发明申请
- 专利标题: MAGNETIC MEMORY
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申请号: US15875549申请日: 2018-01-19
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公开(公告)号: US20180145247A1公开(公告)日: 2018-05-24
- 发明人: Yoshiaki SAITO , Hiroaki Yoda , Yushi Kato , Mizue Ishikawa , Soichi Oikawa
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: JP Minato-ku
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2016-153898 20160804
- 主分类号: H01L43/02
- IPC分类号: H01L43/02 ; H01L27/22 ; H01L43/08 ; H01L43/10
摘要:
A magnetic memory of an embodiment includes: a first terminal to third terminals; a first nonmagnetic layer, which is conductive, including a first portion, a second portion, and a third portion, the first portion being disposed between the second portion and the third portion, the second portion being electrically connected to the first terminal, and the third portion being electrically connected to the second terminal; a first magnetoresistive element including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the first portion, and a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a first layer at least disposed between the first portion and the second magnetic layer, and including at least one of Mg, Al, Si, Hf, or a rare earth element, and at least one of oxygen or nitrogen.
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