- 专利标题： Memory system including non-volatile memory of which access speed is electrically controlled
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申请号： US15067723申请日： 2016-03-11
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公开(公告)号： US09959919B2公开(公告)日： 2018-05-01
- 发明人: Daisuke Saida , Susumu Takeda , Hiroki Noguchi , Kazuhiko Abe
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2015-058745 20150320
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C7/12 ; G11C11/16 ; G11C29/02 ; G11C11/18 ; G06F12/0811
摘要：
A memory system has a non-volatile memory of which access speed is electrically controlled, a control circuitry that selects a first region which is a portion of a memory region of the non-volatile memory, and a boost circuit that adjusts an access speed of the first region to be higher than an access speed of a second region different from the first region in the memory region.
公开/授权文献
- US20160276008A1 MEMORY SYSTEM 公开/授权日：2016-09-22
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