公开(公告)号：US08981559B2

公开(公告)日：2015-03-17

申请号：US13532402

申请日：2012-06-25

Applicant: Chun-Lei Hsu ,  Chung-Shi Liu ,  De-Yuan Lu ,  Ming-Che Ho ,  Yu-Feng Chen

Inventor： Chun-Lei Hsu ,  Chung-Shi Liu ,  De-Yuan Lu ,  Ming-Che Ho ,  Yu-Feng Chen

IPC: H01L23/48 ,  H01L21/48 ,  H01L23/31 ,  H01L23/498 ,  H01L25/10 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L25/50 ,  H01L21/4857 ,  H01L23/3121 ,  H01L23/49811 ,  H01L23/49822 ,  H01L24/16 ,  H01L24/81 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/81 ,  H01L2224/81193 ,  H01L2224/81411 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81464 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1082 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15323 ,  H01L2924/15331 ,  H01L2924/15333 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/18161 ,  H01L2924/3651

Abstract: Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. In one embodiment, a PoP device includes a first packaged die and a second packaged die coupled to the first packaged die. Metal pillars are coupled to the first packaged die. The metal pillars have a first portion proximate the first packaged die and a second portion disposed over the first portion. Each of the metal pillars is coupled to a solder joint proximate the second packaged die.

Abstract translation: 封装封装（PoP）器件和封装半导体管芯的方法被公开。 在一个实施例中，PoP器件包括第一封装管芯和耦合到第一封装管芯的第二封装管芯。 金属柱连接到第一封装的模具。 金属支柱具有靠近第一封装模具的第一部分和设置在第一部分上的第二部分。 每个金属支柱都联接到靠近第二包装模具的焊接接头。

公开(公告)号：US08827695B2

公开(公告)日：2014-09-09

申请号：US12435861

申请日：2009-05-05

Applicant: Yi-Li Hsiao ,  Chen-Hua Yu ,  Jean Wang ,  Ming-che Ho ,  Chien-Ling Hwang ,  Jui-Pin Hung

Inventor： Yi-Li Hsiao ,  Chen-Hua Yu ,  Jean Wang ,  Ming-che Ho ,  Chien-Ling Hwang ,  Jui-Pin Hung

IPC: F27D15/00 ,  H01L21/677 ,  H01L21/67

CPC classification number: H01L21/67772 ,  H01L21/67017 ,  Y10S414/135

Abstract: A semiconductor manufacturing system, an interface system, a carrier, and a method for providing an ambient controlled environment is disclosed. The semiconductor manufacturing system comprises a plurality of process chambers; at least one interface system, wherein the interface system includes a first ambient control element; at least one carrier, wherein the carrier comprises a second ambient control element; and a control module coupled to the plurality of process chambers, the at least one interface system, and the at least one carrier.

Abstract translation: 公开了一种半导体制造系统，接口系统，载体和用于提供环境受控环境的方法。 半导体制造系统包括多个处理室; 至少一个接口系统，其中所述接口系统包括第一环境控制元件; 至少一个载体，其中载体包括第二环境控制元件; 以及耦合到所述多个处理室，所述至少一个接口系统和所述至少一个载体的控制模块。

公开(公告)号：US20130187277A1

公开(公告)日：2013-07-25

申请号：US13443556

申请日：2012-04-10

Applicant: Yu-Feng Chen ,  Chun-Hung Lin ,  Han-Ping Pu ,  Chih-Hang Tung ,  Kai-Chiang Wu ,  Ming-Che Ho

Inventor： Yu-Feng Chen ,  Chun-Hung Lin ,  Han-Ping Pu ,  Chih-Hang Tung ,  Kai-Chiang Wu ,  Ming-Che Ho

IPC: H01L23/48

CPC classification number: H01L24/13 ,  H01L23/488 ,  H01L24/02 ,  H01L24/05 ,  H01L24/10 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05111 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/10125 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13012 ,  H01L2224/13076 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A semiconductor die includes a crack stopper on an under-bump metallization (UBM) layer. The crack stopper is in the shape of hollow cylinder with at least two openings.

Abstract translation: 半导体管芯包括在凸块下金属化（UBM）层上的裂纹阻挡层。 裂缝止动器为具有至少两个开口的中空圆筒形状。

公开(公告)号：US20130127059A1

公开(公告)日：2013-05-23

申请号：US13299100

申请日：2011-11-17

Applicant: Chih-Wei Lai ,  Ming-Che Ho ,  Tzong-Hann Yang ,  Chien Rhone Wang ,  Chia-Tung Chang ,  Hung-Jui Kuo ,  Chung-Shi Liu

Inventor： Chih-Wei Lai ,  Ming-Che Ho ,  Tzong-Hann Yang ,  Chien Rhone Wang ,  Chia-Tung Chang ,  Hung-Jui Kuo ,  Chung-Shi Liu

IPC: H01L23/48 ,  H01L21/66 ,  G06F17/50

CPC classification number: G06F17/5077 ,  G06F17/5072 ,  H01L23/488 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/034 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05552 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1403 ,  H01L2224/14132 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029

Abstract: A device includes a plurality of connectors on a top surface of a package component. The plurality of connectors includes a first connector having a first lateral dimension, and a second connector having a second lateral dimension. The second lateral dimension is greater than the first lateral dimension. The first and the second lateral dimensions are measured in directions parallel to a major surface of the package component.

公开(公告)号：US20120286423A1

公开(公告)日：2012-11-15

申请号：US13556016

申请日：2012-07-23

Applicant: Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Cheng-Chung Lin ,  Hui-Jung Tsai ,  Zheng-Yi Lim

Inventor： Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Cheng-Chung Lin ,  Hui-Jung Tsai ,  Zheng-Yi Lim

IPC: H01L23/498

CPC classification number: H01L24/11 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/93 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11416 ,  H01L2224/11422 ,  H01L2224/11424 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/118 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11822 ,  H01L2224/11827 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13005 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/132 ,  H01L2224/13211 ,  H01L2224/13339 ,  H01L2224/13562 ,  H01L2224/13584 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/1379 ,  H01L2224/13794 ,  H01L2224/13809 ,  H01L2224/13813 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/13857 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/93 ,  H01L2225/06513 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2224/11 ,  H01L2924/00

Abstract: A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.

公开(公告)号：US09659796B2

公开(公告)日：2017-05-23

申请号：US12179347

申请日：2008-07-24

Applicant: Cheng Hsun Chan ,  Ming-Che Ho

Inventor： Cheng Hsun Chan ,  Ming-Che Ho

IPC: H01L21/67

CPC classification number: H01L21/67046 ,  H01L21/67051 ,  Y10T29/49002

Abstract: An apparatus for manufacturing integrated circuits on a wafer includes a polish pad; a rinse arm movable over the polish pad; and a post-polish cleaner. The post-polish cleaner includes a brush for brushing the wafer; and a nozzle aiming at the wafer. The apparatus further includes a mixer configured to mix an additive and de-ionized water; and a pipe connecting the mixer to at least one of the rinse arm and the nozzle.

公开(公告)号：US09159686B2

公开(公告)日：2015-10-13

申请号：US13443556

申请日：2012-04-10

Applicant: Yu-Feng Chen ,  Chun-Hung Lin ,  Han-Ping Pu ,  Chih-Hang Tung ,  Kai-Chiang Wu ,  Ming-Che Ho

Inventor： Yu-Feng Chen ,  Chun-Hung Lin ,  Han-Ping Pu ,  Chih-Hang Tung ,  Kai-Chiang Wu ,  Ming-Che Ho

IPC: H01L23/00 ,  H01L23/488

CPC classification number: H01L24/13 ,  H01L23/488 ,  H01L24/02 ,  H01L24/05 ,  H01L24/10 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05111 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/10125 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13012 ,  H01L2224/13076 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A semiconductor die includes a crack stopper on an under-bump metallization (UBM) layer. The crack stopper is in the shape of hollow cylinder with at least two openings.

Abstract translation: 半导体管芯包括在凸块下金属化（UBM）层上的裂纹阻挡层。 裂缝止动器为具有至少两个开口的中空圆筒形状。

公开(公告)号：US08865585B2

公开(公告)日：2014-10-21

申请号：US13546300

申请日：2012-07-11

Applicant: Meng-Wei Chou ,  Hung-Jui Kuo ,  Ming-Che Ho ,  Chung-Shi Liu

Inventor： Meng-Wei Chou ,  Hung-Jui Kuo ,  Ming-Che Ho ,  Chung-Shi Liu

IPC: H01L21/44

CPC classification number: H01L23/525 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/02331 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A method of forming post passivation interconnects comprises forming a passivation layer over a substrate, wherein a metal pad is embedded in the passivation layer, depositing a first dielectric layer on the passivation layer, applying a first patterning process to the first dielectric layer to form a first opening, forming a first seed layer over the first opening, filling the first opening with a conductive material, depositing a second dielectric layer on the first dielectric layer, applying a second patterning process to the second dielectric layer to form a second opening, forming an under bump metallization structure over the second opening and mounting an interconnect bump over the under bump metallization structure.

Abstract translation: 形成后钝化互连的方法包括在衬底上形成钝化层，其中金属焊盘嵌入钝化层中，在钝化层上沉积第一介电层，将第一图案化工艺应用于第一介电层以形成 第一开口，在第一开口上形成第一种子层，用导电材料填充第一开口，在第一介电层上沉积第二介电层，向第二介电层施加第二图案化工艺以形成第二开口，形成 在第二开口上方的凸块下金属化结构，并且在凸块下金属化结构之上安装互连凸块。

公开(公告)号：US08791579B2

公开(公告)日：2014-07-29

申请号：US13299100

申请日：2011-11-17

Applicant: Chih-Wei Lai ,  Ming-Che Ho ,  Tzong-Hann Yang ,  Chien Rhone Wang ,  Chia-Tung Chang ,  Hung-Jui Kuo ,  Chung-Shi Liu

Inventor： Chih-Wei Lai ,  Ming-Che Ho ,  Tzong-Hann Yang ,  Chien Rhone Wang ,  Chia-Tung Chang ,  Hung-Jui Kuo ,  Chung-Shi Liu

IPC: H01L23/52 ,  H01L23/48 ,  H01L23/485 ,  H01L23/495

CPC classification number: G06F17/5077 ,  G06F17/5072 ,  H01L23/488 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/034 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05552 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1403 ,  H01L2224/14132 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029

Abstract: A device includes a plurality of connectors on a top surface of a package component. The plurality of connectors includes a first connector having a first lateral dimension, and a second connector having a second lateral dimension. The second lateral dimension is greater than the first lateral dimension. The first and the second lateral dimensions are measured in directions parallel to a major surface of the package component.

Abstract translation: 一种装置包括在包装部件的顶表面上的多个连接器。 多个连接器包括具有第一横向尺寸的第一连接器和具有第二横向尺寸的第二连接器。 第二横向尺寸大于第一横向尺寸。 第一和第二横向尺寸在平行于包装部件的主表面的方向上测量。

公开(公告)号：US08703546B2

公开(公告)日：2014-04-22

申请号：US12784314

申请日：2010-05-20

Applicant: Chih-Wei Lin ,  Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu

Inventor： Chih-Wei Lin ,  Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu

IPC: H01L21/82 ,  H01L21/288

CPC classification number: H01L21/288 ,  C25D7/123 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03831 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11424 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/1181 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/93 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/1146

Abstract: A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature.

Abstract translation: 一种形成装置的方法包括进行第一电镀工艺以形成第一金属特征，并且在活化处理溶液中对第一金属特征的表面进行活化处理，其中活化处理溶液包括处理剂， 电离（DI）水。 在执行激活处理的步骤之后，执行第二电镀处理以形成第二金属特征并接触第一金属特征的表面。