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    MAGNETIC MEMORY DEVICE
    1.
    发明申请
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20200058338A1

    公开(公告)日：2020-02-20

    申请号：US16272372

    申请日：2019-02-11

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Mizue ISHIKAWA ,  Yushi KATO ,  Soichi OIKAWA ,  Hiroaki YODA

    IPC分类号： G11C11/16 ,  H01L43/10 ,  H01L43/08

    摘要： According to one embodiment, a magnetic memory device includes a conductive member, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive member includes a first layer. The first layer includes at least one selected from the group consisting of HfN having a NaCl structure, HfN having a fcc structure, and HfC having a NaCl structure. The first magnetic layer is separated from the first layer in a first direction. The second magnetic layer is provided between the first layer and the first magnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer.

    MAGNETIC MEMORY DEVICE
    2.
    发明申请
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20190280189A1

    公开(公告)日：2019-09-12

    申请号：US16423805

    申请日：2019-05-28

    申请人： Kabushiki Kaisha Toshiba

    发明人： Altansargai BUYANDALAI ,  Satoshi SHIROTORI ,  Yuichi OHSAWA ,  Hideyuki SUGIYAMA ,  Mariko SHIMIZU ,  Hiroaki YODA ,  Tomoaki INOKUCHI

    IPC分类号： H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08

    摘要： According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.

    MAGNETIC MEMORY DEVICE
    5.
    发明申请
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20170263679A1

    公开(公告)日：2017-09-14

    申请号：US15268535

    申请日：2016-09-16

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Jyunichi OZEKI ,  Masahiko NAKAYAMA ,  Hiroaki YODA ,  Eiji KITAGAWA ,  Takao OCHIAI ,  Minoru AMANO ,  Kenji NOMA

    IPC分类号： H01L27/22 ,  H01L43/10 ,  H01L43/02

    CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein saturation magnetization of part of the first magnetic layer which is located close to the first main surface is higher than saturation magnetization of part of the first magnetic layer which is located close to the second main surface.

    MAGNETIC MEMORY
    6.
    发明申请
    MAGNETIC MEMORY 审中-公开
    磁记忆

    公开(公告)号：US20170077177A1

    公开(公告)日：2017-03-16

    申请号：US15264111

    申请日：2016-09-13

    申请人： Kabushiki Kaisha Toshiba

    发明人： Naoharu SHIMOMURA ,  Hiroaki YODA ,  Tadaomi DAIBOU ,  Yuuzo KAMIGUCHI ,  Yuichi OHSAWA ,  Tomoaki INOKUCHI ,  Satoshi SHIROTORI

    IPC分类号： H01L27/22 ,  H01L43/02 ,  G11C11/16

    CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/11582 ,  H01L28/00 ,  H01L43/02

    摘要： A magnetic memory of an embodiment includes: a first nonmagnetic layer including a first and second faces; a first and second wirings disposed on a side of the first face; a third wiring disposed on a side of the second face; a first transistor, one of the source and the drain being connected to the first wiring, the other one being connected to the first nonmagnetic layer; a second transistor, one of source and drain being connected to the second wiring, the other one being connected to the first nonmagnetic layer; a magnetoresistive element disposed between the first nonmagnetic layer and the third wiring, a first terminal of the magnetoresistive element being connected to the first nonmagnetic layer; and a third transistor, one of source and drain of the third transistor being connected to the second terminal, the other one being connected to the third wiring.

    摘要翻译： 实施例的磁存储器包括：包括第一和第二面的第一非磁性层; 布置在所述第一面的一侧上的第一和第二布线; 设置在所述第二面的一侧的第三布线; 第一晶体管，源极和漏极中的一个连接到第一布线，另一个连接到第一非磁性层; 第二晶体管，源极和漏极之一连接到第二布线，另一个连接到第一非磁性层; 设置在第一非磁性层和第三布线之间的磁阻元件，磁阻元件的第一端子连接到第一非磁性层; 以及第三晶体管，第三晶体管的源极和漏极之一连接到第二端子，另一个连接到第三布线。

    MAGNETIC MEMORY
    7.
    发明申请
    MAGNETIC MEMORY 审中-公开
    磁记忆

    公开(公告)号：US20170076770A1

    公开(公告)日：2017-03-16

    申请号：US15263852

    申请日：2016-09-13

    申请人： Kabushiki Kaisha Toshiba

    发明人： Tadaomi DAIBOU ,  Naoharu SHIMOMURA ,  Yuuzo KAMIGUCHI ,  Hiroaki YODA ,  Yuichi OHSAWA ,  Tomoaki INOKUCHI ,  Satoshi SHIROTORI

    IPC分类号： G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

    CPC分类号： H01L27/228 ,  G11C5/06 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer disposed between the region and the first magnetic layer; and a nonmagnetic intermediate layer disposed between the first magnetic layer and the second magnetic layer; a transistor including a third terminal, a fourth terminal, and a control terminal, the third terminal being electrically connected to the first terminal; a first wiring electrically connected to the first magnetic layer and the fourth terminal; a second wiring electrically connected to the control terminal; and a third wiring electrically connected to the second terminal.

    摘要翻译： 根据实施例的磁存储器包括：导电非磁性层，包括第一端子，第二端子和第一端子和第二端子之间的区域; 磁阻元件，包括：第一磁性层; 设置在所述区域和所述第一磁性层之间的第二磁性层; 以及设置在所述第一磁性层和所述第二磁性层之间的非磁性中间层; 包括第三端子，第四端子和控制端子的晶体管，所述第三端子电连接到所述第一端子; 电连接到第一磁性层和第四端子的第一布线; 电连接到所述控制端子的第二布线; 以及电连接到第二端子的第三布线。

    MAGNETIC MEMORY DEVICE
    8.
    发明申请
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20200279596A1

    公开(公告)日：2020-09-03

    申请号：US16741246

    申请日：2020-01-13

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Tomoaki INOKUCHI ,  Katsuhiko KOUI ,  Naoharu SHIMOMURA ,  Hideyuki SUGIYAMA ,  Kazutaka IKEGAMI ,  Susumu TAKEDA ,  Satoshi TAKAYA ,  Shinobu FUJITA ,  Hiroaki YODA

    IPC分类号： G11C11/16 ,  H01L27/22 ,  H01L43/02

    摘要： According to one embodiment, a magnetic memory device includes a conductive member, a first element portion, and a controller. The conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first element portion includes a first element, a first interconnect, and a first circuit. The first element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The first counter magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first counter magnetic layer and the first magnetic layer. The first interconnect is electrically connected to the first magnetic layer. The first circuit is electrically connected to the first interconnect. The first circuit includes a first switch, a first capacitance element, a first parallel switch, and a first parallel capacitance element.