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1.发明申请METHOD FOR PRODUCING A MAGNETIC TUNNEL JUNCTION AND MAGNETIC TUNNEL JUNCTION THUS OBTAINED 失效生产磁性隧道结的方法和获得的磁性隧道结公开(公告)号：US20110266642A1
公开(公告)日：2011-11-03
申请号：US13112050
申请日：2011-05-20
Applicant: Bernard Viala , Marie-Claire Cyrille , Bernard Dieny , Kévin Garello , Olivier Redon
Inventor： Bernard Viala , Marie-Claire Cyrille , Bernard Dieny , Kévin Garello , Olivier Redon
CPC classification number: H01F41/307 , B82Y25/00 , B82Y40/00 , C23C14/088 , C23C14/46 , G11C11/16 , H01F10/3254
Abstract: According to this method for producing a magnetic tunnel junction, a film of a dielectric material capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films. The dielectric material constituting the tunnel barrier consists of an at least partially crystalline perovskite, and said material is deposited by ion beam sputtering in a vacuum chamber.
Abstract translation: 根据这种用于制造磁性隧道结的方法，可以在两个纳米晶体或非晶磁性膜之间沉积能够用作隧道势垒的电介质材料的膜。 构成隧道势垒的电介质材料由至少部分结晶的钙钛矿组成，所述材料通过离子束溅射沉积在真空室中。
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2.发明授权Method for producing a magnetic tunnel junction and magnetic tunnel junction thus obtained 失效用于制造由此获得的磁性隧道结和磁性隧道结的方法公开(公告)号：US08669122B2
公开(公告)日：2014-03-11
申请号：US13112050
申请日：2011-05-20
Applicant: Bernard Viala , Marie-Claire Cyrille , Bernard Dieny , Kévin Garello , Olivier Redon
Inventor： Bernard Viala , Marie-Claire Cyrille , Bernard Dieny , Kévin Garello , Olivier Redon
IPC: H01L21/20
CPC classification number: H01F41/307 , B82Y25/00 , B82Y40/00 , C23C14/088 , C23C14/46 , G11C11/16 , H01F10/3254
Abstract: According to this method for producing a magnetic tunnel junction, a film of a dielectric material capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films. The dielectric material constituting the tunnel barrier consists of an at least partially crystalline perovskite, and said material is deposited by ion beam sputtering in a vacuum chamber.
Abstract translation: 根据这种用于制造磁性隧道结的方法，可以在两个纳米晶体或非晶磁性膜之间沉积能够用作隧道势垒的电介质材料的膜。 构成隧道势垒的介电材料由至少部分结晶的钙钛矿组成，所述材料通过离子束溅射沉积在真空室中。
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3.发明授权Radio-frequency device comprising a thin film with high permittivity and permeability 有权射频装置包括具有高介电常数和磁导率的薄膜公开(公告)号：US08916391B2
公开(公告)日：2014-12-23
申请号：US12580342
申请日：2009-10-16
Applicant: Bernard Viala , Evangeline Benevent , Christophe Dubarry , Kévin Garello
Inventor： Bernard Viala , Evangeline Benevent , Christophe Dubarry , Kévin Garello
CPC classification number: H01F10/3218 , B82Y25/00 , H01F41/32 , H01Q1/38 , H01Q17/00
Abstract: A radio-frequency device comprises magneto-dielectric elements. At least one of these elements comprises a composite thin film. This film comprises a magnetic material offering permeability above 10 at 1 GHz and a dielectric material offering permittivity above 10 at 1 GHz.
Abstract translation: 射频装置包括磁电介质元件。 这些元件中的至少一个包括复合薄膜。 该膜包括在1GHz下提供高于10的磁导率的磁性材料和在1GHz下提供介电常数高于10的电介质材料。
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4.发明申请RADIO-FREQUENCY DEVICE COMPRISING A THIN FILM WITH HIGH PERMITTIVITY AND PERMEABILITY 有权包含具有高容许性和渗透性的薄膜的无线电频率装置公开(公告)号：US20100151797A1
公开(公告)日：2010-06-17
申请号：US12580342
申请日：2009-10-16
Applicant: Bernard VIALA , Evangeline Benevent , Christoph Dubarry , Kévin Garello
Inventor： Bernard VIALA , Evangeline Benevent , Christoph Dubarry , Kévin Garello
CPC classification number: H01F10/3218 , B82Y25/00 , H01F41/32 , H01Q1/38 , H01Q17/00
Abstract: A radio-frequency device comprises magneto-dielectric elements. At least one of these elements comprises a composite thin film (10). This film (10) comprises a magnetic material (16, 18) offering permeability above 10 at 1 GHz and a dielectric material (12, 22) offering permittivity above 10 at 1 GHz.
Abstract translation: 射频装置包括磁电介质元件。 这些元件中的至少一个包括复合薄膜（10）。 该膜（10）包括在1GHz下提供高于10的磁导率的磁性材料（16,18）和在1GHz下提供介电常数高于10的电介质材料（12,22）。
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