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    MAGNETIC MEMORY DEVICE
    1.
    发明申请
    MAGNETIC MEMORY DEVICE 有权
    磁记忆装置

    公开(公告)号：US20160267960A1

    公开(公告)日：2016-09-15

    申请号：US14848258

    申请日：2015-09-08

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Akiyuki MURAYAMA ,  Eiji KITAGAWA ,  Masahiko NAKAYAMA ,  Minoru AMANO ,  Takao OCHIAI

    IPC: G11C11/16

    CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1695 ,  G11C2213/15

    Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a magnetoresistive effect element having first and second terminals, the first terminal being electrically connected to the first interconnect, a diode having first and second terminals, the first terminal being electrically connected to the first terminal of the magnetoresistive effect element, the second terminal being electrically connected to the second terminal of the magnetoresistive effect element, and a transistor having source and drain terminals, one of the source and drain terminals being electrically connected to the second terminal of the magnetoresistive effect element and the second terminal of the diode, the other of the source and drain terminals being electrically connected to the second interconnect.

    Abstract translation: 根据一个实施例，磁存储器件包括第一互连，第二互连，具有第一和第二端子的磁阻效应元件，第一端子电连接到第一互连件，具有第一和第二端子的二极管，第一端子 与磁阻效应元件的第一端子电连接，第二端子电连接到磁阻效应元件的第二端子，以及具有源极和漏极端子的晶体管，源极和漏极端子中的一个电连接到 磁阻效应元件的第二端子和二极管的第二端子，源极和漏极端子中的另一个电连接到第二互连件。

    MAGNETIC MEMORY DEVICE
    2.
    发明申请
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20170263679A1

    公开(公告)日：2017-09-14

    申请号：US15268535

    申请日：2016-09-16

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Jyunichi OZEKI ,  Masahiko NAKAYAMA ,  Hiroaki YODA ,  Eiji KITAGAWA ,  Takao OCHIAI ,  Minoru AMANO ,  Kenji NOMA

    IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02

    CPC classification number: H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein saturation magnetization of part of the first magnetic layer which is located close to the first main surface is higher than saturation magnetization of part of the first magnetic layer which is located close to the second main surface.

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