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公开(公告)号：US20160380119A1
公开(公告)日：2016-12-29
申请号：US15084874
申请日：2016-03-30
发明人： Dong Yun JUNG , Hyun Soo LEE , Sang Choon KO , Jeong-Jin KIM , Zin-Sig KIM , Jeho NA , Eun Soo NAM , Jae Kyoung MUN , Young Rak PARK , Sung-Bum BAE , Hyung Seok LEE , Woojin CHANG , Hyungyu JANG , Chi Hoon JUN
IPC分类号： H01L29/872 , H01L29/205 , H01L29/45 , H01L21/02 , H01L23/29 , H01L29/47 , H01L29/66 , H01L21/306 , H01L29/20 , H01L23/31
CPC分类号： H01L21/0228 , H01L23/291 , H01L23/3178 , H01L29/2003 , H01L29/205 , H01L29/66212 , H01L29/872
摘要： A first nitride semiconductor layer of a semiconductor device is provided on a substrate, a second nitride semiconductor layer is provided on the first nitride semiconductor layer, a first ohmic metal and a second ohmic metal are provided on the second nitride semiconductor layer, a recess region is provided in the second nitride semiconductor layer between the first ohmic metal and the second ohmic metal, a passivation layer covers side of the first ohmic metal and a bottom surface and sides of the recess region, and a Schottky electrode is provided on the first ohmic metal and extends into the recess region.
摘要翻译： 半导体器件的第一氮化物半导体层设置在衬底上，第二氮化物半导体层设置在第一氮化物半导体层上，第一欧姆金属和第二欧姆金属设置在第二氮化物半导体层上，凹部 在所述第一欧姆金属和所述第二欧姆金属之间的所述第二氮化物半导体层中设置钝化层，所述钝化层覆盖所述第一欧姆金属的一侧，并且所述钝化层覆盖所述凹部区域的底表面和所述侧面，并且所述第一欧姆金属的肖特基电极 金属并延伸到凹陷区域中。
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公开(公告)号：US20170062385A1
公开(公告)日：2017-03-02
申请号：US15221089
申请日：2016-07-27
发明人： Dong Yun JUNG , Sang Choon KO , Chi Hoon JUN , Minki KIM , Jeho NA , EUN SOO NAM , Young Rak PARK , Junbo PARK , Hyun Soo LEE , Hyung Seok LEE , Hyun-Gyu JANG
IPC分类号： H01L25/065 , H01L29/78 , H01L23/522 , H01L23/528 , H02M3/158 , H01L23/373
CPC分类号： H01L25/0652 , H01L23/367 , H01L23/3736 , H01L23/4012 , H01L23/49822 , H01L23/50 , H01L23/5226 , H01L23/528 , H01L25/072 , H01L29/78 , H02M3/156
摘要： Disclosed is a power converting device including: a first laminate having a plurality of non-magnetic substrates which are laminated; electronic devices disposed on at least one of the non-magnetic substrates; first conductive patterns disposed on the non-magnetic substrate on which the electronic devices are disposed, the first conductive patterns being connected to the electronic devices; at least one via electrode connecting the respective first conductive patterns to each other; a second laminate disposed on one side of the first laminate and having a plurality of magnetic sheets which are laminated; second conductive patterns disposed on at least two magnetic sheets among the plurality of magnetic sheets; and at least one via electrode connecting the respective second conductive patterns to each other, wherein the first and second via electrodes are connected to each other.
摘要翻译： 公开了一种电力转换装置，包括：第一层压体，其具有层叠的多个非磁性基板; 设置在所述非磁性基板中的至少一个上的电子设备; 布置在其上设置有电子设备的非磁性基板上的第一导电图案，第一导电图案连接到电子设备; 将相应的第一导电图案彼此连接的至少一个通孔电极; 第二层压体，其设置在所述第一层叠体的一侧，并且具有层叠的多个磁性片; 设置在所述多个磁性片中的至少两个磁性片上的第二导电图案; 以及将各个第二导电图案彼此连接的至少一个通孔电极，其中所述第一和第二通孔电极彼此连接。
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公开(公告)号：US20190103483A1
公开(公告)日：2019-04-04
申请号：US16137235
申请日：2018-09-20
发明人： Hokyun AHN , Min Jeong SHIN , Jeong Jin KIM , Hae Cheon KIM , Jae Won DO , Byoung-Gue MIN , Hyung Sup YOON , Hyung Seok LEE , Jong-Won LIM , Sungjae CHANG , Hyunwook JUNG , Kyu Jun CHO , Dong Min KANG , Dong-Young KIM , SEONG-IL KIM , Sang-Heung LEE , Jongmin LEE , Hong Gu JI
IPC分类号： H01L29/78 , H01L29/20 , H01L29/45 , H01L29/417 , H01L29/423 , H01L29/66 , H01L21/3065
摘要： Provided is a semiconductor device including a substrate in which an insulation layer is disposed between a first semiconductor layer and a second semiconductor layer, a through-hole penetrating through the substrate, the through-hole having a first hole penetrating through the first semiconductor layer and a second hole penetrating through the insulation layer and the second semiconductor layer from a bottom surface of the first hole, an epi-layer disposed inside the through-hole, a drain electrode disposed inside the second hole and contacting one surface of the epi-layer, and a source electrode and a gate electrode which are disposed on the other surface of the epi-layer.
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公开(公告)号：US20170025550A1
公开(公告)日：2017-01-26
申请号：US15215414
申请日：2016-07-20
发明人： Dong Yun JUNG , Hyun Soo LEE , Sang Choon KO , Minki KIM , Jeho NA , EUN SOO NAM , Young Rak PARK , Junbo PARK , Hyung Seok LEE , Hyun-Gyu JANG , Chi Hoon JUN
IPC分类号： H01L29/861 , H01L29/205
CPC分类号： H01L29/205 , H01L29/2003 , H01L29/66212 , H01L29/872
摘要： Provided is a bridge diode according to an embodiment of the inventive concept. The bridge diode includes a first structure including a first lower nitride film and a first upper nitride film, which are laminated on the substrate, a second structure including a second lower nitride film and a second upper nitride film, which are laminated on the substrate, a first electrode structural body disposed on the first structure, and a second electrode structural body disposed on the second structure. The first electrode structural body includes a first electrode, a second electrode, and a third electrode, which are arranged in a clockwise direction, the second electrode structural body includes a fourth electrode, a fifth electrode, and a sixth electrode, which are arranged in a clockwise direction, the first electrode and the sixth electrode, which are connected to each other, are connected to an external circuit, the third electrode and the fourth electrode, which are connected to each other, are connected to an external circuit, and each of the second electrode and the fifth electrode is connected to the external circuit.
摘要翻译： 提供根据本发明构思的实施例的桥式二极管。 桥式二极管包括层叠在基板上的第一下部氮化物膜和第一上部氮化物膜的第一结构，包括层叠在基板上的第二下部氮化物膜和第二上部氮化物膜的第二结构， 设置在第一结构上的第一电极结构体和设置在第二结构上的第二电极结构体。 第一电极结构体包括沿顺时针方向布置的第一电极，第二电极和第三电极，第二电极结构体包括第四电极，第五电极和第六电极，其布置在 连接到彼此连接的顺时针方向，第一电极和第六电极连接到彼此连接的外部电路，第三电极和第四电极连接到外部电路，并且每个 的第二电极和第五电极连接到外部电路。
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公开(公告)号：US20200235028A1
公开(公告)日：2020-07-23
申请号：US16839964
申请日：2020-04-03
发明人： Hyung Seok LEE , Zin-Sig KIM , Sung-Bum BAE
IPC分类号： H01L23/367 , H01L23/00 , H01L23/538 , H01L25/065
摘要： Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a heat dissipation plate including a first region and a second region, a first element disposed on the heat dissipation plate in the first region, and a second element disposed on the heat dissipation plate in the second region. The first element includes a first substrate, the second element includes a second substrate, the first substrate includes a material different from a material of the second substrate, the first substrate contacts the heat dissipation plate, and the second element is bonded to the heat dissipation plate in a flip-chip bonding manner
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公开(公告)号：US20170141704A1
公开(公告)日：2017-05-18
申请号：US15299519
申请日：2016-10-21
发明人： Chi Hoon JUN , Sang Choon KO , Minki KIM , Jeho NA , Young Rak PARK , Junbo PARK , Hyun Soo LEE , Hyung Seok LEE , Hyun-Gyu JANG , Dong Yun JUNG
IPC分类号： H02N2/18 , H01L41/113 , H01L29/872 , H01L29/84 , H01L29/20 , H01L29/205
CPC分类号： H02N2/186 , H01L27/20 , H01L29/2003 , H01L29/205 , H01L29/84 , H01L29/872 , H01L41/1136
摘要： Provided is a hybrid diode device. The hybrid diode device includes a first lower nitride layer disposed on a substrate and including a first 2-dimensional electron gas (2DEG) layer, a second lower nitride layer extending from the first lower nitride layer to the outside of the substrate and including a second 2DEG layer, a first upper nitride layer disposed on the first lower nitride layer, a second upper nitride layer disposed on the second lower nitride layer, a first cap layer disposed on the first upper nitride layer, a second cap layer disposed on the second upper nitride layer, a first electrode structure connected to the first lower nitride layer and the first cap layer; and a second electrode structure connected to the second lower nitride layer and the first electrode structure. The second lower nitride layer generates electric energy through dynamic movement.
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7.发明申请APPARATUS AND METHOD FOR MANAGING INSTANT CONNECTION BASED ON WIRELESS LOCAL AREA NETWORK 审中-公开基于无线局域网管理即时连接的装置和方法公开(公告)号：US20150312945A1
公开(公告)日：2015-10-29
申请号：US14492317
申请日：2014-09-22
发明人： Choong Bum PARK , Jae Guk GWON , Do Hyung KIM , Cheol RYU , Jin Suk MA , Jae Bok PARK , Seok Jin YOON , Kyung Hee LEE , Jae Ho LEE , Hyung Seok LEE , Sung Ho IM
CPC分类号： H04W12/04 , H04W12/003 , H04W12/08 , H04W84/12
摘要： An apparatus and a method for managing instant connection based on a wireless local area network are provided. The method includes: creating, by an accessed terminal, connection information required for setting connection therewith; creating, by the accessed terminal, a management frame by using the connection information; transmitting, by the accessed terminal, the created management frame to a peripheral terminal; receiving, by the peripheral terminal, the management frame and extracting connection information from the received management frame; and setting, by the peripheral terminal, connection with the accessed terminal by accessing the accessed terminal by using the extracted connection information to rapidly access a desired terminal without performing a device discovery process.
摘要翻译： 提供了一种用于管理基于无线局域网的即时连接的装置和方法。 该方法包括：由访问终端创建与其进行连接所需的连接信息; 由所访问的终端通过使用所述连接信息来创建管理帧; 由所访问的终端将创建的管理帧发送到外围终端; 由所述外围终端接收所述管理帧并从所接收的管理帧提取连接信息; 并且通过外部终端通过使用所提取的连接信息访问所访问的终端来设置与所访问的终端的连接，以快速访问期望的终端，而不执行设备发现处理。
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8.发明申请APPARATUS FOR PROVIDING INFORMATION ABOUT AVAILABLE SERVICE USING PROXY SERVER AND METHOD THEREFOR 有权提供使用代理服务器的可用服务信息的方法及其方法公开(公告)号：US20150208325A1
公开(公告)日：2015-07-23
申请号：US14603198
申请日：2015-01-22
发明人： Cheol RYU , Hyung Seok LEE , Jae Ho LEE , Seok Jin YOON , Do Hyung KIM , Jin Suk MA , Choong Bum PARK
CPC分类号： H04W48/14 , H04L67/2838 , H04W4/06
摘要： An apparatus for providing information about an available service using a proxy server and a method thereof. The apparatus includes an available service checker, a database, an available service searcher, and an available service broadcaster. The apparatus may provide information through the proxy server regarding available services of a device that is not currently connected to a basic service set (BSS), thereby preventing generation of excessive amount of traffic.
摘要翻译： 一种使用代理服务器提供关于可用服务的信息的装置及其方法。 该装置包括可用服务检查器，数据库，可用服务搜索器和可用服务广播器。 该装置可以通过代理服务器提供关于当前未连接到基本服务集（BSS）的设备的可用服务的信息，从而防止产生过量的业务。
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公开(公告)号：US20190096782A1
公开(公告)日：2019-03-28
申请号：US16134286
申请日：2018-09-18
发明人： Hyung Seok LEE , Zin-Sig KIM , Sung-Bum BAE
IPC分类号： H01L23/367 , H01L25/065 , H01L29/20 , H01L23/538 , H01L23/373
摘要： Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a heat dissipation plate including a first region and a second region, a first element disposed on the heat dissipation plate in the first region, and a second element disposed on the heat dissipation plate in the second region. The first element includes a first substrate, the second element includes a second substrate, the first substrate includes a material different from a material of the second substrate, the first substrate contacts the heat dissipation plate, and the second element is bonded to the heat dissipation plate in a flip-chip bonding manner.
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公开(公告)号：US20170213904A1
公开(公告)日：2017-07-27
申请号：US15414156
申请日：2017-01-24
发明人： Jeho NA , Hyung Seok LEE , Chi Hoon JUN , Sang Choon KO , Myungjoon KWACK , Young Rak PARK , Woojin CHANG , Hyun-Gyu JANG , Dong Yun JUNG
IPC分类号： H01L29/778 , H01L29/205 , H01L29/66 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/20 , H01L23/31
CPC分类号： H01L29/7787 , H01L23/315 , H01L23/3171 , H01L29/0649 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42364 , H01L29/42372 , H01L29/66462 , H01L29/7786
摘要： A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer, a first passivation pattern provided on the semiconductor structure, and first and second conductive patterns provided on the semiconductor structure and spaced from the first passivation pattern.
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