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    MAGNETORESISTIVE EFFECT ELEMENT, MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT, AND MAGNETIC MEMORY
    1.
    发明申请
    MAGNETORESISTIVE EFFECT ELEMENT, MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT, AND MAGNETIC MEMORY 审中-公开
    电磁效应元件，磁阻效应元件的制造方法和磁记忆

    公开(公告)号：US20160197268A1

    公开(公告)日：2016-07-07

    申请号：US15068062

    申请日：2016-03-11

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Megumi YAKABE ,  Yuichi OHSAWA ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Junichi ITO ,  Eiji KITAGAWA

    IPC: H01L43/08 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

    Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including a first magnetic element; second magnetic layer; an intermediate layer between the first magnetic layer and the second magnetic layer; and a sidewall layer having a laminated structure on a side face of the first magnetic layer. The sidewall layer includes a first layer disposed on the side face of the first magnetic layer and including a first element having an atomic number larger than an atomic number of the first magnetic element, and a second layer including a second element having an atomic number smaller than the atomic number of the first atomic element. The first layer is disposed between the first magnetic layer and the second layer.

    Abstract translation: 根据一个实施例，磁阻效应元件包括包括第一磁性元件的第一磁性层; 第二磁性层; 第一磁性层和第二磁性层之间的中间层; 以及在第一磁性层的侧面上具有层叠结构的侧壁层。 侧壁层包括设置在第一磁性层的侧面上的第一层，并且包括具有比第一磁性元件的原子序数大的原子序数的第一元素，以及包含原子序数较小的第二元素的第二层 比第一个原子元素的原子序数。 第一层设置在第一磁性层和第二层之间。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    5.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20150014756A1

    公开(公告)日：2015-01-15

    申请号：US14504140

    申请日：2014-10-01

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Tadaomi DAIBOU ,  Minoru AMANO ,  Daisuke SAIDA ,  Junichi ITO ,  Yuichi OHSAWA ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Hiroaki YODA

    IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

    CPC classification number: H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

    Abstract translation: 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

    DEVICE MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF MAGNETIC DEVICE
    6.
    发明申请
    DEVICE MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF MAGNETIC DEVICE 有权
    磁性装置的装置制造装置和制造方法

    公开(公告)号：US20160196951A1

    公开(公告)日：2016-07-07

    申请号：US15067832

    申请日：2016-03-11

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Yuichi OHSAWA ,  Akio UI ,  Junichi ITO ,  Chikayoshi KAMATA ,  Megumi YAKABE ,  Saori KASHIWADA

    IPC: H01J37/08 ,  H01J37/30 ,  H01J37/09 ,  H01J37/20

    CPC classification number: H01J37/08 ,  H01J37/09 ,  H01J37/20 ,  H01J37/30 ,  H01J37/3053 ,  H01J2237/0822 ,  H01J2237/083 ,  H01J2237/3151 ,  H01L27/228 ,  H01L43/12

    Abstract: According to one embodiment, a device manufacturing apparatus includes a substrate holding portion holding a substrate; an ion source including a housing, an anode disposed in the housing, a cathode disposed outside the housing, and a first opening disposed in a portion of the housing such that the anode is exposed to a region between the anode and the substrate holding portion, the ion source configured to generate an ion beam with which the substrate is irradiated; and at least one first structure disposed between the ion source and the substrate holding portion, and having a first through hole through which the ion beam passes. The first structure includes a conductor, and an opening dimension of the first through hole is equal to or larger than an opening dimension of the first opening.

    Abstract translation: 根据一个实施例，一种装置制造装置包括：保持基板的基板保持部; 离子源，包括壳体，设置在壳体中的阳极，设置在壳体外部的阴极和设置在壳体的一部分中的第一开口，使得阳极暴露于阳极和衬底保持部分之间的区域， 所述离子源被配置为产生照射所述衬底的离子束; 以及设置在所述离子源和所述基板保持部之间的至少一个第一结构，并且具有离子束通过的第一通孔。 第一结构包括导体，第一通孔的开口尺寸等于或大于第一开口的开口尺寸。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    8.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20160380186A1

    公开(公告)日：2016-12-29

    申请号：US15259855

    申请日：2016-09-08

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Tadaomi DAIBOU ,  Yushi KATO ,  Shumpei OMINE ,  Naoki HASE ,  Junichi ITO

    IPC: H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/08 ,  G01R33/098 ,  G11B5/3909 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

    Abstract: A magnetoresistive element according to an embodiment includes a stack structure, the stack structure including: a first magnetic layer containing Mn and at least one element of Ga, Ge, or Al; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one element of Mg, Ba, Ca, C, Sr, Sc, Y, Gd, Tb, Dy, Ce, Ho, Yb, Er, or B.

    Abstract translation: 根据实施例的磁阻元件包括堆叠结构，所述堆叠结构包括：包含Mn和至少一种Ga，Ge或Al元素的第一磁性层; 第二磁性层; 设置在所述第一磁性层和所述第二磁性层之间的第一非磁性层; 设置在所述第一磁性层和所述第一非磁性层之间的第三磁性层; 以及设置在第一磁性层和第三磁性层之间的第二非磁性层，第二非磁性层含有Mg，Ba，Ca，C，Sr，Sc，Y，Gd，Tb，Dy，Ce，Ho中的至少一种元素 ，Yb，Er或B.

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