公开(公告)号：US20160380119A1

公开(公告)日：2016-12-29

申请号：US15084874

申请日：2016-03-30

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Dong Yun JUNG ,  Hyun Soo LEE ,  Sang Choon KO ,  Jeong-Jin KIM ,  Zin-Sig KIM ,  Jeho NA ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Young Rak PARK ,  Sung-Bum BAE ,  Hyung Seok LEE ,  Woojin CHANG ,  Hyungyu JANG ,  Chi Hoon JUN

IPC: H01L29/872 ,  H01L29/205 ,  H01L29/45 ,  H01L21/02 ,  H01L23/29 ,  H01L29/47 ,  H01L29/66 ,  H01L21/306 ,  H01L29/20 ,  H01L23/31

CPC classification number: H01L21/0228 ,  H01L23/291 ,  H01L23/3178 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66212 ,  H01L29/872

Abstract: A first nitride semiconductor layer of a semiconductor device is provided on a substrate, a second nitride semiconductor layer is provided on the first nitride semiconductor layer, a first ohmic metal and a second ohmic metal are provided on the second nitride semiconductor layer, a recess region is provided in the second nitride semiconductor layer between the first ohmic metal and the second ohmic metal, a passivation layer covers side of the first ohmic metal and a bottom surface and sides of the recess region, and a Schottky electrode is provided on the first ohmic metal and extends into the recess region.

Abstract translation: 半导体器件的第一氮化物半导体层设置在衬底上，第二氮化物半导体层设置在第一氮化物半导体层上，第一欧姆金属和第二欧姆金属设置在第二氮化物半导体层上，凹部 在所述第一欧姆金属和所述第二欧姆金属之间的所述第二氮化物半导体层中设置钝化层，所述钝化层覆盖所述第一欧姆金属的一侧，并且所述钝化层覆盖所述凹部区域的底表面和所述侧面，并且所述第一欧姆金属的肖特基电极 金属并延伸到凹陷区域中。

公开(公告)号：US20150187599A1

公开(公告)日：2015-07-02

申请号：US14310784

申请日：2014-06-20

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang Choon KO ,  Jae Kyoung MUN ,  Woojin CHANG ,  Sung-Bum BAE ,  Young Rak PARK ,  Chi Hoon JUN ,  Seok-Hwan MOON ,  Woo-Young JANG ,  Jeong-Jin KIM ,  Hyungyu JANG ,  Je Ho NA ,  Eun Soo NAM

IPC: H01L21/321 ,  H01L21/283 ,  H01L21/02

CPC classification number: H01L21/3212 ,  H01L21/0254 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786

Abstract: Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.

Abstract translation: 提供一种制造氮化物半导体器件的方法。 该方法包括在生长衬底上形成多个电极，在其上依次层叠有第一和第二氮化物半导体层，分别在多个电极上形成上部金属层，去除生长衬底以暴露第一氮化物半导体层的下表面 并且在第一氮化物半导体层的暴露的下表面上顺序地形成第三氮化物半导体层和下金属层。