发明申请
- 专利标题: MAGNETIC MEMORY
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申请号: US15704867申请日: 2017-09-14
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公开(公告)号: US20180277746A1公开(公告)日: 2018-09-27
- 发明人: Keiko ABE , Kazutaka IKEGAMI , Shinobu FUJITA , Katsuhiko KOUI , Tomoaki INOKUCHI , Satoshi SHIROTORI , Yuichi OHSAWA , Hideyuki SUGIYAMA , Hiroaki YODA , Naoharu SHIMOMURA , Yuuzo KAMIGUCHI
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: JP Minato-ku
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2017-055168 20170321
- 主分类号: H01L43/02
- IPC分类号: H01L43/02 ; H01L43/08 ; H01L27/22 ; G11C11/16
摘要:
A magnetic memory includes: first to fourth wirings; first and second terminals; a first conductive layer including first to third regions, the second region being between the first region and the third region, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; a first magnetoresistive element including a first and a second magnetic layer, and a first nonmagnetic layer disposed between the first and the magnetic layer; a first transistor including a third terminal electrically connected to the first magnetic layer, a fourth terminal electrically connected to the third wiring, and a first control terminal electrically connected to the first wiring; and a second transistor including a fifth terminal electrically connected to the first terminal, a sixth terminal electrically connected to the second wiring, and a second control terminal electrically connected to the first wiring.
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