公开(公告)号：US20160380119A1

公开(公告)日：2016-12-29

申请号：US15084874

申请日：2016-03-30

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Dong Yun JUNG ,  Hyun Soo LEE ,  Sang Choon KO ,  Jeong-Jin KIM ,  Zin-Sig KIM ,  Jeho NA ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Young Rak PARK ,  Sung-Bum BAE ,  Hyung Seok LEE ,  Woojin CHANG ,  Hyungyu JANG ,  Chi Hoon JUN

IPC: H01L29/872 ,  H01L29/205 ,  H01L29/45 ,  H01L21/02 ,  H01L23/29 ,  H01L29/47 ,  H01L29/66 ,  H01L21/306 ,  H01L29/20 ,  H01L23/31

CPC classification number: H01L21/0228 ,  H01L23/291 ,  H01L23/3178 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66212 ,  H01L29/872

Abstract: A first nitride semiconductor layer of a semiconductor device is provided on a substrate, a second nitride semiconductor layer is provided on the first nitride semiconductor layer, a first ohmic metal and a second ohmic metal are provided on the second nitride semiconductor layer, a recess region is provided in the second nitride semiconductor layer between the first ohmic metal and the second ohmic metal, a passivation layer covers side of the first ohmic metal and a bottom surface and sides of the recess region, and a Schottky electrode is provided on the first ohmic metal and extends into the recess region.

Abstract translation: 半导体器件的第一氮化物半导体层设置在衬底上，第二氮化物半导体层设置在第一氮化物半导体层上，第一欧姆金属和第二欧姆金属设置在第二氮化物半导体层上，凹部 在所述第一欧姆金属和所述第二欧姆金属之间的所述第二氮化物半导体层中设置钝化层，所述钝化层覆盖所述第一欧姆金属的一侧，并且所述钝化层覆盖所述凹部区域的底表面和所述侧面，并且所述第一欧姆金属的肖特基电极 金属并延伸到凹陷区域中。

公开(公告)号：US20200235028A1

公开(公告)日：2020-07-23

申请号：US16839964

申请日：2020-04-03

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyung Seok LEE ,  Zin-Sig KIM ,  Sung-Bum BAE

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/538 ,  H01L25/065

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a heat dissipation plate including a first region and a second region, a first element disposed on the heat dissipation plate in the first region, and a second element disposed on the heat dissipation plate in the second region. The first element includes a first substrate, the second element includes a second substrate, the first substrate includes a material different from a material of the second substrate, the first substrate contacts the heat dissipation plate, and the second element is bonded to the heat dissipation plate in a flip-chip bonding manner

公开(公告)号：US20190096782A1

公开(公告)日：2019-03-28

申请号：US16134286

申请日：2018-09-18

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyung Seok LEE ,  Zin-Sig KIM ,  Sung-Bum BAE

IPC: H01L23/367 ,  H01L25/065 ,  H01L29/20 ,  H01L23/538 ,  H01L23/373

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a heat dissipation plate including a first region and a second region, a first element disposed on the heat dissipation plate in the first region, and a second element disposed on the heat dissipation plate in the second region. The first element includes a first substrate, the second element includes a second substrate, the first substrate includes a material different from a material of the second substrate, the first substrate contacts the heat dissipation plate, and the second element is bonded to the heat dissipation plate in a flip-chip bonding manner.

公开(公告)号：US20170077282A1

公开(公告)日：2017-03-16

申请号：US15265647

申请日：2016-09-14

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyung Seok LEE ,  Ki Hwan KIM ,  Sang Choon KO ,  Zin-Sig KIM ,  Jeho NA ,  EUN SOO NAM ,  Young Rak PARK ,  Junbo PARK ,  Chi Hoon JUN ,  Dong Yun JUNG

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/402 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7786

Abstract: Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.

Abstract translation: 提供一种电子设备。 该电子器件包括依次堆叠在基板上的第一半导体层和第二半导体层以及设置在第二半导体层上的源电极，栅电极和漏电极。 电子装置还包括电场连接到源极并且朝向漏电极延伸的场板，其中当场板越靠近漏电极时，场板越靠近衬底。