知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

104 条记录 (耗时 0.025 秒)

    Bias Layer and Shield Biasing Design
    2.
    发明申请
    Bias Layer and Shield Biasing Design 审中-公开

    公开(公告)号：US20170084296A1

    公开(公告)日：2017-03-23

    申请号：US15364304

    申请日：2016-11-30

    申请人： Headway Technologies, Inc.

    发明人： Glen Garfunkel ,  Yan Wu ,  Junjie Quan ,  Yewhee Chye

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3912 ,  G11B5/3932 ,  G11B5/3951 ,  G11B5/3954 ,  G11B5/3974 ,  G11B5/4886

    摘要： A read head is longitudinally biased unidirectionally by laterally abutting soft magnetic layers or multilayers. The soft magnetic layers are themselves magnetically stabilized by layers of antiferromagnetic material that are exchange coupled to them. The same layers of antiferromagnetic materials can be used to stabilize a unidirectional anisotropy of an overhead shield by means of exchange coupling. By including the antiferromagnetic material layer within the patterned biasing structure itself, an additional layer of antiferromagnetic material that normally covers the entire sensor structure is eliminated. The elimination of an entire layer is also advantageous for reducing the inter-sensor spacing in a TDMR (two dimensional magnetic recording) configuration where two sensor are vertically stacked on top of each other.

    APPARATUS AND METHOD HAVING TDMR READER TO READER SHUNTS
    3.
    发明申请
    APPARATUS AND METHOD HAVING TDMR READER TO READER SHUNTS 审中-公开
    具有TDMR读取器到读取器的装置和方法

    公开(公告)号：US20160351213A1

    公开(公告)日：2016-12-01

    申请号：US15234933

    申请日：2016-08-11

    申请人： Western Digital (Fremont), LLC

    发明人： STEVEN C. RUDY ,  LUC VING CHUNG ,  CHRISTOPHER L. BEAUDRY ,  SHAOPING LI ,  JIMMY J. SHEN ,  GUOLUN HAO ,  YINGBO ZHANG

    IPC分类号： G11B5/31 ,  G11B5/127

    CPC分类号： G11B5/3163 ,  G11B5/115 ,  G11B5/1272 ,  G11B5/29 ,  G11B5/3912 ,  G11B5/3951 ,  G11B5/3977 ,  G11B5/4886 ,  G11B5/4976 ,  G11B5/6094 ,  G11B33/1493 ,  Y10T29/49032

    摘要： A method of making a magnetic head is provided. The method includes forming a first read sensor and a first electrical contact formed with a first shunt region. The method further includes forming a first mid-shield layer on the first read sensor, the first mid-shield layer being electrically connected to the first electrical contact. Additionally the method also includes forming a second mid-shield layer over the first mid-shield layer. Further, the method also includes forming a second read sensor over the second mid-shield layer, the second read sensor having a second electrical contact formed with a second shunt region electrically connected to the first shunt region.

    摘要翻译： 提供一种制造磁头的方法。 该方法包括形成第一读取传感器和形成有第一分流区域的第一电触头。 该方法还包括在第一读取传感器上形成第一中间屏蔽层，第一中间屏蔽层电连接到第一电触点。 另外，该方法还包括在第一中间屏蔽层之上形成第二中间屏蔽层。 此外，该方法还包括在第二中间屏蔽层上形成第二读取传感器，第二读取传感器具有形成有电连接到第一分流区域的第二分流区域的第二电触点。

    DUAL READER STRUCTURE
    4.
    发明申请
    DUAL READER STRUCTURE 有权
    双读结构

    公开(公告)号：US20150371670A1

    公开(公告)日：2015-12-24

    申请号：US14839489

    申请日：2015-08-28

    申请人： Seagate Technology LLC

    发明人： Victor Boris Sapozhnikov ,  Harry Edelman ,  Mohammed Sharia Ullah Patwari

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3948 ,  G11B5/115 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3951 ,  G11B5/3954 ,  G11B5/398 ,  G11B5/4886 ,  G11B2005/3996

    摘要： Implementations described and claimed herein provide a stacked dual reader with a bottom sensor stack and a top sensor stack separated by a top mid-shield and a bottom mid-shield, and a pre-amplifier circuit comprising a top lead connected to the top mid-shield, configured to collect current flowing from the top mid-shield through the top sensor stack opposite a direction of current flowing from the bottom mid-shield to a bottom lead through the bottom sensor stack.

    摘要翻译： 本文描述和要求保护的实施例提供了具有底部传感器堆叠和由顶部中间屏蔽和底部中间屏蔽隔开的顶部传感器堆叠的堆叠双重读取器，以及包括顶部引线的前置放大器电路， 屏蔽件，被配置为收集从顶部中间屏蔽件流过顶部传感器堆叠的电流，该电流与从底部中间屏蔽件流过底部传感器堆叠的底部引线的电流方向相反。

    Shield designed for middle shields in a multiple sensor array
    7.
    发明授权
    Shield designed for middle shields in a multiple sensor array 有权
    屏蔽设计用于多个传感器阵列中的中间屏蔽

    公开(公告)号：US09042058B1

    公开(公告)日：2015-05-26

    申请号：US14097157

    申请日：2013-12-04

    申请人： Western Digital Technologies, Inc.

    发明人： Shaoping Li ,  Gerardo A. Bertero ,  Michael L. Mallary ,  Guanxiong Li

    IPC分类号： G11B5/39 ,  G11B5/60 ,  G11B5/29

    CPC分类号： G11B5/3912 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3951 ,  G11B5/3961 ,  G11B5/397 ,  G11B2005/3996

    摘要： A method and system provide a magnetic transducer having an air-bearing surface (ABS). The method provides a first read sensor stack and defines a first read sensor in a stripe height direction from the first read sensor stack. The stripe height direction is perpendicular to the ABS. A shield is provided on the first read sensor stack and in a down track direction from the first read sensor stack. A second read sensor stack is provided. The shield is between the first read sensor and the second read sensor stack in the down track direction. Both the first read sensor and the second read sensor are defined from the first read sensor stack and from the second read sensor stack, respectively, in a cross-track direction. The cross-track direction is substantially perpendicular to the down track direction and substantially perpendicular to the stripe height direction.

    摘要翻译： 一种方法和系统提供具有空气轴承表面（ABS）的磁换能器。 该方法提供了第一读取传感器堆栈并且定义了来自第一读取传感器堆叠的条带高度方向上的第一读取传感器。 条纹高度方向垂直于ABS。 在第一读取传感器堆叠上并且沿着从第一读取传感器堆叠的下行轨道方向设置屏蔽。 提供了第二个读取传感器堆栈。 屏蔽在下行轨道方向上位于第一读取传感器和第二读取传感器堆叠之间。 第一读取传感器和第二读取传感器分别从第一读取传感器堆叠和第二读取传感器堆栈在交叉轨道方向上定义。 交叉轨道方向基本上垂直于向下轨道方向并且基本上垂直于条带高度方向。

    METHOD OF MANUFACTURING A MAGNETIC SENSOR WITH TILTED MAGNETORESISTIVE STRUCTURES
    9.
    发明申请
    METHOD OF MANUFACTURING A MAGNETIC SENSOR WITH TILTED MAGNETORESISTIVE STRUCTURES 失效
    制造具有倾斜磁阻结构的磁传感器的方法

    公开(公告)号：US20080217288A1

    公开(公告)日：2008-09-11

    申请号：US12106160

    申请日：2008-04-18

    申请人： Marcus Breuer ,  Guenther Crolly ,  Michael Haag ,  Manfred Jung ,  Thorsten Muehge ,  Johannes Paul ,  Joerg Sauerwein ,  Rolf Schaefer ,  Alexandra Welzel

    发明人： Marcus Breuer ,  Guenther Crolly ,  Michael Haag ,  Manfred Jung ,  Thorsten Muehge ,  Johannes Paul ,  Joerg Sauerwein ,  Rolf Schaefer ,  Alexandra Welzel

    IPC分类号： B05D5/12 ,  B44C1/22

    CPC分类号： G01R33/0206 ,  G11B5/3909 ,  G11B5/3951 ,  G11B2005/3996

    摘要： A method of manufacturing a magnetic field sensor device in one embodiment includes applying a mask on a substrate, performing a wet etching procedure on the substrate for generating at least a first groove having tilted side walls, and depositing at least one layer of magnetoresistive material onto a section of the surface of at least a first tilted side wall of the groove. A method of manufacturing a magnetic field sensor device on a substrate having a plurality of tilted planar sections, each of the tilted planar sections having a surface normal angled with respect to a surface normal of the substrate is also provided. The method includes depositing a magnetoresistive layered structure positioned at each of the tilted planar sections of the substrate, wherein the tilted planar sections are oriented such that a direction of an applied magnetic field in at least one of an x-, y- and z-direction relative to the substrate is detectable based on field-induced resistance changes of the magnetoresistive layered structures.

    摘要翻译： 在一个实施例中制造磁场传感器装置的方法包括在衬底上施加掩模，在衬底上执行湿蚀刻工艺，以产生至少具有倾斜侧壁的第一凹槽，并且将至少一层磁阻材料沉积到 凹槽的至少第一倾斜侧壁的表面的一部分。 还提供了一种在具有多个倾斜平面部分的基板上制造磁场传感器装置的方法，每个倾斜平面部分具有相对于基板的表面法线成一定角度的表面。 该方法包括沉积位于基板的每个倾斜平面部分处的磁阻分层结构，其中倾斜的平面部分被定向成使得x，y和z轴中的至少一个中施加的磁场的方向， 基于磁阻分层结构的场致电阻变化可以检测相对于衬底的方向。