告)号：US20160275967A1

公开(公告)日：2016-09-22

申请号：US15064987

申请日：2016-03-09

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA SOLUTIONS CORPORATION

Inventor： Kazuo Sumita ,  Satoshi Kamatani ,  Kazuhiko Abe ,  Kenta Cho

IPC: G10L21/10 ,  G10L15/26 ,  G10L13/02 ,  G06F17/28

CPC classification number: G10L15/26 ,  G06F17/217 ,  G06F17/289 ,  G10L13/00

Abstract: According to one embodiment, a presentation support apparatus includes a switcher, an acquirer, a recognizer and a controller. The switcher switches a first content to a second content in accordance with an instruction of a first user, the first content and the second content being presented to the first user. The acquirer acquires a speech related to the first content from the first user as a first audio signal. The recognizer performs speech recognition on the first audio signal to obtain a speech recognition result. The controller controls continuous output the first content to a second user, when the first content is switched to the second content, during a first period after presenting the speech recognition result to the second user.

Abstract translation: 根据一个实施例，呈现支持设备包括切换器，获取器，识别器和控制器。 切换器根据第一用户的指令将第一内容切换到第二内容，第一内容和第二内容被呈现给第一用户。 获取器从第一用户获取与第一内容有关的语音作为第一音频信号。 识别器对第一音频信号执行语音识别以获得语音识别结果。 当在向第二用户呈现语音识别结果之后的第一时段期间，当第一内容切换到第二内容时，控制器控制将第一内容连续输出给第二用户。

公开(公告)号：US20160276008A1

公开(公告)日：2016-09-22

申请号：US15067723

申请日：2016-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Daisuke SAIDA ,  Susumu Takeda ,  Hiroki Noguchi ,  Kazuhiko Abe

IPC: G11C11/16 ,  G11C7/12

CPC classification number: G11C11/1659 ,  G06F12/0811 ,  G06F2212/222 ,  G06F2212/502 ,  G06F2212/601 ,  G11C7/12 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/18 ,  G11C29/023 ,  G11C29/028 ,  Y02D10/13

Abstract: A memory system has a non-volatile memory of which access speed is electrically controlled, a control circuitry that selects a first region which is a portion of a memory region of the non-volatile memory, and a boost circuit that adjusts an access speed of the first region to be higher than an access speed of a second region different from the first region in the memory region.

Abstract translation: 存储器系统具有电磁控制其访问速度的非易失性存储器，选择作为非易失性存储器的存储区域的一部分的第一区域的控制电路和调整非易失性存储器的存取速度的升压电路 所述第一区域高于与所述存储区域中的所述第一区域不同的第二区域的访问速度。

公开(公告)号：US11144713B2

公开(公告)日：2021-10-12

申请号：US16365163

申请日：2019-03-26

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Digital Solutions Corporation

Inventor： Daisuke Shinohara ,  Kazuhiko Abe ,  Hideki Ibi ,  Megumi Kobayashi ,  Satoko Kikuchi ,  Tomoko Takeyama ,  Masaya Hirabara ,  Tomoya Minatani ,  Michinari Kino ,  Yuki Kawakami ,  Yuji Tanaka

IPC: G06F40/166 ,  G06F13/00 ,  G06F40/30 ,  G06F40/186 ,  G06F40/279 ,  H04L12/58

Abstract: A communication device according to an embodiment includes an interpreter, a storage, and a generator. The interpreter is configured to interpret a content of a message addressed to a target user. The storage stores information on a personal feature of the target user. The generator is configured to generate a response message simulating a response by the target user on the basis of the content of the message addressed to the target user, which is interpreted by the interpreter, and the information on the personal feature of the target user stored in the storage.