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公开(公告)号：US20180366516A1
公开(公告)日：2018-12-20
申请号：US16112125
申请日：2018-08-24
Applicant: Micron Technology, Inc.
Inventor： Wayne I. Kinney , Witold Kula , Stephen J. Kramer
CPC classification number: H01L27/222 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3218 , H01F10/329 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random-access memory (STT-MRAM) systems, and methods of fabrication.
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2.发明申请公开(公告)号：US20180102475A1
公开(公告)日：2018-04-12
申请号：US15718458
申请日：2017-09-28
Applicant: TDK CORPORATION
Inventor： Tatsuo SHIBATA
IPC: H01L43/08 , H01L43/02 , H01L43/10 , H03B15/00 , H03H11/04 , H01F10/00 , H01F10/32 , H01F1/147 , G01R33/09
CPC classification number: H01L43/08 , G01R33/09 , G01R33/093 , G01R33/098 , H01F1/147 , H01F10/002 , H01F10/3218 , H01F10/3286 , H01F10/329 , H01L43/02 , H01L43/10 , H03B15/006 , H03H2/00 , H03H2/001 , H03H11/04
Abstract: A variable-frequency magnetoresistive effect element includes a magnetoresistive effect element, a magnetic-field applying mechanism that applies a magnetic field to the magnetoresistive effect element, an electric-field applying mechanism that applies an electric field to the magnetoresistive effect element, and a control terminal connected to the electric-field applying mechanism and used for applying a voltage that varies in at least one of magnitude and polarity to the electric-field applying mechanism. The magnetoresistive effect element contains an antiferromagnetic material or ferrimagnetic material having a magnetoelectric effect. A spin torque oscillation frequency or spin torque resonance frequency of the magnetoresistive effect element is controlled by varying the voltage applied via the control terminal in at least one of magnitude and polarity.
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公开(公告)号：US20180026645A1
公开(公告)日：2018-01-25
申请号：US15654278
申请日：2017-07-19
Applicant: Georgia Tech Research Corporation
Inventor： Chenyun Pan , Sourav Dutta , Azad Naeemi
CPC classification number: H03K19/20 , H01F10/14 , H01F10/16 , H01F10/3218 , H01L27/22 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: Embodiments of the present invention relate generally to logic devices, and more particularly, to magnetoelectric magnetic tunneling junction computational devices. Aspects of the disclosed technology include a stand-alone voltage-controlled magnetoelectric device that satisfies essential requirements for general logic applications, including nonlinearity, gain, concatenability, feedback prevention, and a complete set of Boolean operations based on the majority gate and inverter. Aspects of the present disclosed technology can eliminate the need for any auxiliary FETs to preset or complicated clocking schemes, and prevents the racing condition.
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公开(公告)号：US20170309680A1
公开(公告)日：2017-10-26
申请号：US15642577
申请日：2017-07-06
Applicant: Micron Technology, Inc.
Inventor： Wayne I. Kinney , Witold Kula , Stephen J. Kramer
CPC classification number: H01L27/222 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3218 , H01F10/329 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.
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公开(公告)号：US20170294504A1
公开(公告)日：2017-10-12
申请号：US15628782
申请日：2017-06-21
Applicant: International Business Machines Corporation
Inventor： Hariklia Deligianni , William J. Gallagher , Eugene J, O'Sullivan , Naigang Wang
IPC: H01L49/02 , H01L21/3205 , H01L21/3213 , H01F10/32 , H01F1/147 , H01F41/04 , H01F27/24 , H01L21/027 , H01F27/28
CPC classification number: H01L28/10 , C23C14/14 , H01F1/147 , H01F1/14708 , H01F10/3218 , H01F10/3254 , H01F10/3268 , H01F10/3295 , H01F17/0006 , H01F27/24 , H01F27/2804 , H01F41/042 , H01F41/304 , H01F2017/0066 , H01F2027/2809 , H01L21/0273 , H01L21/32051 , H01L21/32139
Abstract: Disclosed are magnetic structures, including on-chip inductors comprising laminated layers comprising, in order, a barrier and/or adhesion layer, a antiferromagnetic layer, a magnetic growth layer, a soft magnetic layer, an insulating non-magnetic spacer, a soft magnetic layer, a magnetic growth later, an antiferromagnetic layer. Also disclosed are methods of making such structures.
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Patent Agency Ranking
公开(公告)号：US20160276405A1
公开(公告)日：2016-09-22
申请号：US15168054
申请日：2016-05-29
Applicant: Micron Technology, Inc.
Inventor： Wayne I. Kinney , Witold Kula , Stephen J. Kramer
CPC classification number: H01L27/222 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3218 , H01F10/329 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.
Abstract translation: 公开了存储单元。 存储单元内的磁性区域包括磁性子区域和耦合器子区域的交替结构。 耦合器子区域的耦合器材料反铁磁耦合相邻磁性子区域并且影响或促进相邻磁性子区域呈现的垂直磁性取向。 通过耦合器子区彼此间隔开的相邻的磁性子区域表现出相反方向的磁取向。 磁性和耦合器子区域可以各自具有被调整以在紧凑结构中形成磁性区域的厚度。 可以减少或消除在切换存储单元中的自由区域时从磁性区域发射的磁偶极子场之间的干扰。 还公开了半导体器件结构，自旋扭矩传递磁随机存取存储器（STT-MRAM）系统和制造方法。
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7.发明授权Radio-frequency device comprising a thin film with high permittivity and permeability 有权射频装置包括具有高介电常数和磁导率的薄膜公开(公告)号：US08916391B2
公开(公告)日：2014-12-23
申请号：US12580342
申请日：2009-10-16
Applicant: Bernard Viala , Evangeline Benevent , Christophe Dubarry , Kévin Garello
Inventor： Bernard Viala , Evangeline Benevent , Christophe Dubarry , Kévin Garello
CPC classification number: H01F10/3218 , B82Y25/00 , H01F41/32 , H01Q1/38 , H01Q17/00
Abstract: A radio-frequency device comprises magneto-dielectric elements. At least one of these elements comprises a composite thin film. This film comprises a magnetic material offering permeability above 10 at 1 GHz and a dielectric material offering permittivity above 10 at 1 GHz.
Abstract translation: 射频装置包括磁电介质元件。 这些元件中的至少一个包括复合薄膜。 该膜包括在1GHz下提供高于10的磁导率的磁性材料和在1GHz下提供介电常数高于10的电介质材料。
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公开(公告)号：US08287944B2
公开(公告)日：2012-10-16
申请号：US13073195
申请日：2011-03-28
Applicant: Kaizhong Gao , Haiwen Xi
Inventor： Kaizhong Gao , Haiwen Xi
IPC: H01L43/12
CPC classification number: H01L43/12 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
Abstract: A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.
Abstract translation: 具有自由层，铁磁性钉扎层和它们之间的阻挡层的磁性隧道结电池。 自由层具有中心铁磁部分和径向靠近中心铁磁部分的稳定部分。 该结构可以用于其中磁性层的磁化取向在堆叠膜平面中的面内磁性存储单元和磁性层的磁化取向超出叠层膜的面外磁性存储单元 平面，例如垂直于堆叠平面。
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公开(公告)号：US07935435B2
公开(公告)日：2011-05-03
申请号：US12233764
申请日：2008-09-19
Applicant: Kaizhong Gao , Haiwen Xi
Inventor： Kaizhong Gao , Haiwen Xi
CPC classification number: H01L43/12 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
Abstract: A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.
Abstract translation: 具有自由层，铁磁性钉扎层和它们之间的阻挡层的磁性隧道结电池。 自由层具有中心铁磁部分和径向靠近中心铁磁部分的稳定部分。 该结构可以用于其中磁性层的磁化取向在堆叠膜平面中的面内磁性存储单元和磁性层的磁化取向在堆叠膜之外的面外磁性存储单元 平面，例如垂直于堆叠平面。
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10.发明授权公开(公告)号：US07897200B2
公开(公告)日：2011-03-01
申请号：US12183164
申请日：2008-07-31
Applicant: Jyh-Shen Tsay , Chi-Wei Lee , Gung Chern
Inventor： Jyh-Shen Tsay , Chi-Wei Lee , Gung Chern
IPC: G11B21/00 , G11B5/33 , B05D1/18 , B32B7/02 , C25D3/12 , C25D3/00 , G11C19/08 , B22F3/00 , C23C8/10
CPC classification number: C23C14/5853 , B82Y25/00 , C23C14/16 , G11B5/3906 , G11B5/66 , H01F10/3218 , H01F41/20 , Y10S428/90 , Y10T428/1107 , Y10T428/24942
Abstract: The present invention provides a ferromagnetic/antiferromagnetic coupling film structure and a fabrication method thereof. The structure includes an antiferromagnetic layer of cobalt oxide having a thickness of 2 to 15 monolayers and formed on a substrate at a temperature ranging from 700K to 900K; and a ferromagnetic layer of cobalt having a thickness of at least one monolayer for being formed on the antiferromagnetic layer of cobalt oxide.
Abstract translation: 本发明提供一种铁磁/反铁磁耦合膜结构及其制造方法。 该结构包括厚度为2至15单层的钴氧化物的反铁磁层，并在700K至900K的温度范围内形成在衬底上; 以及具有至少一个单层厚度的钴的铁磁层，用于形成在氧化钴的反铁磁层上。
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