Invention Grant
- Patent Title: Magnetoresistive device with an &agr;-Fe2O3 antiferromagnetic film and indirect exchange coupling film layers of differing thickness
- Patent Title (中): 具有α-Fe2O3反铁磁膜的磁阻器件和不同厚度的间接交换耦合膜层
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Application No.: US09162300Application Date: 1998-09-28
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Publication No.: US06597547B1Publication Date: 2003-07-22
- Inventor: Yasuhiro Kawawake , Mitsuo Satomi , Yasunari Sugita , Hiroshi Sakakima
- Applicant: Yasuhiro Kawawake , Mitsuo Satomi , Yasunari Sugita , Hiroshi Sakakima
- Priority: JP9-263212 19970929
- Main IPC: G11B539
- IPC: G11B539
Abstract:
A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an &agr;-Fe2O3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
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