公开(公告)号：US09508926B2

公开(公告)日：2016-11-29

申请号：US14637254

申请日：2015-03-03

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Eiji Kitagawa ,  Minoru Amano ,  Megumi Yakabe ,  Hiroaki Maekawa

IPC: H01L43/02 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12 ,  H01L43/00 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive effect element includes a recording layer having magnetic anisotropy and a variable magnetization direction, a reference layer having magnetic anisotropy and an invariable magnetization direction, an intermediate layer between the recording layer and the reference layer, an underlayer containing scandium (Sc) and disposed on a surface side of the recording layer opposite to a surface side on which the recording layer is disposed, and a side wall layer containing an oxide of Sc and disposed on side surfaces of the recording layer and the intermediate layer.

Abstract translation: 磁阻效应元件包括具有磁各向异性和可变磁化方向的记录层，具有磁各向异性和不变磁化方向的参考层，记录层和参考层之间的中间层，含有钪（Sc）的底层， 在记录层的与设置有记录层的表面侧相反的表面侧，以及包含Sc的氧化物并设置在记录层和中间层的侧表面上的侧壁层。

公开(公告)号：US10103198B2

公开(公告)日：2018-10-16

申请号：US15062654

申请日：2016-03-07

Applicant: Kabushiki Kaisha Toshiba

Inventor： Saori Kashiwada ,  Yuichi Ohsawa ,  Daisuke Saida ,  Chikayoshi Kamata ,  Kazutaka Ikegami ,  Megumi Yakabe ,  Hiroaki Maekawa

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16

Abstract: A magnetoresistive element according to an embodiment includes: a multilayer structure including a first magnetic layer, a second magnetic layer disposed above the first magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a conductor disposed above the second magnetic layer, and including a lower face, an upper face opposing to the lower face, and a side face that is different from the lower face and the upper face, an area of the lower face of the conductor being smaller than an area of the upper face of the conductor, and smaller than an area of an upper face of the second magnetic layer; and a carbon-containing layer disposed on the side face of the conductor.

公开(公告)号：US20160268338A1

公开(公告)日：2016-09-15

申请号：US15062654

申请日：2016-03-07

Applicant: Kabushiki Kaisha Toshiba

Inventor： Saori KASHIWADA ,  Yuichi Ohsawa ,  Daisuke Saida ,  Chikayoshi Kamata ,  Kazutaka Ikegami ,  Megumi Yakabe ,  Hiroaki Maekawa

IPC: H01L27/22 ,  G11C11/16 ,  H01L23/528 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetoresistive element according to an embodiment includes: a multilayer structure including a first magnetic layer, a second magnetic layer disposed above the first magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a conductor disposed above the second magnetic layer, and including a lower face, an upper face opposing to the lower face, and a side face that is different from the lower face and the upper face, an area of the lower face of the conductor being smaller than an area of the upper face of the conductor, and smaller than an area of an upper face of the second magnetic layer; and a carbon-containing layer disposed on the side face of the conductor.

Abstract translation: 根据实施例的磁阻元件包括：多层结构，包括第一磁性层，设置在第一磁性层上方的第二磁性层和设置在第一磁性层和第二磁性层之间的非磁性层; 布置在所述第二磁性层上方的导体，并且包括下表面，与所述下表面相对的上表面以及与所述下表面和所述上表面不同的侧面，所述导体的下表面的面积为 小于所述导体的上表面的面积，并且小于所述第二磁性层的上表面的面积; 以及设置在导体的侧面上的含碳层。

公开(公告)号：US09117995B2

公开(公告)日：2015-08-25

申请号：US14023772

申请日：2013-09-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tadaomi Daibou ,  Eiji Kitagawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Yushi Kato ,  Megumi Yakabe

IPC: H01L43/08 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10

Abstract: A magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer.

Abstract translation: 磁阻元件包括具有第一表面和第二表面的第一磁性层，第二磁性层，设置在第一表面和第二磁性层之间的中间层，设置在第二表面上的第一层，含有B和至少一种元素选择 由Hf，Al，Mg和Ti构成的具有第三和第四表面的第二层，设置在第四表面上并含有B和选自Hf，Al和Mg中的至少一种元素的第二层，以及设置在第四表面的侧壁上的绝缘层 中间层并含有选自第二层中所含的Hf，Al和Mg中的至少一种元素。

公开(公告)号：US08994131B2

公开(公告)日：2015-03-31

申请号：US13833995

申请日：2013-03-15

Applicant: Kabushiki Kaisha Toshiba

Inventor： Naoharu Shimomura ,  Eiji Kitagawa ,  Chikayoshi Kamata ,  Minoru Amano ,  Yuichi Ohsawa ,  Daisuke Saida ,  Megumi Yakabe ,  Hiroaki Maekawa

IPC: H01L43/02 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/155 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory includes a first magnetoresistive element includes a storage layer with a perpendicular and variable magnetization, a tunnel barrier layer, and a reference layer with a perpendicular and invariable magnetization, and stacked in order thereof in a first direction, and a first shift corrective layer with a perpendicular and invariable magnetization, the first shift corrective layer and the storage layer arranged in a direction intersecting with the first direction. Magnetization directions of the reference layer and the first shift corrective layer are the same.

Abstract translation: 根据一个实施例，磁存储器包括第一磁阻元件，其包括具有垂直和可变磁化的存储层，隧道势垒层和具有垂直和不变磁化的参考层，并且按顺序在第一方向上堆叠， 以及具有垂直和不变磁化的第一移位校正层，所述第一移位校正层和所述存储层沿与所述第一方向相交的方向布置。 参考层和第一移位校正层的磁化方向相同。

公开(公告)号：US20140084402A1

公开(公告)日：2014-03-27

申请号：US13833995

申请日：2013-03-15

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoharu SHIMOMURA ,  Eiji Kitagawa ,  Chikayoshi Kamata ,  Minoru Amano ,  Yuichi Ohsawa ,  Daisuke Saida ,  Megumi Yakabe ,  Hiroaki Maekawa

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/155 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory includes a first magnetoresistive element includes a storage layer with a perpendicular and variable magnetization, a tunnel barrier layer, and a reference layer with a perpendicular and invariable magnetization, and stacked in order thereof in a first direction, and a first shift corrective layer with a perpendicular and invariable magnetization, the first shift corrective layer and the storage layer arranged in a direction intersecting with the first direction. Magnetization directions of the reference layer and the first shift corrective layer are the same.

Abstract translation: 根据一个实施例，磁存储器包括第一磁阻元件，其包括具有垂直和可变磁化的存储层，隧道势垒层和具有垂直和不变磁化的参考层，并且按顺序在第一方向上堆叠， 以及具有垂直和不变磁化的第一移位校正层，所述第一移位校正层和所述存储层沿与所述第一方向相交的方向布置。 参考层和第一移位校正层的磁化方向相同。