公开(公告)号：US6084752A

公开(公告)日：2000-07-04

申请号：US802709

申请日：1997-02-19

Applicant: Hiroshi Sakakima ,  Yousuke Irie ,  Yasuhiro Kawawake ,  Mitsuo Satomi

Inventor： Hiroshi Sakakima ,  Yousuke Irie ,  Yasuhiro Kawawake ,  Mitsuo Satomi

IPC: G11B5/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

Abstract: A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.

公开(公告)号：US6031692A

公开(公告)日：2000-02-29

申请号：US223663

申请日：1998-12-30

Applicant: Yasuhiro Kawawake ,  Mitsuo Satomi ,  Hiroshi Sakakima

Inventor： Yasuhiro Kawawake ,  Mitsuo Satomi ,  Hiroshi Sakakima

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3903 ,  H01F10/3204 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/3996

Abstract: A magnetoresistive device of the present invention includes: a soft magnetic layer; a hard magnetic layer; a non-magnetic layer formed between the soft magnetic layer and the hard magnetic layer; and an interface magnetic layer, provided at an interface between the soft magnetic layer and the non-magnetic layer, for enhancing magnetic scattering, wherein the soft magnetic layer includes an amorphous structure.

Abstract translation: 本发明的磁阻装置包括：软磁性层; 硬磁层; 形成在软磁性层和硬磁性层之间的非磁性层; 以及设置在所述软磁性层和所述非磁性层之间的界面处的用于增强磁散射的界面磁性层，其中所述软磁性层包括无定形结构。

公开(公告)号：US5433999A

公开(公告)日：1995-07-18

申请号：US128075

申请日：1993-09-29

Applicant: Yoshiki Goto ,  Yukihiro Shimasaki ,  Kazuyoshi Honda ,  Tatsuaki Ishida ,  Kiyokazu Tohma ,  Ryuji Sugita ,  Yasuhiro Kawawake

Inventor： Yoshiki Goto ,  Yukihiro Shimasaki ,  Kazuyoshi Honda ,  Tatsuaki Ishida ,  Kiyokazu Tohma ,  Ryuji Sugita ,  Yasuhiro Kawawake

IPC: G11B5/73 ,  G11B5/735 ,  B32B5/16

CPC classification number: G11B5/735 ,  Y10S428/90 ,  Y10T428/257

Abstract: In a magnetic recording medium with a back coat layer including polyurethane having a Tg (glass-transition temperature) below room temperature, isocyanate hardener, carbon powder and inorganic abrasive pigment are formed on a face of a non-magnetic substrate opposite a face covered by a magnetic recording film. Using this back coat layer, improved post contact characteristics and the like are obtained and smooth running conditions under small tensions are realized. Further, the magnetic recording medium causes only a small amount of head wear, and the medium has improved wear resistance.

Abstract translation: 在具有Tg（玻璃化转变温度）低于室温的聚氨酯的背涂层的磁记录介质中，在非磁性基板的与被覆盖的表面相对的表面上形成异氰酸酯硬化剂，碳粉末和无机研磨颜料 磁记录膜。 使用这种背涂层，获得改进的后接触特性等，并实现在小张力下的平滑运行条件。 此外，磁记录介质仅导致少量的头部磨损，并且介质具有改善的耐磨性。

公开(公告)号：US07220482B2

公开(公告)日：2007-05-22

申请号：US10055667

申请日：2002-01-22

Applicant: Norishisa Mino ,  Yasuhiro Kawawake ,  Kiyoyuki Morita ,  Shigeo Yoshii ,  Mutuaki Murakami ,  Osamu Kusumoto

Inventor： Norishisa Mino ,  Yasuhiro Kawawake ,  Kiyoyuki Morita ,  Shigeo Yoshii ,  Mutuaki Murakami ,  Osamu Kusumoto

IPC: G11B5/702 ,  G11B5/712

CPC classification number: B82Y30/00 ,  B05D1/185 ,  B82Y10/00 ,  B82Y40/00 ,  C01P2004/03 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2004/86 ,  C01P2006/33 ,  C01P2006/42 ,  C09C3/12 ,  G11B5/712 ,  G11B5/74 ,  G11B5/746 ,  G11B5/82 ,  G11B5/84 ,  G11B2005/0002 ,  G11C11/14 ,  G11C11/16 ,  G11C11/5671 ,  G11C2216/08 ,  H01F1/0306 ,  H01F1/047 ,  H01F10/007 ,  H01F10/123 ,  H01F41/305 ,  H01L29/42324 ,  Y10T428/1114 ,  Y10T428/1193 ,  Y10T428/24388 ,  Y10T428/24893 ,  Y10T428/2991 ,  Y10T428/2995 ,  Y10T428/2998 ,  Y10T428/31667

Abstract: The present invention provides aligned fine particles that are aligned on a substrate. An organic coating film is bonded to surfaces of the fine particles is formed on the surfaces of the fine particles. An organic coating film bonded to a surface of the substrate is formed on the surface of the substrate. The organic coating film on the surfaces of the fine particles is bonded to the organic coating film on the surface of the substrate, whereby the fine particles are immobilized and aligned on the substrate. Thus, it is possible to align the fine particles of a nanometer scale in a specific direction. When fine magnetic particles are used, a magnetic recording medium for high recording density can be obtained, and a high-density magnetic recording/reproducing apparatus can be provided.

Abstract translation: 本发明提供了在衬底上对准的对准的细颗粒。 在微细颗粒的表面上形成有机涂膜粘合到细颗粒的表面上。 在基板的表面上形成有结合到基板表面的有机涂膜。 微粒表面上的有机涂膜与基板表面上的有机涂膜接合，由此将微粒固定并在基板上取向。 因此，可以在特定方向上对准纳米级的微粒。 当使用精细的磁性颗粒时，可以获得用于高记录密度的磁记录介质，并且可以提供高密度磁记录/再现装置。

公开(公告)号：US06535362B2

公开(公告)日：2003-03-18

申请号：US08979886

申请日：1997-11-26

Applicant: Yasuhiro Kawawake ,  Hiroshi Sakakima ,  Mitsuo Satomi

Inventor： Yasuhiro Kawawake ,  Hiroshi Sakakima ,  Mitsuo Satomi

IPC: G11B5127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3951 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3268 ,  H01L43/08

Abstract: The magnetoresistive device of the present invention includes: at least two magnetic layers stacked via a non-magnetic layer therebetween; and a metal reflective layer of conduction electrons formed so as to be in contact with at least one of outermost two layers of the magnetic layers. The metal reflective layer is in contact with one surface of the outermost magnetic layer which is opposite to the other surface of the outermost magnetic layer in contact with the non-magnetic layer. The metal reflective layer is likely to reflect conduction electrons while maintaining a spin direction of electrons.

Abstract translation: 本发明的磁阻器件包括：通过其间的非磁性层堆积的至少两个磁性层; 以及形成为与最外两层磁性层中的至少一层接触的传导电子的金属反射层。 金属反射层与最外面的磁性层的与非磁性层接触的最外面的磁性层的另一个表面相对的一个表面接触。 金属反射层可能反射传导电子同时保持电子的自旋方向。

公开(公告)号：US06245450B1

公开(公告)日：2001-06-12

申请号：US09236711

申请日：1999-01-25

Applicant: Yasuhiro Kawawake ,  Hiroshi Sakakima ,  Mitsuo Satomi ,  Yasunari Sugita

Inventor： Yasuhiro Kawawake ,  Hiroshi Sakakima ,  Mitsuo Satomi ,  Yasunari Sugita

IPC: G11B566

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3919 ,  G11B5/3925 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3263 ,  H01F10/3268 ,  H01L43/10 ,  Y10S428/90 ,  Y10T428/1121

Abstract: An exchange coupling film of the present invention includes a substrate and a multilayer film. The multilayer film includes: a ferromagnetic layer and a magnetization rotation suppressing layer provided adjacent to the ferromagnetic layer for suppressing a magnetization rotation of the ferromagnetic layer; and the magnetization rotation suppressing layer includes an Fe—M—O layer (where M=Al, Ti, Co, Mn, Cr, Ni or V).

Abstract translation: 本发明的交换耦合膜包括基板和多层膜。 多层膜包括：铁磁层和与铁磁层相邻设置的用于抑制铁磁层的磁化旋转的磁化抑制层; 磁化抑制层包括Fe-M-O层（其中M = Al，Ti，Co，Mn，Cr，Ni或V）。

公开(公告)号：US06608738B2

公开(公告)日：2003-08-19

申请号：US09920309

申请日：2001-08-01

Applicant: Hiroshi Sakakima ,  Yasuhiro Kawawake ,  Yasunari Sugita

Inventor： Hiroshi Sakakima ,  Yasuhiro Kawawake ,  Yasunari Sugita

IPC: G11B539

CPC classification number: G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3272 ,  H01L27/228 ,  H01L43/08

Abstract: A magnetoresistance effect device includes: a free layer whose magnetization direction is easily rotated by an external magnetic field; a non-magnetization layer; and a pinned layer whose magnetization direction is not easily rotated by an external magnetic field, the pinned layer being provided on a face of the non-magnetization layer which is opposite to a face on which the free layer is formed, wherein the pinned layer includes: a first non-magnetic film for exchange-coupling; and first and second magnetic films which are antiferromagnetically exchange-coupled to each other via the first non-magnetic film, and the first non-magnetic film includes one of the oxides of Ru, Ir, Rh, and Re.

Abstract translation: 磁阻效应器件包括：其磁化方向容易被外部磁场旋转的自由层; 非磁化层; 以及其磁化方向不容易被外部磁场旋转的被钉扎层，所述被钉扎层设置在与形成有自由层的面相反的非磁化层的面上，所述被钉扎层包括 ：用于交换耦合的第一非磁性膜; 以及通过第一非磁性膜反铁磁交换耦合的第一和第二磁性膜，第一非磁性膜包括Ru，Ir，Rh和Re的氧化物之一。

公开(公告)号：US06597547B1

公开(公告)日：2003-07-22

申请号：US09162300

申请日：1998-09-28

Applicant: Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita ,  Hiroshi Sakakima

Inventor： Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita ,  Hiroshi Sakakima

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3268 ,  H01L43/10

Abstract: A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an &agr;-Fe2O3 film. A surface roughness of the multilayer film is about 0.5 nm or less.

Abstract translation: 本发明的磁阻效应器件包括多层膜。 多层膜包括反铁磁性膜，第一铁磁性膜，非磁性膜和第二铁磁性膜，其以直接或经由下层在非磁性基板上依次设置。 反铁磁膜包括α-Fe2O3膜。 多层膜的表面粗糙度为约0.5nm以下。

公开(公告)号：US06258470B1

公开(公告)日：2001-07-10

申请号：US09228703

申请日：1999-01-12

Applicant: Hiroshi Sakakima ,  Eiichi Hirota ,  Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita

Inventor： Hiroshi Sakakima ,  Eiichi Hirota ,  Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita

IPC: G11B566

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3948 ,  G11B5/3954 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/32 ,  H01F10/3218 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/10 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121

Abstract: An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8

Abstract translation: 本发明的交换耦合膜包括铁磁层和钉扎层，该钉扎层与铁磁层接触以固定铁磁层的磁化方向，钉扎层包括（AB）2Ox层，其中：O表示 氧原子; 2.8

公开(公告)号：US5841611A

公开(公告)日：1998-11-24

申请号：US429714

申请日：1995-04-27

Applicant: Hiroshi Sakakima ,  Yousuke N Irie ,  Mitsuo Satomi ,  Yasuhiro Kawawake

Inventor： Hiroshi Sakakima ,  Yousuke N Irie ,  Mitsuo Satomi ,  Yasuhiro Kawawake

IPC: G01R33/09 ,  G06K19/06 ,  G11B5/39 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H03F7/02 ,  H03F15/00 ,  G11B5/127

CPC classification number: H03F7/02 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01F10/3281 ,  H01L27/222 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/3925 ,  G11C2211/5616

Abstract: A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.

Abstract translation: 本发明的磁阻效应器件包括：衬底; 以及形成在基板上的多层结构。 多层结构包括硬磁膜，软磁膜和用于从硬磁膜分离硬磁膜的非磁性金属膜。 硬磁性膜的磁化曲线具有良好的正方形特征，硬磁性膜的磁化容易轴的方向基本上与要检测的磁场的方向一致。