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1.发明申请公开(公告)号：US20140211338A1
公开(公告)日：2014-07-31
申请号：US14165023
申请日：2014-01-27
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Hitoshi IWASAKI , Shuichi MURAKAMI , Masayuki TAKAGISHI , Susumu HASHIMOTO , Yousuke ISOWAKI , Naoki HASE , Masaki KADO
IPC: G11B5/31
CPC classification number: G11B5/3912
Abstract: A magnetic head according to an embodiment includes a first magnetic shield and a second magnetic shield that are opposed to each other, and a magnetoresistive film arranged between the first magnetic shield and the second magnetic shield, and including a first magnetic layer including a first metal layer that contains 90 at. % or more of Fe and a first Heusler alloy layer, a second magnetic layer arranged on a side of the first Heusler alloy layer opposite from the first magnetic layer, and an intermediate layer arranged between the first Heusler alloy layer and the second magnetic layer.
Abstract translation: 根据实施例的磁头包括彼此相对的第一磁屏蔽和第二磁屏蔽，以及布置在第一磁屏蔽和第二磁屏蔽之间的磁阻膜，并且包括第一磁性层，第一磁性层包括第一金属 包含90的层。 Fe和第一Heusler合金层的％以上，配置在与第一磁性层相反的第一Heusler合金层的一侧的第二磁性层，以及布置在第一Heusler合金层和第二磁性层之间的中间层。
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2.发明申请公开(公告)号：US20140204487A1
公开(公告)日：2014-07-24
申请号：US14157879
申请日：2014-01-17
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Naoki HASE , Masayuki TAKAGISHI , Hitoshi IWASAKI
CPC classification number: H01L43/08 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3932 , G11B2005/0024
Abstract: According to one embodiment, a magnetoresistive effect element includes: a nonmagnetic layer; a stacked structure body; and a detection layer. The stacked structure body is provided on the nonmagnetic layer. The stacked structure body includes: a reference layer; an oscillation layer; and an intermediate layer. The reference layer is provided on the nonmagnetic layer. A magnetization of the reference layer is fixed. The oscillation layer is provided on the reference layer. A magnetization of the oscillation layer is substantially parallel to the magnetization of the reference layer and is variable. The intermediate layer is provided between the reference layer and the oscillation layer. The detection layer is provided on the nonmagnetic layer apart from the stacked structure body.
Abstract translation: 根据一个实施例，磁阻效应元件包括：非磁性层; 堆叠结构体; 和检测层。 层叠结构体设置在非磁性层上。 层叠结构体包括：参考层; 振荡层; 和中间层。 参考层设置在非磁性层上。 参考层的磁化是固定的。 振荡层设置在参考层上。 振荡层的磁化基本上平行于参考层的磁化，并且是可变的。 中间层设置在参考层和振荡层之间。 检测层设置在离层叠结构体的非磁性层上。
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公开(公告)号：US20160380184A1
公开(公告)日：2016-12-29
申请号：US15259408
申请日：2016-09-08
Applicant: Kabushiki Kaisha Toshiba
Inventor： Yushi KATO , Tadaomi DAIBOU , Yuichi OHSAWA , Shumpei OMINE , Naoki HASE
CPC classification number: H01L43/08 , H01L27/228 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.
Abstract translation: 根据实施例的磁阻元件包括：第一磁性层; 第二磁性层; 设置在所述第一磁性层和所述第二磁性层之间的第一非磁性层; 设置在所述第一磁性层和所述第一非磁性层之间的第三磁性层; 以及具有非晶结构的层，所述层含有包含在所述第一磁性层中的两个或更多个元素，所述层设置在所述第一磁性层和所述第三磁性层之间。
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4.发明申请公开(公告)号：US20140233135A1
公开(公告)日：2014-08-21
申请号：US14182540
申请日：2014-02-18
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Susumu HASHIMOTO , Masayuki TAKAGISHI , Shuichi MURAKAMI , Yousuke ISOWAKI , Naoki HASE , Hitoshi IWASAKI
IPC: G11B5/39
CPC classification number: G11B5/3912 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/398 , H01F10/325
Abstract: According to one embodiment, a magnetoresistance effect element includes first and second shields, a stacked body and a hard bias unit. The stacked body includes first and second magnetic layers, an intermediate layer and a first Ru layer. A magnetization of the first magnetic layer is changeable. A magnetization of the second magnetic layer is changeable. The intermediate layer is nonmagnetic. The first Ru layer is provided between the first shield and the first magnetic layer. A thickness of the first Ru layer is not less than 1.5 nanometers and not more than 2.5 nanometers. The hard bias unit is provided between the first shield and the second shield. A first direction from the first shield toward the second shield intersects a second direction from the stacked body toward the hard bias unit.
Abstract translation: 根据一个实施例，磁阻效应元件包括第一和第二屏蔽层，堆叠体和硬偏置单元。 层叠体包括第一和第二磁性层，中间层和第一Ru层。 第一磁性层的磁化是可变化的。 第二磁性层的磁化是可变化的。 中间层是非磁性的。 第一Ru层设置在第一屏蔽和第一磁性层之间。 第一Ru层的厚度不小于1.5纳米且不大于2.5纳米。 硬偏置单元设置在第一屏蔽和第二屏蔽之间。 从第一屏蔽朝向第二屏蔽的第一方向与从层叠体朝向硬偏压单元的第二方向相交。
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5.发明申请公开(公告)号：US20140334029A1
公开(公告)日：2014-11-13
申请号：US14193172
申请日：2014-02-28
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Naoki HASE , Masayuki TAKAGISHI , Susumu HASHIMOTO , Shuichi MURAKAMI , Yousuke ISOWAKI , Masaki KADO , Hitoshi IWASAKI
IPC: G11B5/31
CPC classification number: G01R33/093 , G11B5/3906 , G11B5/3912 , G11B5/398 , H01F10/1936 , H01F10/3268 , H01F10/3295 , H01L43/02 , H01L43/08 , Y10T428/1121
Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first and second magnetic films; and an intermediate film disposed between the first and second magnetic films, at least one of the first and second magnetic films being formed of a Heusler alloy expressed as Co100-x(AyB1.0-y)x (40 at %≦x≦60 at %, 0.3≦y≦0.7) where A is an alloy containing at least Fe and Mn, and B is an alloy containing at least Si, Al, and Ge, a composition of the at least one of the first and second magnetic films being changed in a film-thickness direction so that a ratio of Fe/(Fe+Mn) is less than 60% in a first region disposed near an interface with the intermediate film in the film-thickness direction, and is 60% or more in a second region that is disposed at more distance from the interface than the first region in the film-thickness direction.
Abstract translation: 根据实施例的磁阻元件包括：磁阻效应膜，包括：第一和第二磁性膜; 以及设置在所述第一和第二磁性膜之间的中间膜，所述第一和第二磁性膜中的至少一个由表示为Co100-x（AyB1.0-y）x（40at％＆nlE; x＆amp; 60at％，0.3＆nlE; y＆nlE; 0.7）其中A是至少含有Fe和Mn的合金，B是至少含有Si，Al和Ge的合金，第一和第二 磁性膜在膜厚度方向上变化，使得在设置在与中间膜在膜厚度方向上的界面附近的第一区域中Fe /（Fe + Mn）的比率小于60％，并且为60％ 或更多的第二区域，其设置在比膜厚度方向上比第一区域更接近界面的位置。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20140160598A1
公开(公告)日：2014-06-12
申请号：US13915529
申请日：2013-06-11
Applicant: Kabushiki Kaisha Toshiba
Inventor： Masahiro TAKASHITA , Shuichi MURAKAMI , Naoki HASE , Katsuhiko KOUI
IPC: G11B5/147
CPC classification number: G11B5/147 , G11B5/235 , G11B5/3136 , G11B5/3146 , G11B2005/0024
Abstract: A magnetic head includes a main magnetic pole, a trailing shield that forms a magnetic circuit with the main magnetic pole, a spin torque oscillator that is provided between the main magnetic pole and the trailing shield, a first cooling layer that partially has a Heusler structure, and a second cooling layer that is provided on the first cooling layer and mainly comprised of silver. The first cooling layer and the second cooling layer are provided either between the main magnetic pole and spin torque oscillator or between the trailing shield and the spin torque oscillator, with either of the two cooling layers being disposed closer to the spin torque oscillator. A third cooling layer may be formed to be in contact with the first cooling layer.
Abstract translation: 磁头包括主磁极，与主磁极形成磁路的后屏蔽，设置在主磁极和后屏蔽之间的自旋扭矩振荡器，部分具有赫斯勒结构的第一冷却层 ，以及设置在第一冷却层上并主要由银构成的第二冷却层。 第一冷却层和第二冷却层设置在主磁极和自旋扭矩振荡器之间，或者设置在后挡板和自旋扭矩振荡器之间，两个冷却层中的任一个设置得更靠近自旋扭矩振荡器。 第三冷却层可以形成为与第一冷却层接触。
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公开(公告)号：US20170170389A1
公开(公告)日：2017-06-15
申请号：US15445608
申请日：2017-02-28
Applicant: Kabushiki Kaisha Toshiba
Inventor： Naoki HASE , Takao OCHIAI , Tadaomi DAIBOU , Yushi KATO , Shumpei OMINE , Junichi ITO
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08 , H01L43/10
Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
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公开(公告)号：US20160380186A1
公开(公告)日：2016-12-29
申请号：US15259855
申请日：2016-09-08
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Tadaomi DAIBOU , Yushi KATO , Shumpei OMINE , Naoki HASE , Junichi ITO
CPC classification number: H01L43/08 , G01R33/098 , G11B5/3909 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/02 , H01L43/10
Abstract: A magnetoresistive element according to an embodiment includes a stack structure, the stack structure including: a first magnetic layer containing Mn and at least one element of Ga, Ge, or Al; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one element of Mg, Ba, Ca, C, Sr, Sc, Y, Gd, Tb, Dy, Ce, Ho, Yb, Er, or B.
Abstract translation: 根据实施例的磁阻元件包括堆叠结构，所述堆叠结构包括：包含Mn和至少一种Ga，Ge或Al元素的第一磁性层; 第二磁性层; 设置在所述第一磁性层和所述第二磁性层之间的第一非磁性层; 设置在所述第一磁性层和所述第一非磁性层之间的第三磁性层; 以及设置在第一磁性层和第三磁性层之间的第二非磁性层，第二非磁性层含有Mg，Ba，Ca，C，Sr，Sc，Y，Gd，Tb，Dy，Ce，Ho中的至少一种元素 ，Yb，Er或B.
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公开(公告)号：US20160380029A1
公开(公告)日：2016-12-29
申请号：US15262117
申请日：2016-09-12
Applicant: Kabushiki Kaisha Toshiba
Inventor： Naoki HASE , Tadaomi Daibou , Yushi Kato , Shumpei Omine , Junichi Ito
CPC classification number: H01L27/228 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/126 , H01F10/3272 , H01F10/3286 , H01L27/105 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR1-xhRx)z(TM1-yZy)1-z (0
Abstract translation: 根据实施例的磁阻元件包括：第一磁性层; 第二磁性层; 以及设置在第一磁性层和第二磁性层之间的第一非磁性层，第二磁性层包含具有组成（1R1-xhRx）z（TM1-yZy）1-z（0
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10.发明申请公开(公告)号：US20140334041A1
公开(公告)日：2014-11-13
申请号：US14206175
申请日：2014-03-12
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Naoki HASE , Masayuki TAKAGISHI , Susumu HASHIMOTO , Shuichi MURAKAMI , Yousuke ISOWAKI , Masaki KADO , Hitoshi IWASAKI
IPC: G11B5/31
CPC classification number: G01R33/00 , G01R33/093 , G11B5/3912 , G11B5/3967 , G11B2005/0024 , Y10T428/1121
Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first magnetic film; a second magnetic film; and an intermediate film of a nonmagnetic material disposed between the first magnetic film and the second magnetic film, at least one of the first magnetic film and the second magnetic film being formed of a material expressed as AxB1-x(65 at %≦x≦85 at %) where A is an alloy containing Co and at least one element selected from Fe and Mn, and B is an alloy containing Si or Ge, a Si concentration in the at least one of the first magnetic film and the second magnetic film decreasing and a Ge concentration increasing as a distance from the intermediate film increases.
Abstract translation: 根据实施例的磁阻元件包括：磁阻效应膜，包括：第一磁膜; 第二磁性膜; 以及设置在所述第一磁性膜和所述第二磁性膜之间的非磁性材料的中间膜，所述第一磁性膜和所述第二磁性膜中的至少一个由表示为AxB1-x（65at％＆nlE; x＆amp; ; 85原子％）其中A是含有Co和至少一种选自Fe和Mn的元素的合金，B是含有Si或Ge的合金，第一磁性膜和第二磁性体中的至少一种中的Si浓度 随着距离中间膜的距离增加，Ge浓度增加。
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