公开(公告)号：US5363278A

公开(公告)日：1994-11-08

申请号：US889384

申请日：1992-05-28

申请人： Hiroshi Komorita ,  Nobuyuki Mizunoya

发明人： Hiroshi Komorita ,  Nobuyuki Mizunoya

IPC分类号： C04B41/88 ,  C22C9/00 ,  H01L21/48 ,  H01L23/12 ,  H01L23/498 ,  H05K1/03 ,  H05K1/09 ,  H05K3/38 ,  H05K1/18 ,  H05K7/02

CPC分类号： H01L23/49866 ,  H01L21/4839 ,  H05K3/38 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/19041 ,  H05K1/0306 ,  H05K2201/0355

摘要： A bonded ceramic-metal composite substrate comprising a ceramic substrate having opposite surfaces and a copper sheet having a face directly bonded to one of the surfaces of the ceramic substrate, characterized in that the Vickers hardness of the copper sheet lies in the range from 40 kg/mm.sup.2 to 100 kg/mm.sup.2.

摘要翻译： 1.一种粘结陶瓷 - 金属复合基板，其特征在于，包括具有相对表面的陶瓷基板和具有与陶瓷基板的一个表面直接接合的面的铜板，其特征在于，所述铜板的维氏硬度处于40kg / mm2〜100kg / mm2。

公开(公告)号：US4959507A

公开(公告)日：1990-09-25

申请号：US342843

申请日：1989-04-25

申请人： Tadashi Tanaka ,  Kazuo Matsumura ,  Hiroshi Komorita ,  Nobuyuki Mizunoya

发明人： Tadashi Tanaka ,  Kazuo Matsumura ,  Hiroshi Komorita ,  Nobuyuki Mizunoya

IPC分类号： H01B5/14 ,  H01L21/48 ,  H01L23/373 ,  H01L23/498 ,  H05K1/03 ,  H05K1/09 ,  H05K3/38

CPC分类号： H01L23/3735 ,  H01L21/4839 ,  H01L23/49866 ,  H05K3/38 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/19041 ,  H05K1/0306 ,  H05K2201/0355 ,  H05K2201/09118 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T428/12472 ,  Y10T428/12993

摘要： A bonded ceramic-metal composite substrate comprising a ceramic substrate having opposite surfaces and a copper sheet having a face directly bonded to one of the surfaces of the ceramic substrate, wherein the median surface roughness (R.sub.a) of the outer surface of the copper sheet is not greater than 3 .mu.m, and the maximum surface roughness (R.sub.max) of the outer surface of the copper sheet is not greater than 18 .mu.m. The invention improves the manufacturing reliability of various electronic devices such as semiconductor modules.

公开(公告)号：US4883704A

公开(公告)日：1989-11-28

申请号：US174902

申请日：1988-03-29

申请人： Hideki Sato ,  Nobuyuki Mizunoya ,  Hironori Asai ,  Kazuo Anzai ,  Tsuyoshi Hatano

发明人： Hideki Sato ,  Nobuyuki Mizunoya ,  Hironori Asai ,  Kazuo Anzai ,  Tsuyoshi Hatano

IPC分类号： C04B35/581 ,  C04B41/51 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  H01L21/48 ,  H01L23/15 ,  H01L23/498 ,  H05K1/09 ,  H05K3/38

CPC分类号： C04B41/009 ,  C04B35/581 ,  C04B41/5133 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  H01L21/4867 ,  H01L23/15 ,  H01L23/49866 ,  H05K1/0306 ,  C04B2111/00844 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/092 ,  H05K3/38 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： One aspect of the present invention is directed to an aluminum nitride ceramic substrate which comprises an aluminum nitride ceramic sheet and a conductive metallized layer formed thereon. The metallized layer comprises molybdenum and/or tungsten and contains a compound containing yttria and alumina in the vicinity of the interface between the aluminum nitride ceramic sintered sheet and the conductive metallized layer.

公开(公告)号：US5744410A

公开(公告)日：1998-04-28

申请号：US700358

申请日：1996-10-04

申请人： Michiyasu Komatsu ,  Kazuo Ikeda ,  Nobuyuki Mizunoya ,  Yoshitoshi Sato ,  Tatsuya Imaizumi ,  Kazuyuki Kondo

发明人： Michiyasu Komatsu ,  Kazuo Ikeda ,  Nobuyuki Mizunoya ,  Yoshitoshi Sato ,  Tatsuya Imaizumi ,  Kazuyuki Kondo

IPC分类号： C04B35/584 ,  C04B35/593 ,  H01L23/15

CPC分类号： H01L24/33 ,  C04B35/584 ,  C04B35/5935 ,  H01L23/15 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01064 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01105 ,  H01L2924/04953 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025

摘要： A high thermal conductive silicon nitride sintered body of this invention is characterized by containing more than 7.5 wt % to at most 17.5 wt % of a rare earth element in terms of the amount of an oxide thereof, if necessary, at most 1.0 wt % of at least one of aluminum nitride and alumina, if necessary, 0.1-3.0 wt % of at least one compound selected from the group consisting of oxides, carbides, nitrides, silicides and borides of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W, and at most 0.3 wt % of Li, Na, K, Fe, Ca, Mg, Sr, Ba, Mn and B as impurity cationic elements in terms of total amount thereof, containing a .beta.-type silicon nitride crystal and a grain boundary phase. The sintered body has a ratio of a crystal compound phase in the grain boundary phase to the entire grain boundary phase of at least 20%, a porosity of at most 2.5% by volume, a thermal conductivity of at least 80 W/m.multidot.K and a three-point bending strength of at least 650 MPa at a room temperature.

摘要翻译： PCT No.PCT / JP96 / 01559 Sec。 371日期：1996年10月4日 102（e）日期1996年10月4日PCT PCT 1996年6月7日PCT公布。 出版物WO97 / 00837 日本1997年1月9日本发明的高导热性氮化硅烧结体的特征在于，如果需要，以其氧化物的量含有大于7.5重量％至最多17.5重量％的稀土元素，如果需要， 大多数1.0重量％的氮化铝和氧化铝中的至少一种，如果需要，0.1-3.0重量％的选自Ti，Zr，Hf，V的氧化物，碳化物，氮化物，硅化物和硼化物中的至少一种化合物 ，Nb，Ta，Cr，Mo和W以及0.3重量％以下的Li，Na，K，Fe，Ca，Mg，Sr，Ba，Mn和B作为杂质阳离子元素， β型氮化硅晶体和晶界相。 所述烧结体的晶界相与晶界相的结晶化合物相的比例为至少20％，孔隙率为2.5体积％以下，导热系数为80W / m×K以上， 在室温下三点弯曲强度至少为650MPa。

公开(公告)号：US5328751A

公开(公告)日：1994-07-12

申请号：US911713

申请日：1992-07-10

申请人： Hiroshi Komorita ,  Nobuyuki Mizunoya ,  Kazuo Matsumura ,  Kazuo Ikeda ,  Takayuki Naba ,  Tadashi Tanaka

发明人： Hiroshi Komorita ,  Nobuyuki Mizunoya ,  Kazuo Matsumura ,  Kazuo Ikeda ,  Takayuki Naba ,  Tadashi Tanaka

IPC分类号： H01L23/498 ,  H05K1/02 ,  H05K1/03 ,  H05K3/38 ,  H05K3/40 ,  B32B9/00

CPC分类号： H01L23/49861 ,  H05K1/0271 ,  H05K3/4092 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01004 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/19107 ,  H05K1/0306 ,  H05K2201/0355 ,  H05K2201/098 ,  H05K3/38 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： This invention provides a ceramic circuit board comprising: a ceramic base board; a metal circuit plate integrally bonded onto a surface of the ceramic base board; a terminal connecting port formed by bending a part of the metal circuit plate for connecting a terminal of a module, the terminal connecting port being formed so that the terminal connecting port is raised from a surface of the ceramic base board, and a curvature radius of the bent portion provided on the terminal connecting port is set to 0.2 mm or more. An empty communication hole such as groove or through hole may also be formed at a bonding surface between the metal circuit plate and the ceramic base board.

摘要翻译： 本发明提供一种陶瓷电路板，包括：陶瓷基板; 一体地结合到陶瓷基板的表面上的金属电路板; 端子连接端口，其通过弯曲用于连接模块的端子的金属电路板的一部分而形成，所述端子连接端口形成为使得端子连接端口从陶瓷基板的表面升高，并且曲率半径 设置在端子连接口上的弯曲部分设定为0.2mm以上。 还可以在金属电路板和陶瓷基板之间的接合表面上形成诸如槽或通孔的空的连通孔。

公开(公告)号：US4849292A

公开(公告)日：1989-07-18

申请号：US41335

申请日：1987-04-22

申请人： Nobuyuki Mizunoya ,  Hajime Kohama ,  Yasuyuki Sugiura

发明人： Nobuyuki Mizunoya ,  Hajime Kohama ,  Yasuyuki Sugiura

IPC分类号： B32B15/04 ,  C04B37/02 ,  H01L21/48 ,  H01L23/15 ,  H05K1/03 ,  H05K3/38

CPC分类号： C04B37/025 ,  B32B15/04 ,  C04B37/021 ,  H01L21/4807 ,  H01L23/15 ,  C04B2237/06 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/34 ,  C04B2237/341 ,  C04B2237/348 ,  C04B2237/36 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/403 ,  C04B2237/406 ,  C04B2237/407 ,  C04B2237/54 ,  C04B2237/708 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K3/38 ,  Y10S228/903

摘要： A laminated body comprising a ceramic member and a metal member, and a method of forming the laminated body are described. The laminated body is characterized in that the ceramic member contains in its surface portion a bonding agent and the metal member is directly bonded to the surface of the ceramic member. The method of forming the laminated body is characterized in that a bonding agent-containing layer is first formed in the surface of the ceramic member and then the bonding agent-containing layer is heated while being contacted with the metal member.

公开(公告)号：US06284985B1

公开(公告)日：2001-09-04

申请号：US09534319

申请日：2000-03-24

申请人： Takayuki Naba ,  Nobuyuki Mizunoya

发明人： Takayuki Naba ,  Nobuyuki Mizunoya

IPC分类号： H05K100

CPC分类号： H01L23/3735 ,  C04B35/6365 ,  C04B37/026 ,  C04B2235/96 ,  C04B2237/122 ,  C04B2237/125 ,  C04B2237/343 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/405 ,  C04B2237/52 ,  C04B2237/525 ,  C04B2237/706 ,  H01L24/32 ,  H01L2224/27013 ,  H01L2224/32 ,  H01L2924/01322 ,  H01L2924/15787 ,  H01L2924/351 ,  H05K1/0306 ,  H05K1/111 ,  H05K3/341 ,  H05K3/38 ,  H05K3/4092 ,  H05K3/4629 ,  H05K2201/0355 ,  H05K2201/0382 ,  Y02P70/611 ,  Y10T29/49124 ,  H01L2924/00

摘要： The present invention provides a ceramic circuit board including: a ceramic substrate; a plurality of metal circuit plates bonded to a surface of the ceramic substrate; and parts including semiconductor element integrally bonded to a surface of the metal circuit plates through a solder layer, wherein at least peripheral portion of one metal metal circuit plate to which the parts are solder-bonded and is adjacent to the other metal circuit plates is formed with a projection for preventing solder-flow. According to the structure described above, there can be provided a ceramic circuit board which is free from short-circuit due to the solder-flow or bonding defects of the parts thereby to have an excellent operating reliability, and is capable of being easily mass-produced with a high production yield.

摘要翻译： 本发明提供一种陶瓷电路板，包括：陶瓷基板; 多个金属电路板，其与所述陶瓷基板的表面接合; 以及包括半导体元件的部件，其通过焊料层一体地结合到金属电路板的表面，其中形成有一部分被焊接并与其它金属电路板相邻的金属金属电路板的至少周边部分 具有用于防止焊料流动的突起。 根据上述结构，可以提供一种陶瓷电路板，其由于焊料流动或部件的接合缺陷而没有短路，因此具有优异的操作可靠性，并且能够容易地进行质量 - 产量高，产量高。

公开(公告)号：US5998000A

公开(公告)日：1999-12-07

申请号：US970813

申请日：1997-11-14

申请人： Kazuo Ikeda ,  Hiroshi Komorita ,  Yoshitoshi Sato ,  Michiyasu Komatsu ,  Nobuyuki Mizunoya

发明人： Kazuo Ikeda ,  Hiroshi Komorita ,  Yoshitoshi Sato ,  Michiyasu Komatsu ,  Nobuyuki Mizunoya

IPC分类号： H01L21/66 ,  H01L23/15 ,  H01L23/373 ,  B32B3/27

CPC分类号： H01L23/3735 ,  C04B35/5935 ,  C04B37/021 ,  C04B37/026 ,  H01L23/15 ,  C04B2235/5445 ,  C04B2235/6565 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2237/122 ,  C04B2237/368 ,  C04B2237/407 ,  C04B2237/70 ,  H01L22/12 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/83455 ,  H01L2924/01322 ,  H01L2924/10253 ,  Y10T428/24917 ,  Y10T428/24926

摘要： This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.s of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.s .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.

摘要翻译： 本发明提供了一种氮化硅电路板，其中金属电路板结合到导热率不小于60W / m K的高导热氮化硅衬底上，其中高导热氮化硅衬底的厚度Ds 并且金属电路板的厚度DM满足关系式Ds 2DM。 氮化硅电路板的特征在于，当负载作用在保持在50mm的支撑间隔的电路板的中心部分时，直到氮化硅衬底断裂为止，最大偏转不小于0.6mm。 氮化硅电路板的特征在于，当对以50mm的支撑间隔保持的电路板进行防破坏试验时，抗断强度不低于500MPa。 金属电路板或电路层通过直接接合法，活性金属钎焊法或金属化法一体接合在氮化硅衬底上。 根据具有上述结构的氮化硅电路板，可以获得高导热性和优异的散热特性，并且可以显着提高热循环电阻特性。

公开(公告)号：US5928768A

公开(公告)日：1999-07-27

申请号：US666467

申请日：1996-09-04

申请人： Kazuo Ikeda ,  Hiroshi Komorita ,  Yoshitoshi Sato ,  Michiyasu Komatsu ,  Nobuyuki Mizunoya

发明人： Kazuo Ikeda ,  Hiroshi Komorita ,  Yoshitoshi Sato ,  Michiyasu Komatsu ,  Nobuyuki Mizunoya

IPC分类号： H01L21/66 ,  H01L23/15 ,  H01L23/373 ,  B32B9/00

CPC分类号： H01L23/3735 ,  C04B35/5935 ,  C04B37/021 ,  C04B37/026 ,  H01L23/15 ,  C04B2235/5445 ,  C04B2235/6565 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2237/122 ,  C04B2237/368 ,  C04B2237/407 ,  C04B2237/70 ,  H01L22/12 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/83455 ,  H01L2924/01322 ,  H01L2924/10253 ,  Y10T428/24917 ,  Y10T428/24926

摘要： This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.s of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.s .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.

摘要翻译： PCT No.PCT / JP96 / 00723 Sec。 371日期1996年9月4日 102（e）1996年9月4日PCT PCT 1996年3月19日PCT公布。 WO96 / 29736 PCT公开号 日期1996年9月26日本发明提供了一种氮化硅电路板，其中金属电路板结合到导热率不小于60W / m K的高导热氮化硅衬底上，其中高的 导热氮化硅衬底和金属电路板的厚度DM满足关系式Ds 2DM。 氮化硅电路板的特征在于，当负载作用在保持在50mm的支撑间隔的电路板的中心部分时，直到氮化硅衬底断裂为止，最大偏转不小于0.6mm。 氮化硅电路板的特征在于，当对以50mm的支撑间隔保持的电路板进行防破坏试验时，抗断强度不低于500MPa。 金属电路板或电路层通过直接接合法，活性金属钎焊法或金属化法一体接合在氮化硅衬底上。 根据具有上述结构的氮化硅电路板，可以获得高导热性和优异的散热特性，并且可以显着提高热循环电阻特性。

公开(公告)号：US4987677A

公开(公告)日：1991-01-29

申请号：US484875

申请日：1990-02-26

申请人： Tadashi Tanaka ,  Kazuo Matsumura ,  Hiroshi Komorita ,  Nobuyuki Mizunoya

发明人： Tadashi Tanaka ,  Kazuo Matsumura ,  Hiroshi Komorita ,  Nobuyuki Mizunoya

IPC分类号： H01B5/14 ,  H01L21/48 ,  H01L23/373 ,  H01L23/498 ,  H05K1/03 ,  H05K1/09 ,  H05K3/38

CPC分类号： H01L23/3735 ,  H01L21/4839 ,  H01L23/49866 ,  H05K3/38 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/19041 ,  H05K1/0306 ,  H05K2201/0355 ,  H05K2201/09118 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T428/12472 ,  Y10T428/12993

摘要： A bonded ceramic-metal composite substrate comprising a ceramic substrate having opposite surfaces and a copper sheet having a face directly bonded to one of the surfaces of the ceramic substrate, wherein the median surface roughness (R.sub.a) of the outer surface of the copper sheet is not greater than 3 .mu.m, and the maximum surface roughness (R.sub.max) of the outer surface of the copper sheet is not greater than 18 .mu.m. The invention improves the manufacturing reliability of various electronic devices such as semiconductor modules.