公开(公告)号：US20130248355A1

公开(公告)日：2013-09-26

申请号：US13621978

申请日：2012-09-18

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yuichi Ohsawa ,  Junichi Ito ,  Shigeki Takahashi ,  Saori Kashiwada ,  Chikayoshi Kamata

IPC: C23F1/00

CPC classification number: H01L43/12 ,  H01F10/3254 ,  H01F41/308 ,  H01L21/32136 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first magnetic layer, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, forming a hard mask layer on the second magnetic layer, and patterning the second magnetic layer, the tunnel barrier layer, and the first magnetic layer, with a cluster ion beam using the hard mask layer as a mask, wherein the cluster ion beam comprises cluster ions, cluster sizes of the cluster ions are distributed, and a peak value of the distribution of the cluster sizes is 2 pieces or more and 1000 pieces or less.

Abstract translation: 根据一个实施例，一种制造磁阻元件的方法，该方法包括形成第一磁性层，在第一磁性层上形成隧道势垒层，在隧道势垒层上形成第二磁性层，在第 第二磁性层，使用该硬掩模层作为掩模以簇离子束形成第二磁性层，隧道势垒层和第一磁性层，其中，簇离子束包括簇离子， 簇离子分布，簇大小分布的峰值为2片以上且1000片以下。

公开(公告)号：US09299918B2

公开(公告)日：2016-03-29

申请号：US14504140

申请日：2014-10-01

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tadaomi Daibou ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01F10/32

CPC classification number: H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

Abstract translation: 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

公开(公告)号：US09117995B2

公开(公告)日：2015-08-25

申请号：US14023772

申请日：2013-09-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tadaomi Daibou ,  Eiji Kitagawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Yushi Kato ,  Megumi Yakabe

IPC: H01L43/08 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10

Abstract: A magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer.

Abstract translation: 磁阻元件包括具有第一表面和第二表面的第一磁性层，第二磁性层，设置在第一表面和第二磁性层之间的中间层，设置在第二表面上的第一层，含有B和至少一种元素选择 由Hf，Al，Mg和Ti构成的具有第三和第四表面的第二层，设置在第四表面上并含有B和选自Hf，Al和Mg中的至少一种元素的第二层，以及设置在第四表面的侧壁上的绝缘层 中间层并含有选自第二层中所含的Hf，Al和Mg中的至少一种元素。

公开(公告)号：US08994131B2

公开(公告)日：2015-03-31

申请号：US13833995

申请日：2013-03-15

Applicant: Kabushiki Kaisha Toshiba

Inventor： Naoharu Shimomura ,  Eiji Kitagawa ,  Chikayoshi Kamata ,  Minoru Amano ,  Yuichi Ohsawa ,  Daisuke Saida ,  Megumi Yakabe ,  Hiroaki Maekawa

IPC: H01L43/02 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/155 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory includes a first magnetoresistive element includes a storage layer with a perpendicular and variable magnetization, a tunnel barrier layer, and a reference layer with a perpendicular and invariable magnetization, and stacked in order thereof in a first direction, and a first shift corrective layer with a perpendicular and invariable magnetization, the first shift corrective layer and the storage layer arranged in a direction intersecting with the first direction. Magnetization directions of the reference layer and the first shift corrective layer are the same.

Abstract translation: 根据一个实施例，磁存储器包括第一磁阻元件，其包括具有垂直和可变磁化的存储层，隧道势垒层和具有垂直和不变磁化的参考层，并且按顺序在第一方向上堆叠， 以及具有垂直和不变磁化的第一移位校正层，所述第一移位校正层和所述存储层沿与所述第一方向相交的方向布置。 参考层和第一移位校正层的磁化方向相同。

公开(公告)号：US20140084402A1

公开(公告)日：2014-03-27

申请号：US13833995

申请日：2013-03-15

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoharu SHIMOMURA ,  Eiji Kitagawa ,  Chikayoshi Kamata ,  Minoru Amano ,  Yuichi Ohsawa ,  Daisuke Saida ,  Megumi Yakabe ,  Hiroaki Maekawa

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/155 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory includes a first magnetoresistive element includes a storage layer with a perpendicular and variable magnetization, a tunnel barrier layer, and a reference layer with a perpendicular and invariable magnetization, and stacked in order thereof in a first direction, and a first shift corrective layer with a perpendicular and invariable magnetization, the first shift corrective layer and the storage layer arranged in a direction intersecting with the first direction. Magnetization directions of the reference layer and the first shift corrective layer are the same.

Abstract translation: 根据一个实施例，磁存储器包括第一磁阻元件，其包括具有垂直和可变磁化的存储层，隧道势垒层和具有垂直和不变磁化的参考层，并且按顺序在第一方向上堆叠， 以及具有垂直和不变磁化的第一移位校正层，所述第一移位校正层和所述存储层沿与所述第一方向相交的方向布置。 参考层和第一移位校正层的磁化方向相同。

公开(公告)号：US20140206106A1

公开(公告)日：2014-07-24

申请号：US14223802

申请日：2014-03-24

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shigeki Takahashi ,  Yuichi Ohsawa ,  Junichi Ito ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Minoru Amano ,  Hiroaki Yoda

IPC: H01L43/12

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.

Abstract translation: 根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。 磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。 所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。 第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

公开(公告)号：US10103198B2

公开(公告)日：2018-10-16

申请号：US15062654

申请日：2016-03-07

Applicant: Kabushiki Kaisha Toshiba

Inventor： Saori Kashiwada ,  Yuichi Ohsawa ,  Daisuke Saida ,  Chikayoshi Kamata ,  Kazutaka Ikegami ,  Megumi Yakabe ,  Hiroaki Maekawa

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16

Abstract: A magnetoresistive element according to an embodiment includes: a multilayer structure including a first magnetic layer, a second magnetic layer disposed above the first magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a conductor disposed above the second magnetic layer, and including a lower face, an upper face opposing to the lower face, and a side face that is different from the lower face and the upper face, an area of the lower face of the conductor being smaller than an area of the upper face of the conductor, and smaller than an area of an upper face of the second magnetic layer; and a carbon-containing layer disposed on the side face of the conductor.

公开(公告)号：US09935260B2

公开(公告)日：2018-04-03

申请号：US15265080

申请日：2016-09-14

Applicant: Kabushiki Kaisha Toshiba

Inventor： Daisuke Saida ,  Shogo Itai ,  Chikayoshi Kamata

IPC: H01L29/82 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer, a second magnetic layer, a third magnetic layer, and a first non-magnetic layer. The third magnetic layer is provided between a first part of the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the third magnetic layer. The first magnetic layer further includes a second part. At least a portion of the second part overlaps at least a portion of the third magnetic layer in a second direction orthogonal to a first direction from the first part toward the second magnetic layer.

公开(公告)号：US20160380189A1

公开(公告)日：2016-12-29

申请号：US15263933

申请日：2016-09-13

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yuichi Ohsawa ,  Junichi Ito ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Naoki Tamaoki

IPC: H01L43/12 ,  H01J37/08 ,  H01J37/305 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01J37/08 ,  H01J37/3053 ,  H01J37/3056 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and second magnetic layers, forming a first mask layer having a predetermined plane shape on the laminated structure, and processing the laminated structure based on the first mask layer by using an ion beam whose solid angle in a center of the substrate is 10° or more.

Abstract translation: 根据一个实施例，磁阻效应元件的制造方法包括在基板上形成叠层结构，层压结构包括具有可变磁化方向的第一磁性层，具有不变磁化方向的第二磁性层， 在第一和第二磁性层之间形成磁性层，在叠层结构上形成具有预定平面形状的第一掩模层，并且通过使用在基板的中心处具有立体角的离子束来处理基于第一掩模层的层叠结构 是10°以上。

公开(公告)号：US20160268338A1

公开(公告)日：2016-09-15

申请号：US15062654

申请日：2016-03-07

Applicant: Kabushiki Kaisha Toshiba

Inventor： Saori KASHIWADA ,  Yuichi Ohsawa ,  Daisuke Saida ,  Chikayoshi Kamata ,  Kazutaka Ikegami ,  Megumi Yakabe ,  Hiroaki Maekawa

IPC: H01L27/22 ,  G11C11/16 ,  H01L23/528 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetoresistive element according to an embodiment includes: a multilayer structure including a first magnetic layer, a second magnetic layer disposed above the first magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a conductor disposed above the second magnetic layer, and including a lower face, an upper face opposing to the lower face, and a side face that is different from the lower face and the upper face, an area of the lower face of the conductor being smaller than an area of the upper face of the conductor, and smaller than an area of an upper face of the second magnetic layer; and a carbon-containing layer disposed on the side face of the conductor.

Abstract translation: 根据实施例的磁阻元件包括：多层结构，包括第一磁性层，设置在第一磁性层上方的第二磁性层和设置在第一磁性层和第二磁性层之间的非磁性层; 布置在所述第二磁性层上方的导体，并且包括下表面，与所述下表面相对的上表面以及与所述下表面和所述上表面不同的侧面，所述导体的下表面的面积为 小于所述导体的上表面的面积，并且小于所述第二磁性层的上表面的面积; 以及设置在导体的侧面上的含碳层。