公开(公告)号：US20170141704A1

公开(公告)日：2017-05-18

申请号：US15299519

申请日：2016-10-21

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Chi Hoon JUN ,  Sang Choon KO ,  Minki KIM ,  Jeho NA ,  Young Rak PARK ,  Junbo PARK ,  Hyun Soo LEE ,  Hyung Seok LEE ,  Hyun-Gyu JANG ,  Dong Yun JUNG

IPC分类号： H02N2/18 ,  H01L41/113 ,  H01L29/872 ,  H01L29/84 ,  H01L29/20 ,  H01L29/205

CPC分类号： H02N2/186 ,  H01L27/20 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/84 ,  H01L29/872 ,  H01L41/1136

摘要： Provided is a hybrid diode device. The hybrid diode device includes a first lower nitride layer disposed on a substrate and including a first 2-dimensional electron gas (2DEG) layer, a second lower nitride layer extending from the first lower nitride layer to the outside of the substrate and including a second 2DEG layer, a first upper nitride layer disposed on the first lower nitride layer, a second upper nitride layer disposed on the second lower nitride layer, a first cap layer disposed on the first upper nitride layer, a second cap layer disposed on the second upper nitride layer, a first electrode structure connected to the first lower nitride layer and the first cap layer; and a second electrode structure connected to the second lower nitride layer and the first electrode structure. The second lower nitride layer generates electric energy through dynamic movement.

公开(公告)号：US20170117889A1

公开(公告)日：2017-04-27

申请号：US15223826

申请日：2016-07-29

申请人： Electronics and Telecommunications Research Institute

发明人： Minki KIM ,  Hyun-Gyu JANG ,  Dong Yun JUNG ,  Sang Choon KO ,  Hyun Soo LEE ,  Chi Hoon JUN

IPC分类号： H03K17/081 ,  H01L27/088 ,  H01L29/20 ,  H01L29/778

CPC分类号： H03K17/08104 ,  H01L27/0883 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/778 ,  H01L29/7786 ,  H03K17/102 ,  H03K2017/6875

摘要： Provided is a stabilizing circuit structure using a sense field effect transistor (sense-FET). A power semiconductor module includes a depletion-mode field effect transistor (D-mode FET) and the sense FET that has same structure as the D-mode FET and varies in area. Also the power semiconductor module includes not only an enhancement-mode field effect transistor (E-mode FET), but also the stabilizing circuit including circuit elements such as a resistor, a capacitor, an inductor, or a diode.

公开(公告)号：US20170025550A1

公开(公告)日：2017-01-26

申请号：US15215414

申请日：2016-07-20

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Dong Yun JUNG ,  Hyun Soo LEE ,  Sang Choon KO ,  Minki KIM ,  Jeho NA ,  EUN SOO NAM ,  Young Rak PARK ,  Junbo PARK ,  Hyung Seok LEE ,  Hyun-Gyu JANG ,  Chi Hoon JUN

IPC分类号： H01L29/861 ,  H01L29/205

CPC分类号： H01L29/205 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/872

摘要： Provided is a bridge diode according to an embodiment of the inventive concept. The bridge diode includes a first structure including a first lower nitride film and a first upper nitride film, which are laminated on the substrate, a second structure including a second lower nitride film and a second upper nitride film, which are laminated on the substrate, a first electrode structural body disposed on the first structure, and a second electrode structural body disposed on the second structure. The first electrode structural body includes a first electrode, a second electrode, and a third electrode, which are arranged in a clockwise direction, the second electrode structural body includes a fourth electrode, a fifth electrode, and a sixth electrode, which are arranged in a clockwise direction, the first electrode and the sixth electrode, which are connected to each other, are connected to an external circuit, the third electrode and the fourth electrode, which are connected to each other, are connected to an external circuit, and each of the second electrode and the fifth electrode is connected to the external circuit.

摘要翻译： 提供根据本发明构思的实施例的桥式二极管。 桥式二极管包括层叠在基板上的第一下部氮化物膜和第一上部氮化物膜的第一结构，包括层叠在基板上的第二下部氮化物膜和第二上部氮化物膜的第二结构， 设置在第一结构上的第一电极结构体和设置在第二结构上的第二电极结构体。 第一电极结构体包括沿顺时针方向布置的第一电极，第二电极和第三电极，第二电极结构体包括第四电极，第五电极和第六电极，其布置在 连接到彼此连接的顺时针方向，第一电极和第六电极连接到彼此连接的外部电路，第三电极和第四电极连接到外部电路，并且每个 的第二电极和第五电极连接到外部电路。

公开(公告)号：US20160380119A1

公开(公告)日：2016-12-29

申请号：US15084874

申请日：2016-03-30

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Dong Yun JUNG ,  Hyun Soo LEE ,  Sang Choon KO ,  Jeong-Jin KIM ,  Zin-Sig KIM ,  Jeho NA ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Young Rak PARK ,  Sung-Bum BAE ,  Hyung Seok LEE ,  Woojin CHANG ,  Hyungyu JANG ,  Chi Hoon JUN

IPC分类号： H01L29/872 ,  H01L29/205 ,  H01L29/45 ,  H01L21/02 ,  H01L23/29 ,  H01L29/47 ,  H01L29/66 ,  H01L21/306 ,  H01L29/20 ,  H01L23/31

CPC分类号： H01L21/0228 ,  H01L23/291 ,  H01L23/3178 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66212 ,  H01L29/872

摘要： A first nitride semiconductor layer of a semiconductor device is provided on a substrate, a second nitride semiconductor layer is provided on the first nitride semiconductor layer, a first ohmic metal and a second ohmic metal are provided on the second nitride semiconductor layer, a recess region is provided in the second nitride semiconductor layer between the first ohmic metal and the second ohmic metal, a passivation layer covers side of the first ohmic metal and a bottom surface and sides of the recess region, and a Schottky electrode is provided on the first ohmic metal and extends into the recess region.

摘要翻译： 半导体器件的第一氮化物半导体层设置在衬底上，第二氮化物半导体层设置在第一氮化物半导体层上，第一欧姆金属和第二欧姆金属设置在第二氮化物半导体层上，凹部 在所述第一欧姆金属和所述第二欧姆金属之间的所述第二氮化物半导体层中设置钝化层，所述钝化层覆盖所述第一欧姆金属的一侧，并且所述钝化层覆盖所述凹部区域的底表面和所述侧面，并且所述第一欧姆金属的肖特基电极 金属并延伸到凹陷区域中。

公开(公告)号：US20170062385A1

公开(公告)日：2017-03-02

申请号：US15221089

申请日：2016-07-27

申请人： Electronics and Telecommunications Research Institute

发明人： Dong Yun JUNG ,  Sang Choon KO ,  Chi Hoon JUN ,  Minki KIM ,  Jeho NA ,  EUN SOO NAM ,  Young Rak PARK ,  Junbo PARK ,  Hyun Soo LEE ,  Hyung Seok LEE ,  Hyun-Gyu JANG

IPC分类号： H01L25/065 ,  H01L29/78 ,  H01L23/522 ,  H01L23/528 ,  H02M3/158 ,  H01L23/373

CPC分类号： H01L25/0652 ,  H01L23/367 ,  H01L23/3736 ,  H01L23/4012 ,  H01L23/49822 ,  H01L23/50 ,  H01L23/5226 ,  H01L23/528 ,  H01L25/072 ,  H01L29/78 ,  H02M3/156

摘要： Disclosed is a power converting device including: a first laminate having a plurality of non-magnetic substrates which are laminated; electronic devices disposed on at least one of the non-magnetic substrates; first conductive patterns disposed on the non-magnetic substrate on which the electronic devices are disposed, the first conductive patterns being connected to the electronic devices; at least one via electrode connecting the respective first conductive patterns to each other; a second laminate disposed on one side of the first laminate and having a plurality of magnetic sheets which are laminated; second conductive patterns disposed on at least two magnetic sheets among the plurality of magnetic sheets; and at least one via electrode connecting the respective second conductive patterns to each other, wherein the first and second via electrodes are connected to each other.

摘要翻译： 公开了一种电力转换装置，包括：第一层压体，其具有层叠的多个非磁性基板; 设置在所述非磁性基板中的至少一个上的电子设备; 布置在其上设置有电子设备的非磁性基板上的第一导电图案，第一导电图案连接到电子设备; 将相应的第一导电图案彼此连接的至少一个通孔电极; 第二层压体，其设置在所述第一层叠体的一侧，并且具有层叠的多个磁性片; 设置在所述多个磁性片中的至少两个磁性片上的第二导电图案; 以及将各个第二导电图案彼此连接的至少一个通孔电极，其中所述第一和第二通孔电极彼此连接。