公开(公告)号：US20160380119A1

公开(公告)日：2016-12-29

申请号：US15084874

申请日：2016-03-30

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Dong Yun JUNG ,  Hyun Soo LEE ,  Sang Choon KO ,  Jeong-Jin KIM ,  Zin-Sig KIM ,  Jeho NA ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Young Rak PARK ,  Sung-Bum BAE ,  Hyung Seok LEE ,  Woojin CHANG ,  Hyungyu JANG ,  Chi Hoon JUN

IPC分类号： H01L29/872 ,  H01L29/205 ,  H01L29/45 ,  H01L21/02 ,  H01L23/29 ,  H01L29/47 ,  H01L29/66 ,  H01L21/306 ,  H01L29/20 ,  H01L23/31

CPC分类号： H01L21/0228 ,  H01L23/291 ,  H01L23/3178 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66212 ,  H01L29/872

摘要： A first nitride semiconductor layer of a semiconductor device is provided on a substrate, a second nitride semiconductor layer is provided on the first nitride semiconductor layer, a first ohmic metal and a second ohmic metal are provided on the second nitride semiconductor layer, a recess region is provided in the second nitride semiconductor layer between the first ohmic metal and the second ohmic metal, a passivation layer covers side of the first ohmic metal and a bottom surface and sides of the recess region, and a Schottky electrode is provided on the first ohmic metal and extends into the recess region.

摘要翻译： 半导体器件的第一氮化物半导体层设置在衬底上，第二氮化物半导体层设置在第一氮化物半导体层上，第一欧姆金属和第二欧姆金属设置在第二氮化物半导体层上，凹部 在所述第一欧姆金属和所述第二欧姆金属之间的所述第二氮化物半导体层中设置钝化层，所述钝化层覆盖所述第一欧姆金属的一侧，并且所述钝化层覆盖所述凹部区域的底表面和所述侧面，并且所述第一欧姆金属的肖特基电极 金属并延伸到凹陷区域中。

公开(公告)号：US20150187599A1

公开(公告)日：2015-07-02

申请号：US14310784

申请日：2014-06-20

申请人： Electronics and Telecommunications Research Institute

发明人： Sang Choon KO ,  Jae Kyoung MUN ,  Woojin CHANG ,  Sung-Bum BAE ,  Young Rak PARK ,  Chi Hoon JUN ,  Seok-Hwan MOON ,  Woo-Young JANG ,  Jeong-Jin KIM ,  Hyungyu JANG ,  Je Ho NA ,  Eun Soo NAM

IPC分类号： H01L21/321 ,  H01L21/283 ,  H01L21/02

CPC分类号： H01L21/3212 ,  H01L21/0254 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786

摘要： Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.

摘要翻译： 提供一种制造氮化物半导体器件的方法。 该方法包括在生长衬底上形成多个电极，在其上依次层叠有第一和第二氮化物半导体层，分别在多个电极上形成上部金属层，去除生长衬底以暴露第一氮化物半导体层的下表面 并且在第一氮化物半导体层的暴露的下表面上顺序地形成第三氮化物半导体层和下金属层。

公开(公告)号：US20150129890A1

公开(公告)日：2015-05-14

申请号：US14583858

申请日：2014-12-29

申请人： Electronics and Telecommunications Research Institute

发明人： Hokyun AHN ,  Jong-Won LIM ,  Jeong-Jin KIM ,  Hae Cheon KIM ,  Jae Kyoung MUN ,  Eun Soo NAM

IPC分类号： H01L29/778 ,  H01L29/51 ,  H01L29/205 ,  H01L29/20 ,  H01L29/201

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/51 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7786

摘要： A field effect transistor includes an active layer and a capping layer sequentially stacked on a substrate, and a gate electrode penetrating the capping layer and being adjacent to the active layer. The gate electrode includes a foot portion adjacent to the active layer and a head portion having a width greater than a width of the foot portion. The foot portion of an end part of the gate electrode has a width less than a width of the head portion of another part of the gate electrode and greater than a width of the foot portion of the another part of the gate electrode. The foot portion of the end part of the gate electrode further penetrates the active layer so as to be adjacent to the substrate.

摘要翻译： 场效应晶体管包括依次层叠在基板上的有源层和覆盖层，以及贯穿封盖层并与活性层相邻的栅电极。 栅电极包括与有源层相邻的脚部和具有大于脚部的宽度的宽度的头部。 栅电极的端部的脚部的宽度小于栅电极的另一部分的头部的宽度，并且大于栅极的另一部分的脚部的宽度。 栅电极的端部的脚部进一步穿过有源层，以与衬底相邻。