公开(公告)号：US20130002362A1

公开(公告)日：2013-01-03

申请号：US13518054

申请日：2010-12-20

Applicant: Marie Claire Cyrille ,  Bertrand Delaet ,  Ursula Ebels ,  Dimitri Houssameddine

Inventor： Marie Claire Cyrille ,  Bertrand Delaet ,  Ursula Ebels ,  Dimitri Houssameddine

IPC: H03B5/30

CPC classification number: H03B15/006

Abstract: A radiofrequency oscillator comprises: a free layer (4), a current injector (6) for injecting spin-polarized current into the free layer, this injector having a spin-polarized current injection face (16) directly in contact with the free layer, a magnetoresistive contact (8) having a measurement face (26) directly in contact with the free layer, in order to form, in combination with the free layer, a tunnel junction for measuring the precession of the magnetization of the free layer, a conducting pad (30) directly in contact with the free layer in order to make an electrical current flow through the injector without passing through the magnetoresistive contact. At least part of the measurement face (26) and part of the injection face (16) are placed facing each other on each side of the free layer (4).

Abstract translation: 射频振荡器包括：自由层（4），用于将自旋极化电流注入自由层的电流注入器（6），该注入器具有直接与自由层接触的自旋极化电流注入面（16） 具有直接与自由层接触的测量面（26）的磁阻触点（8），以便与自由层组合形成用于测量自由层的磁化进动的隧道结，导电 焊盘（30）直接与自由层接触，以便使电流流过注射器而不通过磁阻触点。 所述测量面（26）的至少一部分和所述注入面（16）的一部分在所述自由层（4）的每一侧彼此相对放置。

公开(公告)号：US20100134196A1

公开(公告)日：2010-06-03

申请号：US12620922

申请日：2009-11-18

Applicant: Marie-Claire Cyrille ,  Bertrand Delaet ,  Jean-Francois Nodin ,  Veronique Sousa

Inventor： Marie-Claire Cyrille ,  Bertrand Delaet ,  Jean-Francois Nodin ,  Veronique Sousa

IPC: H03B5/40

CPC classification number: H01F41/305 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3286 ,  H01L43/08 ,  H03B15/006

Abstract: This radio-frequency oscillator includes a magnetoresistive device in which an electric current is able to flow. The magnetoresistive device includes a first magnetic layer, known as a “trapped layer”, whereof the magnetization is of fixed direction. The magnetoresistive device further includes a second magnetic layer known as a “free layer” and a non-magnetic layer, known as an “intermediate layer”, interposed between the first and second layer, known as the intermediate layer. The oscillator further includes means capable of causing an electron current to flow in said layers constituting the aforementioned stack and in a direction perpendicular to the plane which contains said layers. One of the three layers constituting the magnetoresistive device includes at least one constriction zone of the electric current passing through it.

Abstract translation: 该射频振荡器包括其中电流能够流动的磁阻器件。 磁阻器件包括称为“俘获层”的第一磁性层，其磁化方向为固定方向。 磁阻器件还包括被称为“自由层”的第二磁性层和被称为“中间层”的非磁性层，介于第一和第二层之间，被称为中间层。 振荡器还包括能够使电子流在构成上述叠层的层中并且在垂直于包含所述层的平面的方向上流动的装置。 构成磁阻器件的三层之一包括至少一个通过它的电流的收缩区域。

公开(公告)号：US07245459B2

公开(公告)日：2007-07-17

申请号：US10955570

申请日：2004-09-30

Applicant: Marie-Claire Cyrille ,  Ching Hwa Tsang ,  Huey-Ming Tzeng

Inventor： Marie-Claire Cyrille ,  Ching Hwa Tsang ,  Huey-Ming Tzeng

IPC: G11B5/127 ,  B24B249/00

CPC classification number: G11B5/127 ,  Y10T29/49036

Abstract: Magnetic sensors are fabricated with an initial length that is slightly longer than their finished length. The sensors are then critically lapped and exposed for target signal output. The final target length of the sensors is obtained by first exposing the sensors to a photolithographic process and then directly lapping the excess length from the sensors. The length of sensor material that is removed is in the range of several nanometers. The target end point during lapping may be ascertained by detecting the change in resistance between the sensor and leads in the lapping tool as the excess material is lapped from the sensor.

Abstract translation: 磁传感器制造的初始长度比其完成的长度稍长。 然后对传感器进行严格研磨和曝光，以进行目标信号输出。 传感器的最终目标长度通过首先将传感器暴露于光刻工艺，然后直接从传感器研磨多余长度来获得。 被去除的传感器材料的长度在几纳米的范围内。 研磨过程中的目标终点可以通过检测传感器与研磨工具中的引线之间的电阻变化来确定，因为多余的材料从传感器上研磨。

公开(公告)号：US07244169B2

公开(公告)日：2007-07-17

申请号：US10954868

申请日：2004-09-30

Applicant: Marie-Claire Cyrille ,  Kuok San Ho ,  Tsann Lin ,  Scott Arthur MacDonald ,  Huey-Ming Tzeng

Inventor： Marie-Claire Cyrille ,  Kuok San Ho ,  Tsann Lin ,  Scott Arthur MacDonald ,  Huey-Ming Tzeng

IPC: B24B49/00 ,  B24B51/00 ,  G11B5/42

CPC classification number: B24B37/00 ,  B24B37/013 ,  B24B41/06 ,  B24B49/10 ,  Y10T29/49036 ,  Y10T29/49048

Abstract: An in-line lapping guide uses a contiguous resistor in a cavity to separate a lithographically-defined sensor from the in-line lapping guide. As lapping proceeds through the cavity toward the sensor, the resistance across the sensor leads increases to a specific target, thereby indicating proximity to the sensor itself. The contiguous resistor is fabricated electrically in parallel to the sensor and the in-line lapping guide. The total resistance across the sensor leads show resistance change even when lapping through the cavity portion. One method to produce the contiguous resistor is to partial mill the cavity between the sensor and the in-line lapping guide so that a film of metal is left. Total resistance across leads is the parallel resistance of the sensor, the contiguous resistor, and the in-line lapping guide.

Abstract translation: 在线研磨引导件使用空腔中的连续电阻器将光刻定影传感器与在线研磨导轨分离。 当研磨通过腔朝向传感器进行时，传感器引线上的电阻增加到特定目标，从而指示传感器本身的接近度。 连续的电阻器与传感器和在线研磨导轨平行地制造。 传感器引线上的总电阻即使在通过空腔部分研磨时也会显示电阻变化。 产生连续电阻器的一种方法是将传感器和在线研磨引导件之间的空腔部分研磨，使得留下金属膜。 引线之间的总电阻是传感器，相邻电阻器和在线研磨导轨的并联电阻。

公开(公告)号：US20060256482A1

公开(公告)日：2006-11-16

申请号：US11126508

申请日：2005-05-10

Applicant: Satoru Araki ,  Robert Beach ,  Marie-Claire Cyrille ,  Wipul Jayasekara ,  Quang Le ,  Jui-Lung Li ,  David Seagle ,  Howard Zolla

Inventor： Satoru Araki ,  Robert Beach ,  Marie-Claire Cyrille ,  Wipul Jayasekara ,  Quang Le ,  Jui-Lung Li ,  David Seagle ,  Howard Zolla

IPC: G11B5/33

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  G11B5/112 ,  G11B5/3169 ,  G11B5/3906 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

公开(公告)号：US20060196040A1

公开(公告)日：2006-09-07

申请号：US11072559

申请日：2005-03-03

Applicant: Marie-Claire Cyrille ,  Meng Ding ,  Elizabeth Dobisz ,  Kuok Ho ,  Scott MacDonald

Inventor： Marie-Claire Cyrille ,  Meng Ding ,  Elizabeth Dobisz ,  Kuok Ho ,  Scott MacDonald

IPC: G11B5/127 ,  C23C14/00

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A method for making a magnetoresistive read head so that the pinned ferromagnetic layer is wider than the stripe height of the free ferromagnetic layer uses ion milling with the ion beam aligned at an angle to the substrate supporting the stack of layers making up the read head. The stack is patterned with photoresist to define a rectangular region with front and back long edges aligned parallel to the read head track width. After ion milling in two opposite directions orthogonal to the front and back long edges, the pinned layer width has an extension. The extension makes the width of the pinned layer greater than the stripe height of the free layer after the substrate and stack of layers are lapped. The length of the extension is determined by the angle between the substrate and the ion beam and the thickness of the photoresist.

Abstract translation: 一种用于制造磁阻读取头的方法，使得被钉扎铁磁层比自由铁磁层的条带高度宽，使用离子铣削，离子束与支撑构成读取头的层叠层的衬底成一角度对准。 叠层用光致抗蚀剂图案化以限定具有平行于读头磁道宽度排列的前后长边缘的矩形区域。 在与前后长边缘正交的两个相反方向离子铣削后，钉扎层宽度具有延伸。 在衬底和层叠层之后，延伸部使得钉扎层的宽度大于自由层的条带高度。 延伸长度由基板和离子束之间的角度以及光致抗蚀剂的厚度决定。

公开(公告)号：US07057863B2

公开(公告)日：2006-06-06

申请号：US10982220

申请日：2004-11-05

Applicant: Marie-Claire Cyrille ,  Hardayal Singh Gill ,  James Mac Freitag

Inventor： Marie-Claire Cyrille ,  Hardayal Singh Gill ,  James Mac Freitag

IPC: G11B5/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49048

Abstract: A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer, and forming a first layer of a carbon composition above the active area of the free layer. A layer of resist is formed above the first layer of carbon composition. A bias layer is formed above the tab areas of the free layer, the bias layer being operative to substantially pin magnetic moments of the tab areas of the free layer. Leads are formed above the bias layer. A second layer of carbon composition is formed above the tab areas of the free layer. Any material above a plane extending parallel to portions of the second layer of carbon composition above the tab areas are removed using chemical-mechanical polishing. Any remaining carbon composition is removed.

Abstract translation: 一种用于制造具有反平行突片区域的传感器的方法。 该方法包括形成自由层，并且在自由层的有效区域上方形成碳组合物的第一层。 在第一层碳组合物之上形成一层抗蚀剂。 偏置层形成在自由层的突片区域上方，偏置层可操作以基本上固定自由层的突片区域的磁矩。 引线形成在偏置层上方。 第二层碳组合物形成在自由层的突片区域上方。 使用化学机械抛光除去平行于第二层碳组合物的部分的平面延伸的平面上的任何材料。 任何剩余的碳组成被除去。

公开(公告)号：US20050269288A1

公开(公告)日：2005-12-08

申请号：US11200757

申请日：2005-08-09

Applicant: Marie-Claire Cyrille ,  Ying Hong ,  Wipul Jayasekara

Inventor： Marie-Claire Cyrille ,  Ying Hong ,  Wipul Jayasekara

IPC: G11B5/31 ,  G11B5/39 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  G11B5/127 ,  G11B5/33 ,  H04R31/00

CPC classification number: B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01J2237/3114 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49046

Abstract: A method for constructing a magnetoresistive sensor which eliminates all redeposited material (redep) from the sides of the sensor. The method involves forming a mask over a plurality of sensor layers, and then performing an ion mill at an angle that is nearly normal to the surface of the sensor layers. A second (glancing) ion mill is then performed at a larger angle with respect to the normal. The first ion mill may be 0-30 degrees with respect to normal, whereas the second ion mill can be 50-89 degrees with respect to normal. The first ion mill is performed with a larger bias voltage than the second ion mill. The higher bias voltage of the first ion mill provides a well collimated ion beam to form straight vertical side walls. The lower bias voltage of the second ion mill prevent damage to the sensor layers during the removal of redep from the sides of the sensor.

Abstract translation: 一种用于构造磁阻传感器的方法，其从传感器的侧面消除所有再沉积的材料（重新进行）。 该方法包括在多个传感器层上形成掩模，然后以与传感器层的表面几乎垂直的角度执行离子磨。 然后相对于法线以较大的角度执行第二（扫视）离子磨。 第一离子磨可相对于正常为0-30度，而第二离子磨可相对于正常为50-89度。 第一离子磨机以比第二离子磨机更大的偏压进行。 第一离子磨的较高的偏置电压提供了准直的离子束以形成直立的垂直侧壁。 第二离子磨的偏置电压较低可以防止传感器层从传感器的侧面移除重新进行检测。

公开(公告)号：US06969625B2

公开(公告)日：2005-11-29

申请号：US10949433

申请日：2004-09-24

Applicant: Marie-Claire Cyrille ,  Frederick H. Dill ,  Cherngye Hwang ,  Jui-Lung Li

Inventor： Marie-Claire Cyrille ,  Frederick H. Dill ,  Cherngye Hwang ,  Jui-Lung Li

IPC: G11B5/39 ,  G11B5/31 ,  H01L21/304 ,  H01L43/08 ,  H01L21/00 ,  H01L21/44

CPC classification number: G11B5/313

Abstract: A method and structure for a microelectronic device comprises a first film over a substrate, a first polish resistant layer over the first film, a second film over the first polish resistant layer, a second polish resistant layer over the second film, wherein the first and second polish resistant layers comprise diamond-like carbon. The first film comprises an electrically resistive material, while the second film comprises low resistance conductive material. The first film is an electrical resistor embodied as a magnetic read sensor. The electrically resistive material is sensitive to magnetic fields. The device further comprises a generally vertical junction between the first and second films and a dielectric film abutted to the electrically resistive material.

Abstract translation: 微电子器件的方法和结构包括：衬底上的第一膜，第一膜上的第一耐抛光层，第一耐抛光层上的第二膜，第二膜上的第二耐光层，其中第一和第二膜 第二耐光层包括类金刚石碳。 第一膜包括电阻材料，而第二膜包括低电阻导电材料。 第一个胶片是一个实现为磁读取传感器的电阻器。 电阻材料对磁场敏感。 该装置还包括在第一和第二膜之间的大致垂直的接合点和邻接于电阻材料的电介质膜。

公开(公告)号：US20050041341A1

公开(公告)日：2005-02-24

申请号：US10949433

申请日：2004-09-24

Applicant: Marie-Claire Cyrille ,  Frederick Dill ,  Cherngye Hwang ,  Jui-Lung Li

Inventor： Marie-Claire Cyrille ,  Frederick Dill ,  Cherngye Hwang ,  Jui-Lung Li

IPC: G11B5/39 ,  G11B5/31 ,  H01L21/304 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127 ,  H01L21/302 ,  H01L21/461

CPC classification number: G11B5/313

Abstract: A method and structure for a microelectronic device comprises a first film over a substrate, a first polish resistant layer over the first film, a second film over the first polish resistant layer, a second polish resistant layer over the second film, wherein the first and second polish resistant layers comprise diamond-like carbon. The first film comprises an electrically resistive material, while the second film comprises low resistance conductive material. The first film is an electrical resistor embodied as a magnetic read sensor. The electrically resistive material is sensitive to magnetic fields. The device further comprises a generally vertical junction between the first and second films and a dielectric film abutted to the electrically resistive material.