Invention Application
- Patent Title: MAGNETIC MEMORY DEVICE
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Application No.: US15449040Application Date: 2017-03-03
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Publication No.: US20180040357A1Publication Date: 2018-02-08
- Inventor: Satoshi SHIROTORI , Hiroaki YODA , Yuichi OHSAWA , Hideyuki SUGIYAMA , Mariko SHIMIZU , Altansargai BUYANDALAI , Naoharu SHIMOMURA
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Priority: JP2016-154040 20160804
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/10 ; H01L27/22 ; H01L43/08

Abstract:
According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.
Public/Granted literature
- US09966122B2 Magnetic memory device Public/Granted day:2018-05-08
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