Invention Application
- Patent Title: METHOD FOR PRODUCING A MAGNETIC TUNNEL JUNCTION AND MAGNETIC TUNNEL JUNCTION THUS OBTAINED
- Patent Title (中): 生产磁性隧道结的方法和获得的磁性隧道结
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Application No.: US13112050Application Date: 2011-05-20
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Publication No.: US20110266642A1Publication Date: 2011-11-03
- Inventor: Bernard Viala , Marie-Claire Cyrille , Bernard Dieny , Kévin Garello , Olivier Redon
- Applicant: Bernard Viala , Marie-Claire Cyrille , Bernard Dieny , Kévin Garello , Olivier Redon
- Applicant Address: FR Paris FR Paris
- Assignee: Centre National De La Recherche Scientifique,Commissariat A L'Energie Atomique Et Aux Energie Alternatives
- Current Assignee: Centre National De La Recherche Scientifique,Commissariat A L'Energie Atomique Et Aux Energie Alternatives
- Current Assignee Address: FR Paris FR Paris
- Priority: FR0858469 20081211
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/20
Abstract:
According to this method for producing a magnetic tunnel junction, a film of a dielectric material capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films. The dielectric material constituting the tunnel barrier consists of an at least partially crystalline perovskite, and said material is deposited by ion beam sputtering in a vacuum chamber.
Public/Granted literature
- US08669122B2 Method for producing a magnetic tunnel junction and magnetic tunnel junction thus obtained Public/Granted day:2014-03-11
Information query
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