公开(公告)号：US20150255710A1

公开(公告)日：2015-09-10

申请号：US14562790

申请日：2014-12-08

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shiho NAKAMURA ,  Yasuaki OOTERA ,  Takuya SHIMADA

IPC: H01L43/08 ,  G11C11/16 ,  H01L43/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C2213/71 ,  H01L43/02

Abstract: A magnetic memory includes a magnetic thin line including a plurality of magnetic domains, a reference layer having a magnetization, a nonmagnetic layer, a first fixed magnetization part having a magnetization, a second fixed magnetization part having a magnetization, a first electrode, a second electrode, and a third electrode.

Abstract translation: 磁存储器包括包括多个磁畴的磁性细线，具有磁化的参考层，非磁性层，具有磁化的第一固定磁化部分，具有磁化的第二固定磁化部分，第一电极，第二电极 电极和第三电极。

公开(公告)号：US20170069829A1

公开(公告)日：2017-03-09

申请号：US15248472

申请日：2016-08-26

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hirofumi MORISE ,  Tsuyoshi KONDO ,  Yasuaki OOTERA ,  Takuya SHIMADA ,  Michael Amaud QUINSAT ,  Shiho NAKAMURA

IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/067 ,  G11C11/155 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a nonmagnetic unit, and a controller. The second magnetic unit includes a first portion and a second portion. The first portion includes a first region and a second region. The controller performs a first operation and a second operation. In the first operation, the controller changes a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction. The first current has a first current value. In the second operation, the controller changes a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction. The second current has a second current value. The second current value is less than the first current value.

Abstract translation: 根据一个实施例，磁存储元件包括第一磁单元，第二磁单元，非磁单元和控制器。 第二磁性单元包括第一部分和第二部分。 第一部分包括第一区域和第二区域。 控制器执行第一操作和第二操作。 在第一操作中，控制器通过使第一电流在第一电流方向上流过第一部分来改变第一区域的磁化方向。 第一个电流具有第一个电流值。 在第二操作中，控制器通过使第二电流在第二电流方向上流过第一部分来改变第二区域的磁化方向。 第二电流具有第二电流值。 第二个当前值小于第一个当前值。

公开(公告)号：US20160087631A1

公开(公告)日：2016-03-24

申请号：US14861199

申请日：2015-09-22

Applicant: Kabushiki Kaisha Toshiba

Inventor： Tsuyoshi KONDO ,  Hirofumi MORISE ,  Shiho NAKAMURA

IPC: H03K19/00 ,  H03K19/20 ,  G11C11/16 ,  H03K19/18

CPC classification number: H03K19/0008 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1675 ,  G11C11/18 ,  H03K19/18 ,  H03K19/20

Abstract: One embodiment provides a magnetic logic device including: a first conductive thin wire; a second conductive thin wire; and a third conductive thin wire that electrically connects the first conductive thin wire and the second conductive thin wire. The first to third conductive thin wires commonly includes: a first non-magnetic metal layer; a second non-magnetic metal layer; and a magnetic metal layer sandwiched between the first non-magnetic metal layer and the second non-magnetic metal layer.

Abstract translation: 一个实施例提供一种磁逻辑器件，包括：第一导电细线; 第二导电细线; 以及电连接第一导电细线和第二导电细线的第三导电细线。 第一至第三导电细线通常包括：第一非磁性金属层; 第二非磁性金属层; 以及夹在第一非磁性金属层和第二非磁性金属层之间的磁性金属层。

公开(公告)号：US20150262702A1

公开(公告)日：2015-09-17

申请号：US14593334

申请日：2015-01-09

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yasuaki OOTERA ,  Takuya SHIMADA ,  Shiho NAKAMURA

IPC: G11C19/02

CPC classification number: G11C19/02 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841

Abstract: A magnetic memory according to an embodiment includes: a plurality of groups of magnetic nanowires extending in a direction, each group of magnetic nanowires including at least one magnetic nanowire, each magnetic nanowire having a first terminal and a second terminal; a plurality of recording and reproducing elements corresponding to the groups of magnetic nanowires, each recording and reproducing element writing data to and reading data from magnetic nanowires of a corresponding group of magnetic nanowires, and connecting to the first terminals of the magnetic nanowires of the corresponding group of magnetic nanowires; and an electrode to which the second terminals of the magnetic nanowires of the groups of magnetic nanowires are connected.

Abstract translation: 根据实施例的磁存储器包括：沿一个方向延伸的多组磁性纳米线组，每组磁性纳米线包括至少一个磁性纳米线，每个磁性纳米线具有第一端子和第二端子; 对应于磁纳米线组的多个记录和再现元件，每个记录和再现元件将数据写入并从相应的磁纳米线组的磁纳米线读取数据，并连接到相应的磁纳米线的第一端子 一组磁性纳米线; 以及连接有磁性纳米线组的磁性纳米线的第二端子的电极。

公开(公告)号：US20130242647A1

公开(公告)日：2013-09-19

申请号：US13761637

申请日：2013-02-07

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shiho NAKAMURA ,  Hirofumi MORISE ,  Tsuyoshi KONDO

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C5/147 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841

Abstract: A magnetic memory according to an embodiment includes: a magnetic layer including a plurality of magnetic domains and a plurality of domain walls, and extending in a direction; a pinning layer formed with nonmagnetic phases and magnetic phases, extending in an extending direction of the magnetic layer and being located adjacent to the magnetic layer; an electrode layer located on the opposite side of the pinning layer from the magnetic layer; an insulating layer located between the pinning layer and the electrode layer; a current introducing unit flowing a shift current to the magnetic layer, the shift current causing the domain walls to shift; a write unit writing information into the magnetic layer; a read unit reading information from the magnetic layer; and a voltage generating unit generating a voltage to be applied between the pinning layer and the electrode layer.

公开(公告)号：US20160056205A1

公开(公告)日：2016-02-25

申请号：US14829080

申请日：2015-08-18

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shiho NAKAMURA ,  Yuuzo KAMIGUCHI ,  Yasuaki OOTERA ,  Tsuyoshi KONDO

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory including a first magnetic unit, a first nonmagnetic unit, a first fixed magnetic unit, a second fixed magnetic unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first nonmagnetic unit contacts one end of the first magnetic unit. The first fixed magnetic unit is separated from the first magnetic unit. The first fixed magnetic unit contacts the first nonmagnetic unit. The second fixed magnetic unit is separated from the first magnetic unit and the first fixed magnetic unit. The second fixed magnetic unit is in contact with the first nonmagnetic unit. The second fixed magnetic unit is magnetized in a direction different from a magnetization direction of the first fixed magnetic unit.

Abstract translation: 根据一个实施例，一种包括第一磁单元，第一非磁单元，第一固定磁单元，第二固定磁单元，第一电极，第二电极和第三电极的磁存储器。 第一磁性单元沿第一方向延伸。 第一磁性单元包括沿第一方向布置的多个磁畴。 第一非磁性单元接触第一磁性单元的一端。 第一固定磁单元与第一磁单元分离。 第一固定磁单元接触第一非磁性单元。 第二固定磁性单元与第一磁性单元和第一固定磁性单元分离。 第二固定磁性单元与第一非磁性单元接触。 第二固定磁单元在与第一固定磁单元的磁化方向不同的方向上被磁化。

公开(公告)号：US20150078071A1

公开(公告)日：2015-03-19

申请号：US14478742

申请日：2014-09-05

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shiho NAKAMURA

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C5/063 ,  G11C11/161 ,  G11C11/1673 ,  G11C19/0808 ,  G11C19/0841

Abstract: A magnetic domain wall motion memory according to an embodiment includes: a magnetic memory nanowire; a write magnetic wire intersecting with the magnetic memory nanowire; an intermediate joining portion provided in an intersection region between the write magnetic wire and the magnetic memory nanowire; adjacent pinning portions placed on one of the same side and the opposite side of the write magnetic wire as and from the magnetic memory nanowire; a read unit attached to the magnetic memory nanowire; a pair of first electrodes that applies a write current to the write magnetic wire; and a pair of second electrodes that applies a current for causing the magnetic memory nanowire to move a magnetic domain wall, wherein contact faces of the write magnetic wire in contact with the adjacent pinning portions have magnetization configurations antiparallel to each other.

Abstract translation: 根据实施例的磁畴壁运动存储器包括：磁存储器纳米线; 与磁记忆纳米线相交的写磁线; 设置在写磁线和磁存储器纳米线之间的交叉区域中的中间接合部分; 相邻的钉扎部分放置在与磁存储器纳米线相同的写入磁线的相同侧和相对侧上; 附着在磁记忆体纳米线上的读取单元; 一对向写入磁线施加写入电流的第一电极; 以及一对施加用于使磁存储器纳米线移动磁畴壁的电流的第二电极，其中与相邻的钉扎部分接触的写入磁线的接触面具有彼此反平行的磁化构造。

公开(公告)号：US20170263329A1

公开(公告)日：2017-09-14

申请号：US15252936

申请日：2016-08-31

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Michael Arnaud QUINSAT ,  Tsuyoshi KONDO ,  Hirofumi MORISE ,  Takuya SHIMADA ,  Yasuaki OOTERA ,  Masaki KADO ,  Shiho NAKAMURA

IPC: G11C19/08

CPC classification number: G11C19/0833 ,  G11C19/0841

Abstract: According to the embodiment, a magnetic memory device includes a magnetic body. The magnetic body includes first and second extending regions, and a first connecting region. The first extending region spreads along a first direction and along a second direction crossing the first direction, and includes first and second end portions extending in the first direction. The second end portion is separated from the first end portion in the second direction. The second extending region spreads along the first direction and along a third direction crossing the first direction, and includes third and fourth end portions extending in the first direction. The fourth end portion is separated from the third end portion in the third direction. The first connecting region is provided between the first and third end portions, and connects the first end portion with the third end portion.

公开(公告)号：US20150380638A1

公开(公告)日：2015-12-31

申请号：US14704359

申请日：2015-05-05

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yasuaki OOTERA ,  Takuya SHIMADA ,  Tsuyoshi KONDO ,  Hirofumi MORISE ,  Michael Arnaud QUINSAT ,  Shiho NAKAMURA

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02

CPC classification number: G11C19/0841 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808

Abstract: According to one embodiment, a magnetic memory includes a first magnetic unit, a first magnetic layer, a first recording/reproducing element, a first electrode, and a second electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first magnetic unit has a columnar configuration having a hollow portion. The first magnetic layer is connected to a first end portion of the first magnetic unit, the first magnetic layer extends in a direction intersecting the first direction. The first recording/reproducing element is provided in contact with the first magnetic layer. The first electrode is electrically connected to the first magnetic layer. The second electrode is connected to a second end portion of the first magnetic unit on a side opposite to the first end portion.

Abstract translation: 根据一个实施例，磁存储器包括第一磁性单元，第一磁性层，第一记录/再现元件，第一电极和第二电极。 第一磁性单元沿第一方向延伸。 第一磁性单元包括沿第一方向布置的多个磁畴。 第一磁性单元具有中空部分的柱状结构。 第一磁性层连接到第一磁性单元的第一端部，第一磁性层沿与第一方向相交的方向延伸。 第一记录/再现元件设置成与第一磁性层接触。 第一电极电连接到第一磁性层。 第二电极在与第一端部相对的一侧连接到第一磁性单元的第二端部。

公开(公告)号：US20140140126A1

公开(公告)日：2014-05-22

申请号：US14081149

申请日：2013-11-15

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hirofumi MORISE ,  Yoshiaki FUKUZUMI ,  Tsuyoshi KONDO ,  Shiho NAKAMURA ,  Hideaki AOCHI

IPC: G11C19/02

CPC classification number: G11C19/02 ,  G11C19/08 ,  H01L27/22 ,  H01L43/08

Abstract: A magnetic storage element includes a magnetic nanowire. A cross-section of the magnetic nanowire has first and second visible outlines, the first visible outline has a first minimal point at which a distance from a virtual straight line becomes minimal, a second minimal point at which the distance from the virtual straight line becomes minimal, and a first maximal point at which the distance from the virtual straight line becomes longest between the first minimal point and the second minimal point, and an angle between a first straight line connecting the first minimal point and the second minimal point, and one of a second straight line connecting the first minimal point and the first maximal point and a third straight line connecting the second minimal point and the first maximal point is not smaller than four degrees and not larger than 30 degrees.

Abstract translation: 磁存储元件包括磁性纳米线。 磁纳米线的横截面具有第一和第二可视轮廓，第一可见轮廓具有从虚拟直线的距离变得最小的第一最小点，距离虚拟直线的距离变成第二最小点 最小和第一最大点，在该第一最大点处，从虚拟直线到第一最小点和第二最小点之间的距离变得最长，以及连接第一最小点和第二最小点的第一直线之间的角度，以及一个 连接第一最小点和第一最大点的第二直线和连接第二最小点和第一最大点的第三直线不小于四度且不大于30度。