公开(公告)号：US20160380189A1

公开(公告)日：2016-12-29

申请号：US15263933

申请日：2016-09-13

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yuichi Ohsawa ,  Junichi Ito ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Naoki Tamaoki

IPC: H01L43/12 ,  H01J37/08 ,  H01J37/305 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01J37/08 ,  H01J37/3053 ,  H01J37/3056 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and second magnetic layers, forming a first mask layer having a predetermined plane shape on the laminated structure, and processing the laminated structure based on the first mask layer by using an ion beam whose solid angle in a center of the substrate is 10° or more.

Abstract translation: 根据一个实施例，磁阻效应元件的制造方法包括在基板上形成叠层结构，层压结构包括具有可变磁化方向的第一磁性层，具有不变磁化方向的第二磁性层， 在第一和第二磁性层之间形成磁性层，在叠层结构上形成具有预定平面形状的第一掩模层，并且通过使用在基板的中心处具有立体角的离子束来处理基于第一掩模层的层叠结构 是10°以上。

公开(公告)号：US20140087483A1

公开(公告)日：2014-03-27

申请号：US13847069

申请日：2013-03-19

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yuichi OHSAWA ,  Junichi Ito ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Naoki Tamaoki

IPC: H01L43/12

CPC classification number: H01L43/12 ,  H01J37/08 ,  H01J37/3053 ,  H01J37/3056 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and second magnetic layers, forming a first mask layer having a predetermined plane shape on the laminated structure, and processing the laminated structure based on the first mask layer by using an ion beam whose solid angle in a center of the substrate is 10° or more.

Abstract translation: 根据一个实施例，磁阻效应元件的制造方法包括在基板上形成叠层结构，层压结构包括具有可变磁化方向的第一磁性层，具有不变磁化方向的第二磁性层， 在第一和第二磁性层之间形成磁性层，在叠层结构上形成具有预定平面形状的第一掩模层，并且通过使用在基板的中心处具有立体角的离子束来处理基于第一掩模层的层叠结构 是10°以上。