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    Nonvolatile memory device
    1.
    发明授权
    Nonvolatile memory device 有权
    非易失性存储器件

    公开(公告)号：US08848433B2

    公开(公告)日：2014-09-30

    申请号：US13795620

    申请日：2013-03-12

    申请人： Kabushiki Kaisha Toshiba

    发明人： Daisuke Saida ,  Minoru Amano ,  Naoharu Shimomura

    IPC分类号： G11C11/00 ,  G11C11/16

    CPC分类号： G11C11/1675 ,  G11C11/161

    摘要： According to one embodiment, a nonvolatile memory device includes: a magnetic memory element and a control unit. The magnetic memory element includes a stacked body, and a first and a second stacked units. The first stacked unit includes a first and second ferromagnetic layers and a first nonmagnetic layer provided between the first and the second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer and a nonmagnetic tunneling barrier layer stacked with the third ferromagnetic layer. The control unit is configured to implement a first operation of setting the magnetic memory element to be in a first state. The first operation includes a first preliminary operation of applying a first pulse voltage; and a first setting operation of applying a second pulse voltage having a second rising time to the magnetic memory element after the first preliminary operation.

    摘要翻译： 根据一个实施例，非易失性存储器件包括：磁存储元件和控制单元。 磁存储元件包括层叠体，以及第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。 第二堆叠单元包括与第三铁磁层堆叠的第三铁磁层和非磁性隧道势垒层。 控制单元被配置为实现将磁存储元件设置为处于第一状态的第一操作。 第一操作包括施加第一脉冲电压的第一初步操作; 以及在第一初步操作之后将具有第二上升时间的第二脉冲电压施加到磁存储元件的第一设置操作。

    MAGNETIC MEMORY
    2.
    发明申请
    MAGNETIC MEMORY 有权
    磁记忆

    公开(公告)号：US20130250665A1

    公开(公告)日：2013-09-26

    申请号：US13621969

    申请日：2012-09-18

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Eiji KITAGAWA ,  Daisuke Saida ,  Naoharu Shimomura

    IPC分类号： G11C11/16

    CPC分类号： H01L43/08 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L27/228

    摘要： According to one embodiment, a magnetic memory includes a magnetoresistive element. The element includes a first magnetic film having a variable magnetization perpendicular to a film surface, a second magnetic film having an invariable magnetization perpendicular to the film surface, a nonmagnetic film between the first and second magnetic films, a magnetic field application layer including a third magnetic film having a magnetization parallel to the film surface. The third magnetic film applies a magnetic field parallel to the film surface to the first magnetic film. A magnitude of the magnetization of the third magnetic film when supplying a read current is larger than a magnitude of the magnetization of the third magnetic film when supplying a write current.

    摘要翻译： 根据一个实施例，磁存储器包括磁阻元件。 该元件包括具有垂直于膜表面的可变磁化强度的第一磁性膜，具有垂直于膜表面的不变磁化的第二磁性膜，第一和第二磁性膜之间的非磁性膜，包括第三磁性膜的磁场施加层 具有与膜表面平行的磁化的磁性膜。 第三磁性膜将与膜表面平行的磁场施加到第一磁性膜。 当提供读取电流时，第三磁性膜的磁化强度大于当提供写入电流时第三磁性膜的磁化强度的大小。

    Memory device
    3.
    发明授权
    Memory device 有权

    公开(公告)号：US09882122B2

    公开(公告)日：2018-01-30

    申请号：US15249837

    申请日：2016-08-29

    申请人： Kabushiki Kaisha Toshiba

    发明人： Daisuke Saida ,  Naoharu Shimomura

    IPC分类号： G11C11/00 ,  H01L43/08 ,  G11C11/16

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    摘要： According to one embodiment, a memory device includes a stacked structure and a controller. The stacked structure includes a first magnetic layer, a second magnetic layer stacked with the first magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second magnetic layer includes a first portion and a second portion stacked with the first portion. A magnetic resonance frequency of the first portion is different from a magnetic resonance frequency of the second portion. The controller is electrically connected to the stacked structure and causes a pulse current to flow in the stacked body in a first period. A length of the first period is not less than 0.9 times and not more than 1.1 times the absolute value of an odd number times of the reciprocal of a magnetic resonance frequency of the second magnetic layer.

    Magnetoresistive element and magnetic memory
    5.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US09299918B2

    公开(公告)日：2016-03-29

    申请号：US14504140

    申请日：2014-10-01

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Tadaomi Daibou ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

    IPC分类号： H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01F10/32

    CPC分类号： H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

    摘要翻译： 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

    Magnetic memory
    6.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US09230628B2

    公开(公告)日：2016-01-05

    申请号：US14198982

    申请日：2014-03-06

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Naoharu Shimomura ,  Eiji Kitagawa ,  Minoru Amano ,  Daisuke Saida ,  Kay Yakushiji ,  Takayuki Nozaki ,  Shinji Yuasa ,  Akio Fukushima ,  Hiroshi Imamura ,  Hitoshi Kubota

    IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G11C11/155 ,  H01F10/32 ,  H01F10/12

    CPC分类号： G11C11/161 ,  G11C11/155 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

    摘要： A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.

    摘要翻译： 根据实施例的磁存储器包括至少一个MTJ元件，MTJ元件包括：磁性多层结构，其包括其中固定有磁化方向的第一磁性层，磁化方向可变的第二磁性层， 以及位于所述第一和第二磁性层之间的隧道势垒层; 设置在所述磁性多层结构的第一表面上的第一电极; 设置在所述磁性多层结构的第二表面上的第二电极; 设置在所述磁性多层结构的侧面的绝缘膜; 以及设置在所述磁性多层结构的侧表面上的绝缘膜位于它们之间的控制电极，在读取操作中将电压施加到所述控制电极，这增加了用于改变所述第二磁性层的磁化的能量势垒。

    Magnetic memory element and nonvolatile memory device
    7.
    发明授权
    Magnetic memory element and nonvolatile memory device 有权
    磁存储元件和非易失性存储器件

    公开(公告)号：US09025368B2

    公开(公告)日：2015-05-05

    申请号：US14184920

    申请日：2014-02-20

    申请人： Kabushiki Kaisha Toshiba

    发明人： Daisuke Saida ,  Minoru Amano ,  Hiroshi Imamura

    IPC分类号： G11C11/00 ,  H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22

    CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetic memory element includes a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer. The second ferromagnetic layer is stacked with the first ferromagnetic layer. The second ferromagnetic layer has a first and second portion. The first and second portion has a changeable direction of magnetization. The second portion is stacked with the first portion in a stacking direction of the first ferromagnetic layer and the second ferromagnetic layer. A magnetic resonance frequency of the second portion is lower than a magnetic resonance frequency of the first portion. The first nonmagnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The second stacked unit is stacked with the first stacked unit in the stacking direction. The second stacked unit includes a third ferromagnetic layer.

    摘要翻译： 磁存储元件包括第一堆叠单元和第二堆叠单元。 第一堆叠单元包括第一铁磁层，第二铁磁层和第一非磁性层。 第二铁磁层与第一铁磁层层叠。 第二铁磁层具有第一和第二部分。 第一和第二部分具有可变的磁化方向。 第二部分在第一铁磁层和第二铁磁层的层叠方向上与第一部分堆叠。 第二部分的磁共振频率低于第一部分的磁共振频率。 第一非磁性层设置在第一铁磁层和第二铁磁层之间。 第二堆叠单元与第一堆叠单元堆叠在堆叠方向上。 第二堆叠单元包括第三铁磁层。

    Magnetic memory
    8.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US08937832B2

    公开(公告)日：2015-01-20

    申请号：US13621969

    申请日：2012-09-18

    申请人： Kabushiki Kaisha Toshiba

    发明人： Eiji Kitagawa ,  Daisuke Saida ,  Naoharu Shimomura

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L27/228

    摘要： According to one embodiment, a magnetic memory includes a magnetoresistive element. The element includes a first magnetic film having a variable magnetization perpendicular to a film surface, a second magnetic film having an invariable magnetization perpendicular to the film surface, a nonmagnetic film between the first and second magnetic films, a magnetic field application layer including a third magnetic film having a magnetization parallel to the film surface. The third magnetic film applies a magnetic field parallel to the film surface to the first magnetic film. A magnitude of the magnetization of the third magnetic film when supplying a read current is larger than a magnitude of the magnetization of the third magnetic film when supplying a write current.

    摘要翻译： 根据一个实施例，磁存储器包括磁阻元件。 该元件包括具有垂直于膜表面的可变磁化强度的第一磁性膜，具有垂直于膜表面的不变磁化的第二磁性膜，第一和第二磁性膜之间的非磁性膜，包括第三磁性膜的磁场施加层 具有与膜表面平行的磁化的磁性膜。 第三磁性膜将与膜表面平行的磁场施加到第一磁性膜。 当提供读取电流时，第三磁性膜的磁化强度大于当提供写入电流时第三磁性膜的磁化强度的大小。