公开(公告)号：US20150096605A1

公开(公告)日：2015-04-09

申请号：US14446964

申请日：2014-07-30

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiromi YUASA ,  Masaki KADO ,  Yuuzo KAMIGUCHI

IPC: H01L35/32

CPC classification number: H01L35/32 ,  H01L37/00

Abstract: A thermoelectric converting thin line includes a thin line extending in one direction, a first ferromagnetic layer formed on a side of the thin line having a magnetization fixed in a plane in a direction intersecting with a direction along which the thin line extends, and a first nonmagnetic metal layer formed on the first ferromagnetic layer.

Abstract translation: 热电转换细线包括在一个方向上延伸的细线，第一铁磁层形成在细线一侧，其磁化固定在沿与细线延伸的方向相交的方向上的平面中;以及第一 形成在第一铁磁层上的非磁性金属层。

公开(公告)号：US20140211338A1

公开(公告)日：2014-07-31

申请号：US14165023

申请日：2014-01-27

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hitoshi IWASAKI ,  Shuichi MURAKAMI ,  Masayuki TAKAGISHI ,  Susumu HASHIMOTO ,  Yousuke ISOWAKI ,  Naoki HASE ,  Masaki KADO

IPC: G11B5/31

CPC classification number: G11B5/3912

Abstract: A magnetic head according to an embodiment includes a first magnetic shield and a second magnetic shield that are opposed to each other, and a magnetoresistive film arranged between the first magnetic shield and the second magnetic shield, and including a first magnetic layer including a first metal layer that contains 90 at. % or more of Fe and a first Heusler alloy layer, a second magnetic layer arranged on a side of the first Heusler alloy layer opposite from the first magnetic layer, and an intermediate layer arranged between the first Heusler alloy layer and the second magnetic layer.

Abstract translation: 根据实施例的磁头包括彼此相对的第一磁屏蔽和第二磁屏蔽，以及布置在第一磁屏蔽和第二磁屏蔽之间的磁阻膜，并且包括第一磁性层，第一磁性层包括第一金属 包含90的层。 Fe和第一Heusler合金层的％以上，配置在与第一磁性层相反的第一Heusler合金层的一侧的第二磁性层，以及布置在第一Heusler合金层和第二磁性层之间的中间层。

公开(公告)号：US20150270469A1

公开(公告)日：2015-09-24

申请号：US14660096

申请日：2015-03-17

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiromi YUASA ,  Masaki KADO

IPC: H01L37/00

CPC classification number: H01L37/00

Abstract: A thermoelectric converting element includes a substrate, a nonmagnetic metal layer, and an insulated ferromagnetic layer provided between the substrate and the nonmagnetic metal layer and having a magnetization fixed in a plane in a direction and including a hard magnetic material.

Abstract translation: 热电转换元件包括衬底，非磁性金属层和设置在衬底和非磁性金属层之间并且具有固定在包括硬磁材料的方向的平面中的磁化的绝缘铁磁层。

公开(公告)号：US20140334041A1

公开(公告)日：2014-11-13

申请号：US14206175

申请日：2014-03-12

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoki HASE ,  Masayuki TAKAGISHI ,  Susumu HASHIMOTO ,  Shuichi MURAKAMI ,  Yousuke ISOWAKI ,  Masaki KADO ,  Hitoshi IWASAKI

IPC: G11B5/31

CPC classification number: G01R33/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B5/3967 ,  G11B2005/0024 ,  Y10T428/1121

Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first magnetic film; a second magnetic film; and an intermediate film of a nonmagnetic material disposed between the first magnetic film and the second magnetic film, at least one of the first magnetic film and the second magnetic film being formed of a material expressed as AxB1-x(65 at %≦x≦85 at %) where A is an alloy containing Co and at least one element selected from Fe and Mn, and B is an alloy containing Si or Ge, a Si concentration in the at least one of the first magnetic film and the second magnetic film decreasing and a Ge concentration increasing as a distance from the intermediate film increases.

Abstract translation: 根据实施例的磁阻元件包括：磁阻效应膜，包括：第一磁膜; 第二磁性膜; 以及设置在所述第一磁性膜和所述第二磁性膜之间的非磁性材料的中间膜，所述第一磁性膜和所述第二磁性膜中的至少一个由表示为AxB1-x（65at％＆nlE; x＆amp; ; 85原子％）其中A是含有Co和至少一种选自Fe和Mn的元素的合金，B是含有Si或Ge的合金，第一磁性膜和第二磁性体中的至少一种中的Si浓度 随着距离中间膜的距离增加，Ge浓度增加。

公开(公告)号：US20170263329A1

公开(公告)日：2017-09-14

申请号：US15252936

申请日：2016-08-31

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Michael Arnaud QUINSAT ,  Tsuyoshi KONDO ,  Hirofumi MORISE ,  Takuya SHIMADA ,  Yasuaki OOTERA ,  Masaki KADO ,  Shiho NAKAMURA

IPC: G11C19/08

CPC classification number: G11C19/0833 ,  G11C19/0841

Abstract: According to the embodiment, a magnetic memory device includes a magnetic body. The magnetic body includes first and second extending regions, and a first connecting region. The first extending region spreads along a first direction and along a second direction crossing the first direction, and includes first and second end portions extending in the first direction. The second end portion is separated from the first end portion in the second direction. The second extending region spreads along the first direction and along a third direction crossing the first direction, and includes third and fourth end portions extending in the first direction. The fourth end portion is separated from the third end portion in the third direction. The first connecting region is provided between the first and third end portions, and connects the first end portion with the third end portion.

公开(公告)号：US20170229640A1

公开(公告)日：2017-08-10

申请号：US15267418

申请日：2016-09-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Masaki KADO ,  Tsuyoshi KONDO ,  Hirofumi MORISE ,  Yasuaki OOTERA ,  Takuya SHIMADA ,  Michael Arnaud Quinsat ,  Shiho NAKAMURA

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08

CPC classification number: G11C11/1675 ,  G11C19/0841

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic body and a second magnetic body. The first magnetic body extends in a first direction. The second magnetic body extends in the first direction. A distance between the second magnetic body and the first magnetic body changes periodically along the first direction.

公开(公告)号：US20160072038A1

公开(公告)日：2016-03-10

申请号：US14842449

申请日：2015-09-01

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiromi YUASA ,  Masaki KADO

IPC: H01L37/00

CPC classification number: H01L37/00

Abstract: A thermoelectric conversion element comprises: a substrate; an insulating ferromagnetic layer provided on the substrate and having a magnetization fixed in one direction; and a nonmagnetic metal layer provided on the ferromagnetic layer. The substrate is configured from an organic type material whose thermal conductivity is not less than 0.15 W/Km and not more than 1.5 W/Km, whose Young's modulus is not less than 0.2 Gpa and not more than 7 Gpa, and whose film thickness is 100 μm or less.

Abstract translation: 热电转换元件包括：基板; 设置在基板上并具有沿一个方向固定的磁化的绝缘铁磁层; 以及设置在铁磁层上的非磁性金属层。 基板由热导率不低于0.15W / Km且不大于1.5W / Km的有机型材料构成，其杨氏模量不小于0.2Gpa且不大于7Gpa，膜厚度为 100μm以下。

公开(公告)号：US20150263258A1

公开(公告)日：2015-09-17

申请号：US14602713

申请日：2015-01-22

Applicant: Kabushiki Kaisha Toshiba

Inventor： Masaki KADO ,  Yuuzo KAMIGUCHI ,  Hiromi YUASA

IPC: H01L37/00

CPC classification number: H01L37/00

Abstract: A thermoelectric conversion element comprises a substrate, an insulating ferromagnetic layer, and a nonmagnetic metal layer. The insulating ferromagnetic layer is formed upwardly on the substrate and has a magnetization fixed in a certain direction. At least one trench is formed on a surface of this insulating ferromagnetic layer so as to extend in a direction along the surface of the insulating ferromagnetic layer. The nonmagnetic metal layer is formed conforming to a shape of the trench, upwardly on the insulating ferromagnetic layer including on a wall surface of the trench.

Abstract translation: 热电转换元件包括衬底，绝缘铁磁层和非磁性金属层。 绝缘铁磁层在衬底上向上形成并且具有沿某一方向固定的磁化强度。 在该绝缘铁磁层的表面上形成至少一个沟槽，以沿着绝缘铁磁层的表面的方向延伸。 非磁性金属层形成为符合沟槽的形状，在包括沟槽的壁表面的绝缘铁磁层上向上。

公开(公告)号：US20140334029A1

公开(公告)日：2014-11-13

申请号：US14193172

申请日：2014-02-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoki HASE ,  Masayuki TAKAGISHI ,  Susumu HASHIMOTO ,  Shuichi MURAKAMI ,  Yousuke ISOWAKI ,  Masaki KADO ,  Hitoshi IWASAKI

IPC: G11B5/31

CPC classification number: G01R33/093 ,  G11B5/3906 ,  G11B5/3912 ,  G11B5/398 ,  H01F10/1936 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/02 ,  H01L43/08 ,  Y10T428/1121

Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first and second magnetic films; and an intermediate film disposed between the first and second magnetic films, at least one of the first and second magnetic films being formed of a Heusler alloy expressed as Co100-x(AyB1.0-y)x (40 at %≦x≦60 at %, 0.3≦y≦0.7) where A is an alloy containing at least Fe and Mn, and B is an alloy containing at least Si, Al, and Ge, a composition of the at least one of the first and second magnetic films being changed in a film-thickness direction so that a ratio of Fe/(Fe+Mn) is less than 60% in a first region disposed near an interface with the intermediate film in the film-thickness direction, and is 60% or more in a second region that is disposed at more distance from the interface than the first region in the film-thickness direction.

Abstract translation: 根据实施例的磁阻元件包括：磁阻效应膜，包括：第一和第二磁性膜; 以及设置在所述第一和第二磁性膜之间的中间膜，所述第一和第二磁性膜中的至少一个由表示为Co100-x（AyB1.0-y）x（40at％＆nlE; x＆amp; 60at％，0.3＆nlE; y＆nlE; 0.7）其中A是至少含有Fe和Mn的合金，B是至少含有Si，Al和Ge的合金，第一和第二 磁性膜在膜厚度方向上变化，使得在设置在与中间膜在膜厚度方向上的界面附近的第一区域中Fe /（Fe + Mn）的比率小于60％，并且为60％ 或更多的第二区域，其设置在比膜厚度方向上比第一区域更接近界面的位置。