公开(公告)号：US20240332129A1

公开(公告)日：2024-10-03

申请号：US18620753

申请日：2024-03-28

Applicant: Adeia Semiconductor Bonding Technologies Inc

Inventor： Belgacem Haba ,  Cyprian Emeka Uzoh ,  Rajesh Katkar

IPC: H01L23/46 ,  H01L23/00 ,  H01L23/24 ,  H01L23/498

CPC classification number: H01L23/46 ,  H01L23/49822 ,  H01L24/08 ,  H01L23/24 ,  H01L2224/08225

Abstract: The present disclosure provides for integrated cooling systems including backside power delivery and methods of manufacturing the same. An integrated cooling assembly may include a device and a cold plate. The cold plate has a first side and an opposite second side, the first side having a recessed surface, sidewalls around the recessed surface that extend downwardly therefrom to define a cavity, and a plurality of support features disposed in the cavity. The first side of the cold plate is attached to a backside of the device to define a coolant channel therebetween. The cold plate includes a substrate, a dielectric layer disposed on a first surface of the substrate, a first conductive layer disposed between the first surface and the dielectric layer, a second conductive layer disposed on a second surface of the substrate, and thru-substrate interconnects connecting the first conductive layer to the second conductive layer.

公开(公告)号：US20240332128A1

公开(公告)日：2024-10-03

申请号：US18129567

申请日：2023-03-31

Applicant: Adeia Semiconductor Bonding Technologies Inc.

Inventor： Cyprian Emeka Uzoh ,  Belgacem Haba ,  Rajesh Katkar

IPC: H01L23/46 ,  H01L23/367 ,  H01L23/433

CPC classification number: H01L23/46 ,  H01L23/367 ,  H01L23/433

Abstract: Embodiments herein provide for device packages comprising an integrated cooling assembly and methods of cooling packaged devices. The integrated cooling assembly comprising a semiconductor device, a manifold attached to the semiconductor device, and a sonic transducer attached to the manifold. The manifold comprises a top portion and a waveguide extending downwardly from the top portion. The sonic transducer is attached to the top portion. The top portion, the waveguide, and a backside of the semiconductor device collectively define a coolant chamber volume therebetween.

公开(公告)号：US12100684B2

公开(公告)日：2024-09-24

申请号：US18147212

申请日：2022-12-28

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Liang Wang ,  Rajesh Katkar ,  Javier A. DeLaCruz ,  Arkalgud R. Sitaram

IPC: H01L23/00 ,  B81C1/00 ,  H01L23/10 ,  H01L23/498 ,  H01L23/528 ,  H01L23/532 ,  H05K1/11

CPC classification number: H01L24/29 ,  B81C1/00269 ,  B81C1/00293 ,  H01L23/10 ,  H01L23/49838 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53242 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  B81B2207/012 ,  B81C2203/035 ,  H01L23/562 ,  H01L24/80 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/06135 ,  H01L2224/06155 ,  H01L2224/06165 ,  H01L2224/06505 ,  H01L2224/08121 ,  H01L2224/08237 ,  H01L2224/29019 ,  H01L2224/8001 ,  H01L2224/80047 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80948 ,  H05K1/111 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05686 ,  H01L2924/053

Abstract: A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

公开(公告)号：US12057383B2

公开(公告)日：2024-08-06

申请号：US18148001

申请日：2022-12-29

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Belgacem Haba ,  Ilyas Mohammed ,  Rajesh Katkar ,  Gabriel Z. Guevara ,  Javier A. DeLaCruz ,  Shaowu Huang ,  Laura Willis Mirkarimi

IPC: H01L23/498 ,  H01G2/02 ,  H01G4/12 ,  H01G4/228 ,  H01G4/30 ,  H01G4/38 ,  H01G4/40 ,  H01L23/00 ,  H01L23/48 ,  H01L23/522 ,  H01L23/66 ,  H05K1/18 ,  H05K1/02

CPC classification number: H01L23/49838 ,  H01G2/02 ,  H01G4/1245 ,  H01G4/228 ,  H01G4/30 ,  H01G4/40 ,  H01L23/48 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5223 ,  H01L24/08 ,  H01L24/32 ,  H05K1/18 ,  H01G4/38 ,  H01L23/49816 ,  H01L23/66 ,  H01L24/05 ,  H01L24/80 ,  H01L2223/6666 ,  H01L2223/6672 ,  H01L2224/03845 ,  H01L2224/05005 ,  H01L2224/05017 ,  H01L2224/05556 ,  H01L2224/05567 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/0807 ,  H01L2224/08265 ,  H01L2224/16265 ,  H01L2224/32265 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80948 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19103 ,  H05K1/0231 ,  H05K1/185 ,  H05K2201/10015 ,  H01L2224/80203 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05686 ,  H01L2924/05442 ,  H01L2224/80948 ,  H01L2924/00014 ,  H01L2224/05556 ,  H01L2924/00012

Abstract: In various embodiments, a bonded structure is disclosed. The bonded structure can include an element and a passive electronic component having a first surface bonded to the element and a second surface opposite the first surface. The passive electronic component can comprise a first anode terminal bonded to a corresponding second anode terminal of the element and a first cathode terminal bonded to a corresponding second cathode terminal of the element. The first anode terminal and the first cathode terminal can be disposed on the first surface of the passive electronic component.

公开(公告)号：US20240249985A1

公开(公告)日：2024-07-25

申请号：US18628589

申请日：2024-04-05

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Rajesh Katkar ,  Laura Wills Mirkarimi ,  Bongsub Lee ,  Gaius Gillman Fountain, JR. ,  Cyprian Emeka Uzoh

IPC: H01L23/10 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L23/10 ,  H01L21/76807 ,  H01L21/76816 ,  H01L24/08 ,  H01L2924/01029

Abstract: A bonded structure is disclosed. The bonded structure includes a first element and a second element that is bonded to the first element along a bonding interface. The bonding interface has an elongate conductive interface feature and a nonconductive interface feature. The bonded structure also includes an integrated device that is coupled to or formed with the first element or the second element. The elongate conductive interface feature has a recess through a portion of a thickness of the elongate conductive interface feature. A portion of the nonconductive interface feature is disposed in the recess.

公开(公告)号：US20240120245A1

公开(公告)日：2024-04-11

申请号：US18545136

申请日：2023-12-19

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Rajesh Katkar ,  Liang Wang

IPC: H01L23/26 ,  B81B7/00 ,  B81C3/00 ,  H01L21/322 ,  H01L23/00 ,  H01L23/04 ,  H01L23/10

CPC classification number: H01L23/26 ,  B81B7/0038 ,  B81C3/001 ,  H01L21/3221 ,  H01L23/04 ,  H01L23/10 ,  H01L24/03 ,  H01L24/09

Abstract: A bonded structure is disclosed. The bonded structure can include a first element that has a first bonding surface. The bonded structure can further include a second element that has a second bonding surface. The first and second bonding surfaces are bonded to one another along a bonding interface. The bonded structure can also include an integrated device that is coupled to or formed with the first element or the second element. The bonded structure can further include a channel that is disposed along the bonding interface around the integrated device to define an effectively closed profile The bonded structure can also include a getter material that is disposed in the channel. The getter material is configured to reduce the diffusion of gas into an interior region of the bonded structure.

公开(公告)号：US20240113059A1

公开(公告)日：2024-04-04

申请号：US18539143

申请日：2023-12-13

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Cyprian Emeka Uzoh ,  Jeremy Alfred Theil ,  Rajesh Katkar ,  Guilian Gao ,  Laura Wills Mirkarimi

IPC: H01L23/00

CPC classification number: H01L24/08 ,  H01L24/80 ,  H01L2224/08057 ,  H01L2224/08147 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.

公开(公告)号：US20240079376A1

公开(公告)日：2024-03-07

申请号：US18461290

申请日：2023-09-05

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Dominik Suwito ,  Thomas Workman ,  Rajesh Katkar ,  Laura Wills Mirkarimi

IPC: H01L23/00

CPC classification number: H01L24/80 ,  H01L24/08 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80948

Abstract: Bonded structures and methods of direct hybrid bonding are disclosed. Non-conductive regions of two elements, such as dies or wafers, are first bonded together to form a bonded structure. Aligned conductive regions of the bonded structure, such as metal pads or traces, are then annealed to expand and bridge a gap between them. The anneal includes rapid thermal processing (RTP), such as with radiant heating. The bond interface between the first and second conductive features includes rapid growth structure(s) indicative of the inclusion of RTP in the anneal. Additional non-RTP anneal phases can also be employed.

公开(公告)号：US11842894B2

公开(公告)日：2023-12-12

申请号：US17129632

申请日：2020-12-21

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Rajesh Katkar ,  Belgacem Haba

IPC: H01L25/065 ,  H01L23/00

CPC classification number: H01L25/0657 ,  H01L24/06 ,  H01L24/26 ,  H01L24/93

Abstract: An element that is configured to bond to another element is disclosed. A first element that can include a first plurality of contact pads on a first surface. The first plurality of contact pads includes a first contact pad and a second contact pad that are spaced apart from one another. The first and second contact pads are electrically connected to one another for redundancy. The first element can be prepared for direct bonding. The first element can be bonded to a second element to form a bonded structure. The second element has a second plurality of contact pads on a second surface. At least one of the second plurality of contact pads is bonded and electrically connected to at least one of the first plurality of contact pads.

公开(公告)号：US20230317628A1

公开(公告)日：2023-10-05

申请号：US18087705

申请日：2022-12-22

Applicant: Adeia Semiconductor Bonding Technologies Inc.

Inventor： Belgacem Haba ,  Javier A. DeLaCruz ,  Rajesh Katkar ,  Arkalgud R. Sitaram

IPC: H01L23/552 ,  H01L23/00

CPC classification number: H01L23/552 ,  H01L23/573 ,  H01L24/05 ,  H01L24/83 ,  H01L24/29 ,  H01L2224/83896

Abstract: A bonded structure is disclosed. The bonded structure can include a semiconductor element comprising active circuitry and a first bonding layer. The bonded structure can include a protective element directly bonded to the semiconductor element without an adhesive along a bonding interface. The protective element can include an obstructive material disposed over the active circuitry and a second bonding layer on the obstructive material. The second bonding layer can be directly bonded to the first bonding layer without an adhesive. The obstructive material can be configured to obstruct external access to the active circuitry.