Invention Application
- Patent Title: MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Patent Title (中): 磁性元件和磁记忆
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Application No.: US15010669Application Date: 2016-01-29
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Publication No.: US20160148975A1Publication Date: 2016-05-26
- Inventor: Yushi KATO , Tadaomi DAIBOU , Eiji KITAGAWA , Takao OCHIAI , Junichi ITO , Takahide KUBOTA , Shigemi MIZUKAMI , Terunobu MIYAZAKI
- Applicant: Kabushiki Kaisha Toshiba , National University Corporation Tohoku University
- Applicant Address: JP Minato-ku JP Sendai-shi
- Assignee: Kabushiki Kaisha Toshiba,National University Corporation Tohoku University
- Current Assignee: Kabushiki Kaisha Toshiba,National University Corporation Tohoku University
- Current Assignee Address: JP Minato-ku JP Sendai-shi
- Priority: JP2013-161823 20130802
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/08 ; H01L43/10 ; H01L43/02
Abstract:
A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer including (MnxGay)100-zCoz (45 atm %≦x≦75 atm %, 25 atm %≦y≦55 atm %, x+y=100 atm %, 0 atm %
Public/Granted literature
- US10269866B2 Magnetoresistive element and magnetic memory Public/Granted day:2019-04-23
Information query
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