- 专利标题： Magnetic memory including a magnetoresistive device that includes a first magnetic layer having a fixed magnetization and a second magnetic layer having a changeable magnetization
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申请号： US15266598申请日： 2016-09-15
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公开(公告)号： US10283697B2公开(公告)日： 2019-05-07
- 发明人: Tomoaki Inokuchi , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Minato-ku
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2016-052961 20160316
- 主分类号： H01L27/22
- IPC分类号： H01L27/22 ; H01L43/02 ; G11C11/16 ; H01L43/08 ; H01L43/10 ; G11C11/18
摘要：
A magnetic memory according to an embodiment includes: a magnetoresistive device including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer between the first magnetic layer and the second magnetic layer; a first wiring electrically connected to the first magnetic layer; a second wiring that is electrically connected to the second magnetic layer and contains an antiferromagnetic material; a third wiring crossing the second wiring; an insulating layer between the second wiring and the third wiring; a first write circuit for applying a voltage between the second wiring and the third wiring; and a read circuit electrically connected to the first wiring and the second wiring.
公开/授权文献
- US20170271574A1 MAGNETIC MEMORY 公开/授权日：2017-09-21
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