Invention Grant
- Patent Title: Magnetic nitride film
- Patent Title (中): 磁性氮化膜
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Application No.: US445105Application Date: 1989-12-07
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Publication No.: US5049209APublication Date: 1991-09-17
- Inventor: Hiroshi Sakakima , Koichi Osano , Yuji Omata , Mitsuo Satomi , Koichi Kugimiya
- Applicant: Hiroshi Sakakima , Koichi Osano , Yuji Omata , Mitsuo Satomi , Koichi Kugimiya
- Applicant Address: JPX Kadoma
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JPX Kadoma
- Priority: JPX61-54054 19860312; JPX61-199631 19860826
- Main IPC: H01F10/13
- IPC: H01F10/13 ; H01F10/32
Abstract:
The disclosed magnetic nitride T-M-N film (T is at least one metal selected from the group consisting of Fe, Co, Ni and Mn; M is at least one metal selected from the group consisting of Nb, Zr, Ti, Ta, Hf, Cr, W and Mo; N is nitrogen (N)) has excellent wear resistance and high electric resistivity, and the compositionally modulated nitride film shows a soft magnetic property, as well as thermal stability of the properties.
Public/Granted literature
- US5598368A Batch erasable nonvolatile memory device and erasing method Public/Granted day:1997-01-28
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