公开(公告)号：US11837596B2

公开(公告)日：2023-12-05

申请号：US18145261

申请日：2022-12-22

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Cyprian Emeka Uzoh ,  Arkalgud R. Sitaram ,  Paul Enquist

IPC: H01L25/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/683 ,  H01L25/065

CPC classification number: H01L25/50 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3081 ,  H01L21/561 ,  H01L21/683 ,  H01L23/3121 ,  H01L23/3135 ,  H01L25/0657 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1304 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/1434 ,  H01L2924/00012 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2924/1304 ,  H01L2924/00012

Abstract: In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.

公开(公告)号：US11670615B2

公开(公告)日：2023-06-06

申请号：US17131588

申请日：2020-12-22

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Liang Wang ,  Rajesh Katkar ,  Javier A. DeLaCruz ,  Arkalgud R. Sitaram

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/532 ,  H01L23/528 ,  H01L23/10 ,  B81C1/00 ,  H05K1/11

CPC classification number: H01L24/29 ,  B81C1/00269 ,  B81C1/00293 ,  H01L23/10 ,  H01L23/49838 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53242 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  B81B2207/012 ,  B81C2203/035 ,  H01L23/562 ,  H01L24/80 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/06135 ,  H01L2224/06155 ,  H01L2224/06165 ,  H01L2224/06505 ,  H01L2224/08121 ,  H01L2224/08237 ,  H01L2224/29019 ,  H01L2224/8001 ,  H01L2224/80047 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80948 ,  H05K1/111 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05686 ,  H01L2924/053

Abstract: A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

公开(公告)号：US11658173B2

公开(公告)日：2023-05-23

申请号：US17131329

申请日：2020-12-22

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Cyprian Emeka Uzoh ,  Arkalgud R. Sitaram ,  Paul Enquist

IPC: H01L25/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/683 ,  H01L25/065

CPC classification number: H01L25/50 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3081 ,  H01L21/561 ,  H01L21/683 ,  H01L23/3121 ,  H01L23/3135 ,  H01L25/0657 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1304 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/1434 ,  H01L2924/00012 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2924/1304 ,  H01L2924/00012

Abstract: In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.

公开(公告)号：US20230130580A1

公开(公告)日：2023-04-27

申请号：US18145282

申请日：2022-12-22

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Cyprian Emeka Uzoh ,  Arkalgud R. Sitaram ,  Paul Enquist

IPC: H01L25/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/683 ,  H01L25/065

Abstract: In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.

公开(公告)号：US12100684B2

公开(公告)日：2024-09-24

申请号：US18147212

申请日：2022-12-28

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Liang Wang ,  Rajesh Katkar ,  Javier A. DeLaCruz ,  Arkalgud R. Sitaram

IPC: H01L23/00 ,  B81C1/00 ,  H01L23/10 ,  H01L23/498 ,  H01L23/528 ,  H01L23/532 ,  H05K1/11

CPC classification number: H01L24/29 ,  B81C1/00269 ,  B81C1/00293 ,  H01L23/10 ,  H01L23/49838 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53242 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  B81B2207/012 ,  B81C2203/035 ,  H01L23/562 ,  H01L24/80 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/06135 ,  H01L2224/06155 ,  H01L2224/06165 ,  H01L2224/06505 ,  H01L2224/08121 ,  H01L2224/08237 ,  H01L2224/29019 ,  H01L2224/8001 ,  H01L2224/80047 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80948 ,  H05K1/111 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05686 ,  H01L2924/053

Abstract: A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

公开(公告)号：US20240145458A1

公开(公告)日：2024-05-02

申请号：US18399478

申请日：2023-12-28

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Cyprian Emeka Uzoh ,  Arkalgud R. Sitaram ,  Paul Enquist

IPC: H01L25/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L25/065

CPC classification number: H01L25/50 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3081 ,  H01L21/561 ,  H01L21/683 ,  H01L23/3121 ,  H01L23/3135 ,  H01L25/0657 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1304 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2924/3511

Abstract: In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.

公开(公告)号：US20230317628A1

公开(公告)日：2023-10-05

申请号：US18087705

申请日：2022-12-22

Applicant: Adeia Semiconductor Bonding Technologies Inc.

Inventor： Belgacem Haba ,  Javier A. DeLaCruz ,  Rajesh Katkar ,  Arkalgud R. Sitaram

IPC: H01L23/552 ,  H01L23/00

CPC classification number: H01L23/552 ,  H01L23/573 ,  H01L24/05 ,  H01L24/83 ,  H01L24/29 ,  H01L2224/83896

Abstract: A bonded structure is disclosed. The bonded structure can include a semiconductor element comprising active circuitry and a first bonding layer. The bonded structure can include a protective element directly bonded to the semiconductor element without an adhesive along a bonding interface. The protective element can include an obstructive material disposed over the active circuitry and a second bonding layer on the obstructive material. The second bonding layer can be directly bonded to the first bonding layer without an adhesive. The obstructive material can be configured to obstruct external access to the active circuitry.

公开(公告)号：US20230131849A1

公开(公告)日：2023-04-27

申请号：US18145261

申请日：2022-12-22

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Cyprian Emeka Uzoh ,  Arkalgud R. Sitaram ,  Paul Enquist

IPC: H01L25/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/683 ,  H01L25/065

Abstract: In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.

公开(公告)号：US20230361072A1

公开(公告)日：2023-11-09

申请号：US18147212

申请日：2022-12-28

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Liang Wang ,  Rajesh Katkar ,  Javier A. DeLaCruz ,  Arkalgud R. Sitaram

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/532 ,  H01L23/528 ,  H01L23/10 ,  B81C1/00

CPC classification number: H01L24/29 ,  H01L23/49838 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/528 ,  H01L23/10 ,  H01L24/08 ,  H01L24/06 ,  H01L24/05 ,  B81C1/00293 ,  B81C1/00269 ,  H01L2224/29019 ,  H01L2224/05571 ,  H01L2224/05686 ,  H01L24/80 ,  H01L2224/80896 ,  H01L2224/06165 ,  H01L2224/08121 ,  H01L2224/80047 ,  H01L2224/80948 ,  H01L23/562 ,  H01L2224/05551 ,  H01L2224/08237 ,  H01L2224/06505 ,  H01L2224/05555 ,  H01L2224/8001 ,  H01L2224/05552 ,  H05K1/111

Abstract: A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

公开(公告)号：US12113056B2

公开(公告)日：2024-10-08

申请号：US18145282

申请日：2022-12-22

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Cyprian Emeka Uzoh ,  Arkalgud R. Sitaram ,  Paul Enquist

IPC: H01L25/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L25/065

CPC classification number: H01L25/50 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3081 ,  H01L21/561 ,  H01L21/683 ,  H01L23/3121 ,  H01L23/3135 ,  H01L25/0657 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1304 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/1434 ,  H01L2924/00012 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2924/1304 ,  H01L2924/00012

Abstract: In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.