Abstract:
A method to enable wafer result prediction includes collecting manufacturing data from various semiconductor manufacturing tools and metrology tools; choosing key parameters using an autokey method based on the manufacturing data; building a virtual metrology based on the key parameters; and predicting wafer results using the virtual metrology.
Abstract:
A device includes a plurality of connectors on a top surface of a package component. The plurality of connectors includes a first connector having a first lateral dimension, and a second connector having a second lateral dimension. The second lateral dimension is greater than the first lateral dimension. The first and the second lateral dimensions are measured in directions parallel to a major surface of the package component.
Abstract:
Methods and apparatus for performing end point determination. A method includes receiving a wafer into an etch tool chamber for performing an RIE etch; beginning the RIE etch to form vias in the wafer; receiving in-situ measurements of one or more physical parameters of the etch tool chamber that are correlated to the RIE etch process; providing a virtual metrology model for the RIE etch in the chamber; inputting the received in-situ measurements to the virtual metrology model for the RIE etch in the chamber; executing the virtual metrology model to estimate the current via depth; comparing the estimated current via depth to a target depth; and when the comparing indicates the current via depth is within a predetermined threshold of the target depth; outputting a stop signal. An apparatus for use with the method embodiment is disclosed.
Abstract:
An optical gas concentration sensor and method for measuring blood gas based on the light adsorption sensing technique are disclosed. The optical gas concentration sensor comprises a light source, a photo detector, and a gas filtering membrane for separating the indicator and a liquid. A gas in the liquid diffuses to the indicator through the gas filtering membrane so as to change the color of the indicator due to the chemical reaction occurred between the indicator and the gas. Then, the photo detector receives the light passing though the reacted indicator from the light source. The gas concentration is determined based on pH-sensitive absorbance spectrum of the indicator.
Abstract:
A method for improving within-wafer uniformity is provided. The method includes forming an electrical component by a first process step and a second process step, wherein the electrical component has a target electrical parameter. The method includes providing a first plurality of production tools for performing the first process step; providing a second plurality of production tools for performing the second process step; providing a wafer; performing the first process step on the wafer using one of the first plurality of production tools; and selecting a first route including a first production tool from the second plurality of production tools. A within-wafer uniformity of the target electrical parameter on the wafer manufactured by the first route is greater than a second route including a second production tool in the second plurality of production tools.
Abstract:
A method for dynamically managing a removable device includes the following steps: generating a device insertion interrupt to indicate that the removable device has been coupled to a connection interface when detecting an insert event corresponding to the removable device; clearing the device insertion interrupt before a processing mechanism corresponding to the connection interface handles the device insertion interrupt; and identifying a specification of the removable device to dynamically manage the removable device according to the specification; wherein when the specification corresponds to a first specification, a first management scheme is activated to manage the removable device, when the specification corresponds to a second specification, a second management scheme is activated to manage the removable device, and the first specification is different from the second specification.
Abstract:
A device includes a plurality of connectors on a top surface of a package component. The plurality of connectors includes a first connector having a first lateral dimension, and a second connector having a second lateral dimension. The second lateral dimension is greater than the first lateral dimension. The first and the second lateral dimensions are measured in directions parallel to a major surface of the package component.
Abstract:
Packaging methods, material dispensing methods and apparatuses, and automatic measurement systems are disclosed. In one embodiment, a method of packaging semiconductor devices includes coupling a second die to a top surface of a first die, dispensing a first amount of underfill material between the first die and the second die, and capturing an image of the underfill material. Based on the image captured, a second amount or no additional amount of underfill material is dispensed between the first die and the second die.
Abstract:
A system and method for controlling resistivity uniformity in a Copper trench structure by controlling the CMP process is provided. A preferred embodiment comprises a system and a method in which a plurality of CMP process recipes may be created comprising at least a slurry arm position. A set of metrological data for at least one layer of the semiconductor substrate may be estimated, and an optimum CMP process recipe may be selected based on the set of metrological data. The optimum CMP process recipe may be implemented on the semiconductor substrate.
Abstract:
A removal rate estimating method of a chemical mechanical polishing process under mixed products or mixed layers is provided, the estimation at least comprises: providing a pad removal rate of a specific product or layer; providing a removal rate adjustment; and summing up the pad removal rate of the specific product or layer and the removal rate adjustment as an estimated value of the removal rate of the chemical mechanical polishing process under mixed products or mixed layers. Wherein the value of the removal rate adjustment will be set to zero when the pad is replaced with a new one.