Abstract:
The present disclosure relates to a semiconductor device package comprising a substrate, a semiconductor device, and a underfill. The substrate includes a top surface defining a mounting area, and a barrier section on the top surface and adjacent to the mounting area. The semiconductor device is mounted on the mounting area of the substrate. The underfill is disposed between the semiconductor device and the mounting area and the barrier section of the substrate. A contact angle between a surface of the underfill and the barrier section is greater than or equal to about 90 degrees.
Abstract:
A semiconductor device includes a semiconductor element, a trace disposed adjacent to a surface of the semiconductor element, a bonding pad disposed adjacent to the surface of the semiconductor element and connected to the trace, and a pillar disposed on the bonding pad. The pillar includes a first end wall, a second end wall opposite the first end wall, a first side wall, and a second side wall opposite the first side wall. The first side wall and the second side wall connect the first end wall to the second end wall. One or both of the first side wall and the second side wall incline inwardly from the first end wall to the second end wall. The pillar is disposed on the bonding pad such that the first end wall is closer to the trace than is the second end wall.
Abstract:
A substrate including a dielectric layer and a patterned conductive layer adjacent to the dielectric layer is provided. The patterned conductive layer comprises a first conductive pad, the first conductive pad comprises a first portion having a first concave sidewall. The substrate further includes a protection layer disposed on the patterned conductive layer, and the protection layer covers the first portion of the first conductive pad.
Abstract:
The present disclosure relates to a semiconductor package structure and a method for manufacturing the same. The semiconductor package structure includes a leadframe and a semiconductor die. The leadframe includes a main portion and a protrusion portion. The semiconductor die is bonded to a first surface of the main portion. The protrusion portion protrudes from a second surface of the main portion. The position of the protrusion portion corresponds to the position of the semiconductor die.
Abstract:
A semiconductor device package includes a package substrate, a first electronic device, a second electronic device and a first molding layer. The package substrate includes a first surface, a second surface opposite to the first surface, and an edge. The first electronic device is positioned over and electrically connected to the package substrate through the first surface. The second electronic device is positioned over and electrically connected to the first electronic device. The first molding layer is positioned over the package substrate, and the first molding layer encapsulates a portion of the first surface and the edge of the package substrate.
Abstract:
The present disclosure relates to bump structures and a semiconductor device and semiconductor device package having the same. The semiconductor device includes a body, at least one conductive metal pad and at least one metal pillar. The body includes a first surface. The at least one conductive metal pad is disposed on the first surface. Each metal pillar is formed on a corresponding conductive metal pad. Each metal pillar has a concave side wall and a convex side wall opposite the first concave side wall, and the concave side wall and the convex side wall are orthogonal to the corresponding conductive metal pad.
Abstract:
A semiconductor package includes a filler composition, wherein the filler composition includes particles each including both carbon and silica, wherein the filler composition is substantially devoid of alumina or silicon carbide, and the filler composition has a weight ratio of carbon to silica of at least greater than 1.0.
Abstract:
A semiconductor device includes a semiconductor element, a trace disposed adjacent to a surface of the semiconductor element, a bonding pad disposed adjacent to the surface of the semiconductor element and connected to the trace, and a pillar disposed on the bonding pad. The pillar includes a first end wall, a second end wall opposite the first end wall, a first side wall, and a second side wall opposite the first side wall. The first side wall and the second side wall connect the first end wall to the second end wall. One or both of the first side wall and the second side wall incline inwardly from the first end wall to the second end wall. The pillar is disposed on the bonding pad such that the first end wall is closer to the trace than is the second end wall.
Abstract:
A semiconductor package structure includes a substrate, a semiconductor element, an encapsulant, an adhesion layer and a metal cap. The semiconductor element is disposed on the substrate. The encapsulant covers the semiconductor element. The adhesion layer is disposed on the encapsulant. The metal cap is attached to the encapsulant by the adhesion layer, and the metal cap is conformal with the encapsulant.