公开(公告)号：US06831816B2

公开(公告)日：2004-12-14

申请号：US10197272

申请日：2002-07-15

Applicant: Hardayal Singh Gill

Inventor： Hardayal Singh Gill

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996

Abstract: A magnetic head assembly includes a read head with a current perpendicular to the planes (CPP) sensor. The CPP sensor includes an AP pinned layer structure, a free layer and a spacer layer which is located between the free layer and the AP pinned layer structure. An in-stack longitudinal biasing structure for longitudinally biasing the free layer includes a pinned layer, an AFM pinning layer for pinning the pinned layer and a chromium spacer layer which is located between the pinned layer and the free layer. The free layer includes first and second free films with the first free film being iron and interfacing the spacer layer. The second free film may be nickel iron for imparting magnetic softness to the first free film. The pinned layer and a second AP pinned layer of the free layer structure may also be iron. The iron content of the layers in the sensor and the chromium spacer layer significantly increase the magnetoresistive coefficient dr/R of the CPP sensor.

公开(公告)号：US06829122B2

公开(公告)日：2004-12-07

申请号：US09961594

申请日：2001-09-24

Applicant: Kenichiro Yamada ,  Naoki Mukoyama ,  Hidehiko Suzuki ,  Hitoshi Kanai

Inventor： Kenichiro Yamada ,  Naoki Mukoyama ,  Hidehiko Suzuki ,  Hitoshi Kanai

IPC: G11B539

CPC classification number: B82Y10/00 ,  G11B5/3113 ,  G11B5/3903 ,  G11B5/3929 ,  G11B5/3932

Abstract: A magnetic head of a magnetoresistance type is provided. The magnetic head comprises a magnetoresistance film, an underlying layer formed on each of both sides of the magnetoresistance film, and a magnetic-domain regulating film formed on the underlying layer so as to regulate a magnetic domain of a free magnetic layer in the magnetoresistance film. The underlying layer has a laminated structure of a tungsten-(W)-group metal layer formed on a tantalum-(Ta)-group metal layer. The underlying layer is formed so thick as to arrange the magnetic-domain regulating film at a position corresponding to the free magnetic layer.

Abstract translation: 提供磁阻型磁头。 磁头包括磁阻膜，形成在磁阻膜的两侧的每一侧上的下层，以及形成在下层上的磁畴调节膜，以调节磁阻膜中的自由磁性层的磁畴 。 下层具有在钽 - （Ta） - 金属层上形成的钨 - （W） - 金属层的叠层结构。 底层形成得如此厚以便将磁畴调节膜布置在与自由磁性层相对应的位置。

公开(公告)号：US06807031B2

公开(公告)日：2004-10-19

申请号：US10190182

申请日：2002-07-03

Applicant: Declan Macken ,  Gavin Brinkley ,  Taras Grigoryevich Pokhil ,  Alexandar Mikhailovich Shukh ,  Martin Louis Plumer

Inventor： Declan Macken ,  Gavin Brinkley ,  Taras Grigoryevich Pokhil ,  Alexandar Mikhailovich Shukh ,  Martin Louis Plumer

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/11 ,  G11B5/3113 ,  G11B5/3903 ,  G11B2005/3996

Abstract: A transducing head includes at least three magnetic layers. At least two of these magnetic layers function as shields of a reader portion of the transducing head, and at least one of these magnetic layers functions as a pole of a writer portion of the transducing head. Importantly, at least one of the three magnetic layers is formed of a thin film structure having a first and a second ferromagnetic layer, a nonmagnetic spacer layer, and a bias layer. The spacer layer is positioned between the first and the second ferromagnetic layers. The bias layer is positioned adjacent the first ferromagnetic layer. The second ferromagnetic layer has a thickness-magnetic moment product substantially equal to a thickness-magnetic moment product of the first ferromagnetic layer. An easy axis of the second ferromagnetic layer is substantially parallel to an easy axis of the first ferromagnetic layer.

Abstract translation: 换能头包括至少三个磁性层。 这些磁性层中的至少两个用作换能头的读取器部分的屏蔽，并且这些磁性层中的至少一个用作换能头的写入器部分的极点。 重要的是，三个磁性层中的至少一个由具有第一和第二铁磁层，非磁性间隔层和偏置层的薄膜结构形成。 间隔层位于第一和第二铁磁层之间。 偏置层位于第一铁磁层附近。 第二铁磁层具有基本上等于第一铁磁层的厚度 - 磁矩乘积的厚度 - 磁矩积。 第二铁磁层的易轴基本上平行于第一铁磁层的容易轴。

公开(公告)号：US06801410B2

公开(公告)日：2004-10-05

申请号：US10247124

申请日：2002-09-19

Applicant: Song Sheng Xue ,  Paul E. Anderson ,  Patrick Joseph Ryan

Inventor： Song Sheng Xue ,  Paul E. Anderson ,  Patrick Joseph Ryan

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3146 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929

Abstract: A transducing head according to the present invention includes a pair of electrodes, a pair of biasing elements and a magnetoresistive sensor. The magnetoresistive sensor is positioned between the pair of electrodes. The magnetoresistive sensor includes a pair of flux guides and a free layer positioned substantially co-planar with and between the pair of flux guides. The pair of electrodes are for providing a sense current to the free layer in a direction substantially perpendicular to a plane of the free layer. The pair of biasing elements are positioned on opposing sides of the magnetoresistive sensor for providing longitudinal bias to the free layer.

Abstract translation: 根据本发明的转换头包括一对电极，一对偏置元件和磁阻传感器。 磁阻传感器位于一对电极之间。 磁阻传感器包括一对磁通引导件和与该对通量引导件之间基本上共平面的自由层。 该对电极用于在基本上垂直于自由层的平面的方向上向自由层提供感测电流。 一对偏置元件位于磁阻传感器的相对侧上，用于向自由层提供纵向偏置。

公开(公告)号：US06801409B2

公开(公告)日：2004-10-05

申请号：US09952725

申请日：2001-09-14

Applicant: Richard P. Michel ,  Mark T. Kief ,  Dehua Han ,  Venkateswara R. Inturi ,  Vladyslav A. Vas'ko

Inventor： Richard P. Michel ,  Mark T. Kief ,  Dehua Han ,  Venkateswara R. Inturi ,  Vladyslav A. Vas'ko

IPC: G11B539

CPC classification number: G11B5/3903 ,  G11B5/11 ,  G11B5/115 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/313 ,  Y10T29/49046

Abstract: A read head shield having improved stability includes a ferromagnetic (FM) layer and an anti-ferromagnetic (AFM) layer adjacent the FM layer. The FM layer has a patterned shape and a domain configuration that is defined by a plurality of local magnetic domains that are stabilized in accordance with the patterned shape. The AFM layer is annealed to imprint thereon the stabilized local magnetic domains of the FM layer. The AFM layer operates to increase the stability of the domain configuration of the FM layer thereby providing improved resistance to domain configuration shift caused by the application of a strong magnetic field.

Abstract translation: 具有改进的稳定性的读头屏蔽包括邻近FM层的铁磁（FM）层和反铁磁（AFM）层。 FM层具有由根据图案形状稳定的多个局部磁畴限定的图案形状和畴结构。 对AFM层进行退火以在其上压印FM层的稳定的局部磁畴。 AFM层操作以增加FM层的畴结构的稳定性，从而提供由施加强磁场引起的对域配置位移的改进的阻力。

公开(公告)号：US06795280B1

公开(公告)日：2004-09-21

申请号：US09441901

申请日：1999-11-17

Applicant: Dian Song ,  Nurul Amin ,  Sining Mao

Inventor： Dian Song ,  Nurul Amin ,  Sining Mao

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

Abstract: A method and apparatus for a recording head using a spin-dependent tunneling (SDT) junction. The SDT junction utilizes an aluminum oxide tunnel barrier. The tunnel barrier can be formed to a thickness comparable with a typical Cu spacer layer on a spin valve. With the SDT junction, current is applied perpendicular to the plane of the film. The SDT junctions can have high magneto-resistance up to 40%. The magnetoresistive qualities of a head design incorporating the SDT junction are not directly related to head resistance, head geometry, bias current and film thickness. The method can include forming a spin tunnel barrier by fashioning a stack into a bottom electrode, defining a junction, depositing a layer of insulator, performing a photoprocess, depositing an upper electrode layer and lifting off the top electrode layer to define the electrode. The stack can include a pinned layer, a barrier layer and a free layer. The pinned layer can include NiFe. The barrier layer can include AlOx. The free layer can include Co. The junction can be defined with an ion mill and the insulator can include Al2O3. In addition, the top electrode layer can include Cu.

Abstract translation: 一种使用自旋相关隧道（SDT）结的记录头的方法和装置。 SDT连接处使用氧化铝隧道屏障。 隧道势垒可以形成为与自旋阀上的典型Cu间隔层相当的厚度。 使用SDT结，电流垂直于膜的平面施加。 SDT结可以具有高达40％的高磁阻。 结合SDT结的头部设计的磁阻性质与磁头电阻，磁头几何形状，偏置电流和膜厚度无直接关系。 该方法可以包括通过将堆叠形成底部电极形成自旋隧道势垒，限定结，沉积绝缘体层，执行光电处理，沉积上部电极层和提起顶部电极层以限定电极。 堆叠可以包括钉扎层，阻挡层和自由层。 钉扎层可以包括NiFe。 阻挡层可以包括AlOx。 自由层可以包括公司。接合点可以用离子磨机定义，绝缘体可以包括Al2O3。 此外，顶部电极层可以包括Cu。

公开(公告)号：US06788501B2

公开(公告)日：2004-09-07

申请号：US10254411

申请日：2002-09-24

Applicant: Hardayal Singh Gill

Inventor： Hardayal Singh Gill

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49044

Abstract: A magnetic head having a sensor with a free layer, a spacer layer coupled to the free layer, and a pinned layer coupled to the spacer layer. Each layer has an active portion defined between its end portions. Leads are coupled to the sensor, with each lead overlapping the end portions of the layers. The pinned layer is operative to substantially pin magnetic moments of the end portions of the free layer. The magnetic moment of the active portion of the pinned layer is oxidized to reduce its magnetic moment, allowing the magnetic moment of the active portion of the free layer to spin freely.

Abstract translation: 一种具有自由层的传感器，耦合到自由层的间隔层和耦合到间隔层的钉扎层的磁头。 每个层具有限定在其端部之间的有效部分。 引线耦合到传感器，每个引线与层的端部重叠。 钉扎层可操作以基本上固定自由层端部的磁矩。 被钉扎层的活性部分的磁矩被氧化以减小其磁矩，允许自由层的有效部分的磁矩自由旋转。

公开(公告)号：US06785102B2

公开(公告)日：2004-08-31

申请号：US10125941

申请日：2002-04-18

Applicant: James Mac Freitag ,  Hardayal Singh Gill ,  Mustafa Pinarbasi

Inventor： James Mac Freitag ,  Hardayal Singh Gill ,  Mustafa Pinarbasi

IPC: G11B539

CPC classification number: B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967

Abstract: A spin valve sensor includes a free layer structure which is located between first and second spacer layers and the first and second spacer layers are located between first and second AP pinned layer structures. Each of the AP pinned layer structures has first and second AP pinned layers with the first AP pinned layer of the first AP pinned layer structure interfacing the first spacer layer and the first AP pinned layer of the second AP pinned layer structure interfacing the second spacer layer. The magnetic thickness of each of the first AP pinned layers is either greater or less than the magnetic thickness of either of the second AP pinned layers of the first and second AP pinned layer structures so that a magnetic field oriented perpendicular to an air bearing surface (ABS) of the sensor sets the magnetic moments of the first and second AP pinned layer structures in-phase so that changes in resistances of the sensor upon rotation of a magnetic moment of the free layer structure is additive.

Abstract translation: 自旋阀传感器包括位于第一和第二间隔层之间的自由层结构，并且第一和第二间隔层位于第一和第二AP钉扎层结构之间。 AP被钉扎层结构中的每一个具有第一和第二AP钉扎层，其中第一AP钉扎层结构的第一AP钉扎层与第一间隔层和第二AP钉扎层结构的第一AP钉扎层相接， 。 第一AP钉扎层中的每一个的磁性厚度大于或小于第一和第二AP钉扎层结构的第二AP钉扎层中的任一个的磁性厚度，使得垂直于空气支承表面（ ABS）将第一和第二AP钉扎层结构的磁矩同相设置，使得自由层结构的磁矩旋转时传感器的电阻的变化是相加的。

公开(公告)号：US06778363B2

公开(公告)日：2004-08-17

申请号：US10075286

申请日：2002-02-15

Applicant: Kenichi Meguro ,  Hisashi Kimura ,  Katsuro Watanabe

Inventor： Kenichi Meguro ,  Hisashi Kimura ,  Katsuro Watanabe

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49128 ,  Y10T29/49155

Abstract: There is provided a magnetoresistive head which can realize high sensitivity and low noise even when the reading track is being reduced. Longitudinal biasing is performed to a ferromagnetic free layer whose magnetization is rotated according to an external magnetic field by providing unidirectional magnetic anisotropy by exchange coupling to an antiferromagnetic layer. A hard magnetic film is arranged at the edge of a magnetoresistive film to reduce an effective reading track width.

Abstract translation: 提供了一种磁阻头，即使在读磁道被减小时也能实现高灵敏度和低噪声。 对铁磁自由层进行纵向偏置，其磁化通过与反铁磁层的交换耦合提供单向磁各向异性而根据外部磁场旋转。 在磁阻膜的边缘处布置硬磁膜以减少有效的读取磁道宽度。

公开(公告)号：US06775110B1

公开(公告)日：2004-08-10

申请号：US09076111

申请日：1998-05-12

Applicant: Kazuhiko Hayashi ,  Shigeru Mori ,  Masafumi Nakada

Inventor： Kazuhiko Hayashi ,  Shigeru Mori ,  Masafumi Nakada

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F1/0572 ,  H01F10/30 ,  H01F10/3268 ,  H01F10/3295

Abstract: A magnetoresistance effect device has the basic structure of substrate/sublayer/NiFe layer/CoFe layer/non-magnetic layer/fixed magnetic layer/antiferromagnetic layer. The sublayer may be Ta at a film thickness of not less than 0.2 nm but less than 3.0 nm, or Hf at a film thickness of not less than 0.2 nm but not greater than 1.5 nm, or Zr at a film thickness of not less than 0.2 nm but not greater than 2.5 nm. It is permissible to use only an NiFe layer instead of the NiFe layer/CoFe layer.

Abstract translation: 磁阻效应器件具有基板/子层/ NiFe层/ CoFe层/非磁性层/固定磁性层/反铁磁层的基本结构。 子层可以是不小于0.2nm但小于3.0nm的膜厚度的Ta或膜厚度不小于0.2nm但不大于1.5nm的Hf，或者膜厚度不小于 0.2nm但不大于2.5nm。 可以仅使用NiFe层代替NiFe层/ CoFe层。