摘要:
A QFN package and method of making same is provided comprising a substrate having a metal line extending from a connection element on a perimeter region of the substrate to a high current contact pad on interior region of the substrate. A semiconductor chip having an active surface generally faces the interior region of the substrate, wherein a heat-dissipating patterned metal distribution layer is formed over the active surface and electrically connected to an active component thereon. A solder strip electrically and thermally connects the high current contact pad and the metal distribution layer, and a mold compound generally encapsulates the semiconductor chip. The solder strip is generally uniform in depth and surface area, wherein low electrical resistance and inductance is provided between the high current contact pad and the metal distribution layer. An integrated heat sink may be further formed or placed on a passive surface of the chip.
摘要:
A method for fabricating a low resistance, low inductance device for high current semiconductor flip-chip products. A structure is produced, which comprises a semiconductor chip with metallization traces, copper lines in contact with the traces, and copper bumps located in an orderly and repetitive arrangement on each line so that the bumps of one line are positioned about midway between the corresponding bumps of the neighboring lines. A substrate is provided which has elongated copper leads with first and second surfaces, the leads oriented at right angles to the lines. The first surface of each lead is connected to the corresponding bumps of alternating lines using solder elements. Finally, the assembly is encapsulated in molding compound so that the second lead surfaces remain un-encapsulated.
摘要:
Disclosed herein is a method of manufacturing a semiconductor package with a solder standoff on lead pads that reach to the edge of the package (non-pullback leads). It includes encapsulating a plurality of die on a lead frame strip. The lead frame strip comprises a plurality of package sites, which further comprises a plurality of lead pads and a die pad. The method also includes forming a channel between the lead pads of nearby package sites without singulating the packages. Another step in the method includes disposing solder on the lead pads, the die pad, or the lead pads and the die pads without substantially covering the channel with solder. The manufacturing method further includes singulating the packages.
摘要:
A high current semiconductor device (for example QFN for 30 to 70 A) with low resistance and low inductance is encapsulated by molding compound (401, height 402 about 0.9 mm) so that the second lead surfaces 110b remain un-encapsulated. A copper heat slug (404) may be attached to chip surface (101b) using thermally conductive adhesive (403). Chip surface (101a), protected by an overcoat (103) has metallization traces (102). Copper-filled windows (107) contact the traces and copper layers (105) parallel to traces (102). Copper bumps (108) are formed on each line in an orderly and repetitive arrangement so that the bumps of one line are positioned about midway between the bumps of the neighboring lines. A substrate has elongated leads (110) oriented at right angles to the lines; the leads connect the corresponding bumps of alternating lines.
摘要:
Disclosed herein is a method of manufacturing a semiconductor package with a solder standoff on lead pads that reach to the edge of the package (non-pullback leads). It includes encapsulating a plurality of die on a lead frame strip. The lead frame strip comprises a plurality of package sites, which further comprises a plurality of lead pads and a die pad. The method also includes forming a channel between the lead pads of nearby package sites without singulating the packages. Another step in the method includes disposing solder on the lead pads, the die pad, or the lead pads and the die pads without substantially covering the channel with solder. The manufacturing method further includes singulating the packages.
摘要:
An integrated circuit (IC) includes a substrate having a semiconducting surface, a first array of devices on and in the semiconducting surface including first and second coacting current conducting nodes, a plurality of layers disposed on the substrate and including at a electrically conductive layers and dielectric layer, and a plurality of bump pads on or in the top surface of the dielectric layers. In the IC, the electrically conductive layers define electrical traces, where a first portion of the electrical traces contact a first portion of the bump pads exclusively to a portion of the first coacting current conducting nodes, where a second portion of the electrical traces contact a second portion of the bump pads exclusively to a portion of the second coacting current conducting nodes, and where the electrical traces are electrically isolated from one another by the dielectric layers.
摘要:
A method for fabricating a low resistance, low inductance device for high current semiconductor flip-chip products. A structure is produced, which comprises a semiconductor chip with metallization traces, copper lines in contact with the traces, and copper bumps located in an orderly and repetitive arrangement on each line so that the bumps of one line are positioned about midway between the corresponding bumps of the neighboring lines. A substrate is provided which has elongated copper leads with first and second surfaces, the leads oriented at right angles to the lines. The first surface of each lead is connected to the corresponding bumps of alternating lines using solder elements. Finally, the assembly is encapsulated in molding compound so that the second lead surfaces remain un-encapsulated.
摘要:
A semiconductor device comprising a leadframe (903), which has first (903a) and second (903b) surfaces, a planar pad (910) of a certain size, and a plurality of non-coplanar members (913) adjoining the pad. The device further has a heat spreader (920) with first (920a) and second (920b) surfaces, a planar pad of a size matching the leadframe pad size, and contours (922), into which the leadframe members are inserted so that the first spreader pad surface touches the second leadframe pad surface across the pad size. A semiconductor chip (904) is mounted on the first leadframe pad surface. Encapsulation material (930), preferably molding compound, covers the chip, but leaves the second spreader surface uncovered.
摘要:
A device (100) and method (200) for bonding a ribbon wire (104) to a workpiece (106) comprising feeding the ribbon wire through a passageway (116) of an ultrasonic bond capillary (102) and clamping the ribbon wire against an engagement surface (120) of the bond capillary via a clamping jaw (118) operably coupled to the bond capillary. The ribbon wire (104) is bonded to the workpiece (106) along a bonding surface (112) of the bond capillary (102) and penetrated, at least partially, between the bonding surface and the engagement surface (120) of the bond capillary by a cutting tool (124). The cutting tool (124) may comprise an elongate member (126) positioned between the bonding surface (112) and engagement surface (120), and may have a cutting blade (128) positioned at a distal end (130) thereof. The cutting tool (124) may further comprise a ring cutter (132), wherein the ribbon wire passes through a ring (134) having a cutting surface (138) defined about an inner diameter thereof.
摘要:
In a method and system for fabricating a leadframe (100), a thickness of bondable areas (150, 152 and 154) of the leadframe (100) is reduced. A plating finish (160) is applied to a surface of the leadframe (100), including the surface of the bondable areas (150, 152 and 154) to provide a smooth texture. A selective portion (102) of the surface is removed by grinding off the plating finish (160) on the selective portion (102) to provide a rough texture while substantially preserving the smooth texture on the bondable areas (150, 152 and 154). Removal of the plating finish (160) on the selective portion (102) causes the selective portion (102) to form the rough texture, compared to the smooth texture of the plating finish (160). The rough texture provides increased adhesion to a polymeric compound compared to an adhesion provided by the smooth texture. Bondability of the bondable areas (150, 152 and 154) is maintained by preserving the smooth texture of the plating finish (160).