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公开(公告)号：US11817409B2
公开(公告)日：2023-11-14
申请号：US17563506
申请日：2021-12-28
Inventor： Belgacem Haba , Rajesh Katkar , Ilyas Mohammed , Javier A. DeLaCruz
CPC classification number: H01L24/08 , H01L21/78 , H01L24/80 , H01L24/94 , H01L2224/08146 , H01L2224/80006 , H01L2224/80895 , H01L2224/80896
Abstract: A bonded structure can include a first reconstituted element comprising a first element and having a first side comprising a first bonding surface and a second side opposite the first side. The first reconstituted element can comprise a first protective material disposed about a first sidewall surface of the first element. The bonded structure can comprise a second reconstituted element comprising a second element and having a first side comprising a second bonding surface and a second side opposite the first side. The first reconstituted element can comprise a second protective material disposed about a second sidewall surface of the second element. The second bonding surface of the first side of the second reconstituted element can be directly bonded to the first bonding surface of the first side of the first reconstituted element without an intervening adhesive along a bonding interface.
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公开(公告)号：US12136605B2
公开(公告)日：2024-11-05
申请号：US17320767
申请日：2021-05-14
Inventor： Guilian Gao , Gaius Gillman Fountain, Jr. , Laura Wills Mirkarimi , Rajesh Katkar , Ilyas Mohammed , Cyprian Emeka Uzoh
IPC: H01L23/522 , H01L21/768 , H01L23/00
Abstract: Layer structures for making direct metal-to-metal bonds at low temperatures and shorter annealing durations in microelectronics are provided. Example bonding interface structures enable direct metal-to-metal bonding of interconnects at low annealing temperatures of 150° C. or below, and at a lower energy budget. The example structures provide a precise metal recess distance for conductive pads and vias being bonded that can be achieved in high volume manufacturing. The example structures provide a vertical stack of conductive layers under the bonding interface, with geometries and thermal expansion features designed to vertically expand the stack at lower temperatures over the precise recess distance to make the direct metal-to-metal bonds. Further enhancements, such as surface nanotexture and copper crystal plane selection, can further actuate the direct metal-to-metal bonding at lowered annealing temperatures and shorter annealing durations.
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Patent Agency Ranking
公开(公告)号：US20230420399A1
公开(公告)日：2023-12-28
申请号：US18462691
申请日：2023-09-07
Inventor： Belgacem Haba , Rajesh Katkar , Ilyas Mohammed , Javier A. DeLaCruz
CPC classification number: H01L24/08 , H01L24/80 , H01L24/94 , H01L21/78 , H01L2224/80896 , H01L2224/08146 , H01L2224/80006 , H01L2224/80895
Abstract: A bonded structure can include a first reconstituted element comprising a first element and having a first side comprising a first bonding surface and a second side opposite the first side. The first reconstituted element can comprise a first protective material disposed about a first sidewall surface of the first element. The bonded structure can comprise a second reconstituted element comprising a second element and having a first side comprising a second bonding surface and a second side opposite the first side. The first reconstituted element can comprise a second protective material disposed about a second sidewall surface of the second element. The second bonding surface of the first side of the second reconstituted element can be directly bonded to the first bonding surface of the first side of the first reconstituted element without an intervening adhesive along a bonding interface.
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公开(公告)号：US20230420313A1
公开(公告)日：2023-12-28
申请号：US18463080
申请日：2023-09-07
Inventor： Rajesh Katkar , Liang Wang , Cyprian Emeka Uzoh , Shaowu Huang , Guilian Gao , Ilyas Mohammed
CPC classification number: H01L23/10 , B81C1/00333 , B81B7/0074 , B81B7/0032 , B81C1/00261 , H01L23/04 , H01L23/053 , H01L23/02 , B81C1/00269 , B81C2203/038
Abstract: Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.
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公开(公告)号：US12057383B2
公开(公告)日：2024-08-06
申请号：US18148001
申请日：2022-12-29
Inventor： Belgacem Haba , Ilyas Mohammed , Rajesh Katkar , Gabriel Z. Guevara , Javier A. DeLaCruz , Shaowu Huang , Laura Willis Mirkarimi
IPC: H01L23/498 , H01G2/02 , H01G4/12 , H01G4/228 , H01G4/30 , H01G4/38 , H01G4/40 , H01L23/00 , H01L23/48 , H01L23/522 , H01L23/66 , H05K1/18 , H05K1/02
CPC classification number: H01L23/49838 , H01G2/02 , H01G4/1245 , H01G4/228 , H01G4/30 , H01G4/40 , H01L23/48 , H01L23/49822 , H01L23/49827 , H01L23/5223 , H01L24/08 , H01L24/32 , H05K1/18 , H01G4/38 , H01L23/49816 , H01L23/66 , H01L24/05 , H01L24/80 , H01L2223/6666 , H01L2223/6672 , H01L2224/03845 , H01L2224/05005 , H01L2224/05017 , H01L2224/05556 , H01L2224/05567 , H01L2224/05576 , H01L2224/05647 , H01L2224/05686 , H01L2224/0807 , H01L2224/08265 , H01L2224/16265 , H01L2224/32265 , H01L2224/80203 , H01L2224/80895 , H01L2224/80896 , H01L2224/80948 , H01L2924/19011 , H01L2924/19041 , H01L2924/19103 , H05K1/0231 , H05K1/185 , H05K2201/10015 , H01L2224/80203 , H01L2924/00014 , H01L2224/05647 , H01L2924/00014 , H01L2224/05686 , H01L2924/05442 , H01L2224/80948 , H01L2924/00014 , H01L2224/05556 , H01L2924/00012
Abstract: In various embodiments, a bonded structure is disclosed. The bonded structure can include an element and a passive electronic component having a first surface bonded to the element and a second surface opposite the first surface. The passive electronic component can comprise a first anode terminal bonded to a corresponding second anode terminal of the element and a first cathode terminal bonded to a corresponding second cathode terminal of the element. The first anode terminal and the first cathode terminal can be disposed on the first surface of the passive electronic component.
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6.发明申请公开(公告)号：US20230118156A1
公开(公告)日：2023-04-20
申请号：US18069485
申请日：2022-12-21
Inventor： Guilian Gao , Gaius Gillman Fountain, JR. , Laura Wills Mirkarimi , Rajesh Katkar , Ilyas Mohammed , Cyprian Emeka Uzoh
IPC: H01L23/00 , H01L23/522 , H01L21/768
Abstract: Layer structures for making direct metal-to-metal bonds at low temperatures and shorter annealing durations in microelectronics are provided. Example bonding interface structures enable direct metal-to-metal bonding of interconnects at low annealing temperatures of 150° C. or below, and at a lower energy budget. The example structures provide a precise metal recess distance for conductive pads and vias being bonded that can be achieved in high volume manufacturing. The example structures provide a vertical stack of conductive layers under the bonding interface, with geometries and thermal expansion features designed to vertically expand the stack at lower temperatures over the precise recess distance to make the direct metal-to-metal bonds. Further enhancements, such as surface nanotexture and copper crystal plane selection, can further actuate the direct metal-to-metal bonding at lowered annealing temperatures and shorter annealing durations.
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公开(公告)号：US11626363B2
公开(公告)日：2023-04-11
申请号：US15856391
申请日：2017-12-28
Inventor： Belgacem Haba , Ilyas Mohammed , Rajesh Katkar , Gabriel Z. Guevara , Javier A. DeLaCruz , Shaowu Huang , Laura Wills Mirkarimi
IPC: H01L23/498 , H01G4/12 , H01G4/228 , H01G4/30 , H01G4/40 , H01L23/66 , H01L23/00 , H05K1/18 , H01L23/48 , H01G2/02 , H01L23/522 , H01G4/38 , H05K1/02
Abstract: In various embodiments, a bonded structure is disclosed. The bonded structure can include an element and a passive electronic component having a first surface bonded to the element and a second surface opposite the first surface. The passive electronic component can comprise a first anode terminal bonded to a corresponding second anode terminal of the element and a first cathode terminal bonded to a corresponding second cathode terminal of the element. The first anode terminal and the first cathode terminal can be disposed on the first surface of the passive electronic component.
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