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1.发明授权公开(公告)号：US06917492B2
公开(公告)日：2005-07-12
申请号：US10611224
申请日：2003-06-27
Applicant: Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
Inventor： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
CPC classification number: H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F41/307 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T29/49034
Abstract: A magnetoresistive element includes a pair of ferromagnetic layers and a non-magnetic layer arranged between the ferromagnetic layers. At least one of the ferromagnetic layers has a composition expressed by (MxLy)100-zRz at the interface with the non-magnetic layer. The non-magnetic layer includes at least one element selected from the group consisting of B, C, N, O, and P. Here, M is FeaCobNic, L is at least one element selected from the group consisting of Pt, Pd, Ir, and Rh, R is an element that has a lower free energy to form a compound with the element of the non-magnetic layer that is at least one selected from the group consisting of B, C, N, O, and P than does any other element included in the composition as M or L, and a, b, c, x, y, and z satisfy a+b+c=100, a≧30, x+y=100, 0
Abstract translation: 磁阻元件包括一对铁磁层和布置在铁磁层之间的非磁性层。 铁磁层中的至少一个具有由（M×××××××××××××××××××××××××××composition composition z SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB >在与非磁性层的界面处。 非磁性层包括选自B，C，N，O和P中的至少一种元素。这里，M是Fe L是选自Pt，Pd，Ir和Rh中的至少一种元素，R是具有较低自由能以与非金属元素形成化合物的元素， 磁性层是选自B，C，N，O和P中的至少一种，除了组合物中包含的任何其它元素为M或L，以及a，b，c，x，y和 z满足a + b + c = 100，a> = 30，x + y = 100,0
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2.发明授权公开(公告)号：US06686071B2
公开(公告)日：2004-02-03
申请号：US09873753
申请日：2001-06-04
Applicant: Hiroshi Sakakima , Hideaki Adachi , Mitsuo Satomi , Yasuhiro Kawawake , Yasunari Sugita , Kenji Iijima
Inventor： Hiroshi Sakakima , Hideaki Adachi , Mitsuo Satomi , Yasuhiro Kawawake , Yasunari Sugita , Kenji Iijima
IPC: G11B566
CPC classification number: G11B5/66 , G11B5/82 , G11B2005/0002 , G11B2005/001 , Y10S428/90 , Y10T428/115 , Y10T428/12465
Abstract: A magnetic recording medium includes a magnetic film for signal recording and a film containing M2Oy as a main component that is magnetically exchange-coupled to the magnetic film to increase the effective V and Ku of the magnetic film and to suppress thermal fluctuation. Herein, M is at least one element selected from Fe, Co, Ni, alkaline earth elements, Y, lanthanoids and Bi and includes at least one selected from Fe, Co and Ni as an essential element, and y is a value satisfying 2.8
Abstract translation: 磁记录介质包括用于信号记录的磁性膜和含有M 2 O y作为主要成分的膜，该膜与磁性膜磁交换耦合，以增加磁性膜的有效V和Ku并抑制热波动。 这里，M是选自Fe，Co，Ni，碱土金属元素，Y，镧系元素和Bi中的至少一种元素，并且包括选自Fe，Co和Ni中的至少一种作为必需元素，y是满足2.8 < Y <3.2。
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3.发明授权Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film 有权交换耦合膜，磁阻效应器件，磁阻有效头和用于生产交换耦合膜的方法公开(公告)号：US06562486B2
公开(公告)日：2003-05-13
申请号：US09834716
申请日：2001-04-13
Applicant: Hiroshi Sakakima , Eiichi Hirota , Yasuhiro Kawawake , Mitsuo Satomi , Yasunari Sugita
Inventor： Hiroshi Sakakima , Eiichi Hirota , Yasuhiro Kawawake , Mitsuo Satomi , Yasunari Sugita
IPC: G11B539
CPC classification number: B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
Abstract: An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8
Abstract translation: 本发明的交换耦合膜包括铁磁层和钉扎层，该钉扎层与铁磁层接触以固定铁磁层的磁化方向，钉扎层包括（AB）2Ox层，其中：O表示 氧原子; 2.8
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4.发明授权公开(公告)号：US06256222B1
公开(公告)日：2001-07-03
申请号：US09612805
申请日：2000-07-10
Applicant: Hiroshi Sakakima , Yousuke Irie , Mitsuo Satomi , Yasuhiro Kawawake
Inventor： Hiroshi Sakakima , Yousuke Irie , Mitsuo Satomi , Yasuhiro Kawawake
IPC: G11C1100
CPC classification number: H03F7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3925 , G11B2005/3996 , G11C11/16 , G11C11/5607 , G11C2211/5616 , H01L27/222 , H01L43/10
Abstract: A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
Abstract translation: 本发明的磁阻效应器件包括：衬底; 以及形成在基板上的多层结构。 多层结构包括硬磁膜，软磁膜和用于从硬磁膜分离硬磁膜的非磁性金属膜。 硬磁性膜的磁化曲线具有良好的正方形特征，硬磁性膜的磁化容易轴的方向基本上与要检测的磁场的方向一致。
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公开(公告)号：US06198610B1
公开(公告)日：2001-03-06
申请号：US09477989
申请日：2000-01-05
Applicant: Yasuhiro Kawawake , Mitsuo Satomi , Hiroshi Sakakima
Inventor： Yasuhiro Kawawake , Mitsuo Satomi , Hiroshi Sakakima
IPC: G11B539
CPC classification number: B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/39 , G11B5/3903 , G11B2005/3996 , H01F10/3204 , H01F10/3268 , H01L43/08
Abstract: A magnetoresistive device of the present invention includes: a soft magnetic layer; a hard magnetic layer; a non-magnetic layer formed between the soft magnetic layer and the hard magnetic layer; and an interface magnetic layer, provided at an interface between the soft magnetic layer and the non-magnetic layer, for enhancing magnetic scattering, wherein the soft magnetic layer includes an amorphous structure.
Abstract translation: 本发明的磁阻装置包括：软磁性层; 硬磁层; 形成在软磁性层和硬磁性层之间的非磁性层; 以及设置在所述软磁性层和所述非磁性层之间的界面处的用于增强磁散射的界面磁性层，其中所述软磁性层包括无定形结构。
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Patent Agency Ranking6.发明授权
公开(公告)号：US6077618A
公开(公告)日：2000-06-20
申请号：US983514
申请日：1998-01-28
Applicant: Hiroshi Sakakima , Mitsuo Satomi , Shinji Nagamachi , Masahiro Ueda
Inventor： Hiroshi Sakakima , Mitsuo Satomi , Shinji Nagamachi , Masahiro Ueda
CPC classification number: G11B5/48 , G11C11/15 , H01L43/08 , Y10T428/1143
Abstract: A magnetoresistance effect element, a head of the magnetoresistance effect type and a memory element in each of which a larger MR change can be acquired in a smaller magnetic field, and a method of producing the magnetoresistance effect element. In a magnetoresistance effect element, the basic structure comprises a lamination body of a magnetic layer/a nonmagnetic insulating layer/a magnetic layer, and a nonmagnetic insulating layer has, at an exposed part thereof, a conductive portion sufficiently smaller than the contact portion of the nonmagnetic insulating layer with respect to the magnetic layers, the conductive portion electrically connecting the magnetic layer to each other. Electrode lead portions are disposed at the upper and lower magnetic layers. In the lamination body, there may be formed, in the nonmagnetic insulating layer, a column-like conductive portion which is sufficiently smaller than the contact portion of the nonmagnetic insulating layer with respect to the magnetic layers. The nonmagnetic insulting layer may be formed of an oxide or nitride of a conductive material, and the conductive portion may be lower in oxide concentration or nitride concentration than the nonmagnetic insulating layer. Further, the basic structure may include a lamination body consisting of a conductive magnetization-reversal restraining layer/a magnetic layer/a nonmagnetic insulating layer/a magnetic layer in which the conductive magnetization-reversal restraining layer is formed on the surface of one of the magnetic layers for restraining the one magnetic layer from being reversed in magnetization direction.
Abstract translation: PCT No.PCT / JP97 / 01830 Sec。 371日期1998年1月28日 102（e）日期1998年1月28日PCT提交1997年5月28日PCT公布。 公开号WO97 / 45883 日期1997年12月4日磁阻效应元件，磁阻效应类型的磁头和存储元件，其中每个磁能效应元件可以在较小的磁场中获得较大的MR变化，以及制造磁阻效应元件的方法。 在磁电阻效应元件中，基本结构包括磁性层/非磁性绝缘层/磁性层的层压体，非磁性绝缘层在其暴露部分具有足够小于 所述非磁性绝缘层相对于所述磁性层，所述导电部将所述磁性层彼此电连接。 电极引线部设置在上下磁性层。 在层叠体中，可以在非磁性绝缘层中形成比非磁性绝缘层相对于磁性层的接触部充分小的列状导体部。 非磁性绝缘层可以由导电材料的氧化物或氮化物形成，并且导电部分的氧化物浓度或氮化物浓度可以低于非磁性绝缘层。 此外，基本结构可以包括由导电磁化反转抑制层/磁性层/非磁性绝缘层/磁性层构成的层叠体，其中导电磁化反转抑制层形成在其中的一个的表面上 用于限制一个磁性层在磁化方向上反转的磁性层。
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公开(公告)号：US06005798A
公开(公告)日：1999-12-21
申请号：US120690
申请日：1998-07-22
Applicant: Hiroshi Sakakima , Yousuke Irie , Mitsuo Satomi , Yasuhiro Kawawake
Inventor： Hiroshi Sakakima , Yousuke Irie , Mitsuo Satomi , Yasuhiro Kawawake
IPC: G01R33/09 , G06K19/06 , G11B5/39 , G11C11/14 , G11C11/15 , G11C11/16 , G11C11/56 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/14 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/10 , H03F7/02 , H03F15/00 , G11C11/00
CPC classification number: H03F7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11C11/15 , G11C11/16 , G11C11/5607 , H01F10/3281 , H01L27/222 , H01L43/10 , G11B2005/3996 , G11B5/3925 , G11C2211/5616
Abstract: A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
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公开(公告)号：US5637392A
公开(公告)日：1997-06-10
申请号：US31726
申请日：1993-03-15
Applicant: Hiroshi Sakakima , Mitsuo Satomi , Hiroshi Takeuchi
Inventor： Hiroshi Sakakima , Mitsuo Satomi , Hiroshi Takeuchi
CPC classification number: B82Y25/00 , G01R33/093 , Y10S428/90 , Y10T428/1129 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/265
Abstract: Disclosed is a magneto-resistance effect element indicating a larger magneto-resistance effect at room temperature under impression of low magnetic field is obtained with the construction wherein the characteristics of artificial metallic lattice membrane are exploited.
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公开(公告)号：US5183631A
公开(公告)日：1993-02-02
申请号：US535080
申请日：1990-06-08
Applicant: Koichi Kugimiya , Yasuhiro Sugaya , Osamu Inoue , Mitsuo Satomi , Ken Hirota
Inventor： Koichi Kugimiya , Yasuhiro Sugaya , Osamu Inoue , Mitsuo Satomi , Ken Hirota
IPC: C22C32/00 , B22F1/02 , B22F3/00 , B22F3/14 , C04B35/74 , C22C1/04 , C22C1/10 , C22C33/02 , C22C38/00 , H01F1/24
CPC classification number: H01F1/24 , B22F1/02 , C04B35/74 , Y10T428/256 , Y10T428/257 , Y10T428/2991
Abstract: A composite material is provided which includes a discrete phase including grains made of a first substance; and a continuous phase including a thin coating film made of a second substance and formed on the surface of each of the grains. The thin coating film has a mean thickness smaller than the mean particle size of the grains. The grains are separated substantially from each other by the thin coating film. The porosity of the composite material is 5% or less.
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公开(公告)号：US5049209A
公开(公告)日：1991-09-17
申请号：US445105
申请日：1989-12-07
Applicant: Hiroshi Sakakima , Koichi Osano , Yuji Omata , Mitsuo Satomi , Koichi Kugimiya
Inventor： Hiroshi Sakakima , Koichi Osano , Yuji Omata , Mitsuo Satomi , Koichi Kugimiya
CPC classification number: B82Y25/00 , H01F10/13 , H01F10/32 , Y10T428/12431 , Y10T428/12465 , Y10T428/12632 , Y10T428/12931
Abstract: The disclosed magnetic nitride T-M-N film (T is at least one metal selected from the group consisting of Fe, Co, Ni and Mn; M is at least one metal selected from the group consisting of Nb, Zr, Ti, Ta, Hf, Cr, W and Mo; N is nitrogen (N)) has excellent wear resistance and high electric resistivity, and the compositionally modulated nitride film shows a soft magnetic property, as well as thermal stability of the properties.
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