Method of manufacturing a magnetic sensor with tilted magnetoresistive structures
    1.
    发明授权
    Method of manufacturing a magnetic sensor with tilted magnetoresistive structures 失效
    制造具有倾斜磁阻结构的磁传感器的方法

    公开(公告)号:US08110119B2

    公开(公告)日:2012-02-07

    申请号:US12106160

    申请日:2008-04-18

    CPC classification number: G01R33/0206 G11B5/3909 G11B5/3951 G11B2005/3996

    Abstract: A method of manufacturing a magnetic field sensor device in one embodiment includes applying a mask on a substrate, performing a wet etching procedure on the substrate for generating at least a first groove having tilted side walls, and depositing at least one layer of magnetoresistive material onto a section of the surface of at least a first tilted side wall of the groove. A method of manufacturing a magnetic field sensor device on a substrate having a plurality of tilted planar sections, each of the tilted planar sections having a surface normal angled with respect to a surface normal of the substrate is also provided. The method includes depositing a magnetoresistive layered structure positioned at each of the tilted planar sections of the substrate, wherein the tilted planar sections are oriented such that a direction of an applied magnetic field in at least one of an x-, y- and z-direction relative to the substrate is detectable based on field-induced resistance changes of the magnetoresistive layered structures.

    Abstract translation: 在一个实施例中制造磁场传感器装置的方法包括在衬底上施加掩模,在衬底上执行湿蚀刻工艺,以产生至少具有倾斜侧壁的第一凹槽,并且将至少一层磁阻材料沉积到 凹槽的至少第一倾斜侧壁的表面的一部分。 还提供了一种在具有多个倾斜平面部分的基板上制造磁场传感器装置的方法,每个倾斜平面部分具有相对于基板的表面法线成一定角度的表面。 该方法包括沉积位于基板的每个倾斜平面部分处的磁阻分层结构,其中倾斜的平面部分被定向成使得x,y和z轴中的至少一个中施加的磁场的方向, 基于磁阻分层结构的场致电阻变化可以检测相对于衬底的方向。

    Magnetic sensor with offset magnetic field
    3.
    发明授权
    Magnetic sensor with offset magnetic field 失效
    具有偏移磁场的磁传感器

    公开(公告)号:US07710113B2

    公开(公告)日:2010-05-04

    申请号:US11738484

    申请日:2007-04-21

    CPC classification number: G01R33/09

    Abstract: A method, a magnetic field sensor, and an electronic device measure and determine the magnitude and/or the direction of a magnetic field. The magnetic sensor is based on at least a first magnetoresistive-layered structure having an electric resistance depending on the magnitude of the magnetic field. The magnetic sensor generates at least a first offset magnetic field. The magnitude and the direction of the offset magnetic field can be modified to compensate the magnetic field. The electric resistance of the magnetoresistive-layered structure depends on the superposition of magnetic field and offset magnetic field. A maximum electric resistance indicates that the magnetic field is compensated by the offset magnetic field. In this case the magnitude of the magnetic field corresponds to the magnitude of the offset magnetic field, and the direction of the magnetic field is given by the reversed direction of the offset magnetic field.

    Abstract translation: 方法,磁场传感器和电子设备测量和确定磁场的大小和/或方向。 磁传感器至少基于具有取决于磁场强度的电阻的第一磁阻分层结构。 磁传感器产生至少第一偏移磁场。 可以改变偏移磁场的大小和方向以补偿磁场。 磁阻分层结构的电阻取决于磁场和偏移磁场的叠加。 最大电阻表示磁场被偏移磁场补偿。 在这种情况下,磁场的大小对应于偏移磁场的大小,并且磁场的方向由偏移磁场的反方向给出。

    METHOD OF MANUFACTURING A MAGNETIC SENSOR WITH TILTED MAGNETORESISTIVE STRUCTURES
    5.
    发明申请
    METHOD OF MANUFACTURING A MAGNETIC SENSOR WITH TILTED MAGNETORESISTIVE STRUCTURES 失效
    制造具有倾斜磁阻结构的磁传感器的方法

    公开(公告)号:US20080217288A1

    公开(公告)日:2008-09-11

    申请号:US12106160

    申请日:2008-04-18

    CPC classification number: G01R33/0206 G11B5/3909 G11B5/3951 G11B2005/3996

    Abstract: A method of manufacturing a magnetic field sensor device in one embodiment includes applying a mask on a substrate, performing a wet etching procedure on the substrate for generating at least a first groove having tilted side walls, and depositing at least one layer of magnetoresistive material onto a section of the surface of at least a first tilted side wall of the groove. A method of manufacturing a magnetic field sensor device on a substrate having a plurality of tilted planar sections, each of the tilted planar sections having a surface normal angled with respect to a surface normal of the substrate is also provided. The method includes depositing a magnetoresistive layered structure positioned at each of the tilted planar sections of the substrate, wherein the tilted planar sections are oriented such that a direction of an applied magnetic field in at least one of an x-, y- and z-direction relative to the substrate is detectable based on field-induced resistance changes of the magnetoresistive layered structures.

    Abstract translation: 在一个实施例中制造磁场传感器装置的方法包括在衬底上施加掩模,在衬底上执行湿蚀刻工艺,以产生至少具有倾斜侧壁的第一凹槽,并且将至少一层磁阻材料沉积到 凹槽的至少第一倾斜侧壁的表面的一部分。 还提供了一种在具有多个倾斜平面部分的基板上制造磁场传感器装置的方法,每个倾斜平面部分具有相对于基板的表面法线成一定角度的表面。 该方法包括沉积位于基板的每个倾斜平面部分处的磁阻分层结构,其中倾斜的平面部分被定向成使得x,y和z轴中的至少一个中施加的磁场的方向, 基于磁阻分层结构的场致电阻变化可以检测相对于衬底的方向。

    Magnetic sensor with offset magnetic field
    7.
    发明授权
    Magnetic sensor with offset magnetic field 失效
    具有偏移磁场的磁传感器

    公开(公告)号:US07504824B2

    公开(公告)日:2009-03-17

    申请号:US11256324

    申请日:2005-10-21

    CPC classification number: G01R33/09

    Abstract: A method, a magnetic field sensor, and an electronic device measure and determine the magnitude and/or the direction of a magnetic field. The magnetic sensor is based on at least a first magnetoresistive-layered structure having an electric resistance depending on the magnitude of the magnetic field. The magnetic sensor generates at least a first offset magnetic field. The magnitude and the direction of the offset magnetic field can be modified to compensate the magnetic field. The electric resistance of the magnetoresistive-layered structure depends on the superposition of magnetic field and offset magnetic field. A maximum electric resistance indicates that the magnetic field is compensated by the offset magnetic field. In this case the magnitude of the magnetic field corresponds to the magnitude of the offset magnetic field, and the direction of the magnetic field is given by the reversed direction of the offset magnetic field.

    Abstract translation: 方法,磁场传感器和电子设备测量和确定磁场的大小和/或方向。 磁传感器至少基于具有取决于磁场强度的电阻的第一磁阻分层结构。 磁传感器产生至少第一偏移磁场。 可以修改偏移磁场的大小和方向以补偿磁场。 磁阻分层结构的电阻取决于磁场和偏移磁场的叠加。 最大电阻表示磁场被偏移磁场补偿。 在这种情况下,磁场的大小对应于偏移磁场的大小,并且磁场的方向由偏移磁场的反方向给出。

    Magnetic sensor with offset magnetic field
    8.
    发明申请
    Magnetic sensor with offset magnetic field 失效
    具有偏移磁场的磁传感器

    公开(公告)号:US20080054897A1

    公开(公告)日:2008-03-06

    申请号:US11738484

    申请日:2007-04-21

    CPC classification number: G01R33/09

    Abstract: A method, a magnetic field sensor, and an electronic device measure and determine the magnitude and/or the direction of a magnetic field. The magnetic sensor is based on at least a first magnetoresistive-layered structure having an electric resistance depending on the magnitude of the magnetic field. The magnetic sensor generates at least a first offset magnetic field. The magnitude and the direction of the offset magnetic field can be modified to compensate the magnetic field. The electric resistance of the magnetoresistive-layered structure depends on the superposition of magnetic field and offset magnetic field. A maximum electric resistance indicates that the magnetic field is compensated by the offset magnetic field. In this case the magnitude of the magnetic field corresponds to the magnitude of the offset magnetic field, and the direction of the magnetic field is given by the reversed direction of the offset magnetic field.

    Abstract translation: 方法,磁场传感器和电子设备测量和确定磁场的大小和/或方向。 磁传感器至少基于具有取决于磁场强度的电阻的第一磁阻分层结构。 磁传感器产生至少第一偏移磁场。 可以改变偏移磁场的大小和方向以补偿磁场。 磁阻分层结构的电阻取决于磁场和偏移磁场的叠加。 最大电阻表示磁场被偏移磁场补偿。 在这种情况下,磁场的大小对应于偏移磁场的大小,并且磁场的方向由偏移磁场的反方向给出。

    Magnetic sensor with offset magnetic field

    公开(公告)号:US20060087318A1

    公开(公告)日:2006-04-27

    申请号:US11256324

    申请日:2005-10-21

    CPC classification number: G01R33/09

    Abstract: A method, a magnetic field sensor, and an electronic device measure and determine the magnitude and/or the direction of a magnetic field. The magnetic sensor is based on at least a first magnetoresistive-layered structure having an electric resistance depending on the magnitude of the magnetic field. The magnetic sensor generates at least a first offset magnetic field. The magnitude and the direction of the offset magnetic field can be modified to compensate the magnetic field. The electric resistance of the magnetoresistive-layered structure depends on the superposition of magnetic field and offset magnetic field. A maximum electric resistance indicates that the magnetic field is compensated by the offset magnetic field. In this case the magnitude of the magnetic field corresponds to the magnitude of the offset magnetic field, and the direction of the magnetic field is given by the reversed direction of the offset magnetic field.

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