公开(公告)号：US20240079205A1

公开(公告)日：2024-03-07

申请号：US18506923

申请日：2023-11-10

Applicant: ASML Netherlands B.V.

Inventor： Marco Jan-Jaco WIELAND

IPC: H01J37/26 ,  H01J37/12 ,  H01J37/28

CPC classification number: H01J37/265 ,  H01J37/12 ,  H01J37/28 ,  H01J2237/1205 ,  H01J2237/1207 ,  H01J2237/2817

Abstract: Assessment systems and methods are disclosed. In one arrangement, charged particles are directed in sub-beams arranged in a multi-beam towards a sample. A plurality of control electrodes define a control lens array. Each control lens in the control lens array is aligned with a sub-beam path of a respective sub-beam of the multi-beam and configured to operate on the respective sub-beam. A plurality of objective electrodes define an objective lens array that directs the sub-beams onto a sample. Objective lenses are aligned with a sub-beam path aligned with a respective control lens. Selectable landing energies are implemented for a sub-beam of the multi-beam by applying corresponding potentials to the control electrodes and the objective electrodes. A controller is configured to select corresponding potentials so a spatial relationship between an image plane of the system and all control electrodes and objective electrodes is the same for each selectable landing energy.

公开(公告)号：US20230282441A1

公开(公告)日：2023-09-07

申请号：US18158444

申请日：2023-01-23

Applicant: ASML Netherlands B.V.

Inventor： Weiming REN ,  Xuedong LIU ,  Xuerang HU ,  Zhongwei CHEN

IPC: H01J37/147 ,  H01J37/28 ,  H01J37/06 ,  H01J37/10

CPC classification number: H01J37/1474 ,  H01J37/1477 ,  H01J37/1478 ,  H01J37/28 ,  H01J37/06 ,  H01J37/10 ,  H01J2237/024 ,  H01J2237/0453 ,  H01J2237/0492 ,  H01J2237/103 ,  H01J2237/1205 ,  H01J2237/1516 ,  H01J2237/1536 ,  H01J2237/1534

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

公开(公告)号：US11699566B2

公开(公告)日：2023-07-11

申请号：US17987781

申请日：2022-11-15

Applicant: ViaMEMS Technologies, Inc.

Inventor： David Xuan-Qi Wang

IPC: H01J37/12 ,  C09K13/00 ,  C23C16/40 ,  H01J37/28

CPC classification number: H01J37/12 ,  C09K13/00 ,  C23C16/402 ,  C23C16/403 ,  H01J37/28 ,  H01J2237/1205

Abstract: An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors.
Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.

公开(公告)号：US20180233374A1

公开(公告)日：2018-08-16

申请号：US15873108

申请日：2018-01-17

Applicant: EBARA CORPORATION

Inventor： Ryo TAJIMA ,  Masahiro HATAKEYAMA ,  Kenichi SUEMATSU ,  Kiwamu TSUKAMOTO ,  Kenji WATANABE ,  Shoji YOSHIKAWA ,  Shinichi OKADA ,  Kenji TERAO

IPC: H01L21/3065 ,  H01J37/302 ,  H01J37/305 ,  H01J37/147

CPC classification number: H01L21/3065 ,  H01J37/073 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/244 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/043 ,  H01J2237/061 ,  H01J2237/06333 ,  H01J2237/06375 ,  H01J2237/083 ,  H01J2237/1205 ,  H01J2237/1516 ,  H01J2237/166 ,  H01J2237/204 ,  H01J2237/24514 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01L21/0273

Abstract: Provided is a method of adjusting an electron-beam irradiated area in an electron beam irradiation apparatus that deflects an electron beam with a deflector to irradiate an object with the electron beam, the method including: emitting an electron beam while changing an irradiation position on an adjustment plate by controlling the deflector in accordance with an electron beam irradiation recipe, the adjustment plate detecting a current corresponding to the emitted electron beam; acquiring a current value detected from the adjustment plate; forming image data corresponding to the acquired current value; determining whether the electron-beam irradiated area is appropriate based on the formed image data; and updating the electron beam irradiation recipe when the electron-beam irradiated area is determined not to be appropriate.

公开(公告)号：US20180037993A1

公开(公告)日：2018-02-08

申请号：US15786358

申请日：2017-10-17

Applicant: William M. Tong ,  Alan D. Brodie ,  Jeffrey Elam ,  Anil Mane

Inventor： William M. Tong ,  Alan D. Brodie ,  Jeffrey Elam ,  Anil Mane

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  H01J37/02 ,  B81B3/00 ,  H01J37/317 ,  C23C16/40 ,  H01J37/12

CPC classification number: C23C16/45529 ,  B81B3/0008 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C16/405 ,  H01J37/026 ,  H01J37/06 ,  H01J37/12 ,  H01J37/3174 ,  H01J2237/1205 ,  H01J2237/31794

Abstract: A digital pattern generator has a MEMS substrate with a plurality of doping layers and a plurality of insulating layers between respective doping layers. A plurality of lenslets are formed as holes through the substrate. A charge drain coating is applied to the inner surfaces of the lenslets. The charge drain coating drains electrons that come into contact with the charge drain coating so that the performance of the digital pattern generator will not be hindered by electron charge build-up. The charge drain coating includes a doping material that coalesces into clusters that are embedded within a high dielectric insulating material.

公开(公告)号：US20180025884A1

公开(公告)日：2018-01-25

申请号：US15595759

申请日：2017-05-15

Applicant: Frederick A. Flitsch

Inventor： Frederick A. Flitsch

IPC: H01J37/06 ,  H01J9/02 ,  H01J37/20 ,  H01J37/244 ,  H01J37/317 ,  H01J37/08

CPC classification number: H01J37/06 ,  G03F7/0002 ,  G03F9/00 ,  H01J9/022 ,  H01J37/08 ,  H01J37/20 ,  H01J37/244 ,  H01J37/248 ,  H01J37/317 ,  H01J37/3177 ,  H01J2237/1205 ,  H01J2237/20 ,  H01J2237/303 ,  H01J2237/304 ,  H01J2237/3174 ,  H01J2237/31759 ,  H01J2237/31798 ,  Y10T29/49004

Abstract: The present invention provides apparatus for an imaging system comprising a multitude of chemical emitting elements upon a substrate. In some embodiments the substrate may be approximately round with a radius of approximately one inch. Various methods relating to using and producing an imaging system of chemical emitters are disclosed.

公开(公告)号：US09824851B2

公开(公告)日：2017-11-21

申请号：US14052610

申请日：2013-10-11

Applicant: William M. Tong ,  Alan D. Brodie ,  Jeffrey Elam ,  Anil Mane

Inventor： William M. Tong ,  Alan D. Brodie ,  Jeffrey Elam ,  Anil Mane

IPC: H01J37/02 ,  H01J37/06 ,  B81B3/00 ,  H01J37/317 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01J37/12

CPC classification number: C23C16/45529 ,  B81B3/0008 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C16/405 ,  H01J37/026 ,  H01J37/06 ,  H01J37/12 ,  H01J37/3174 ,  H01J2237/1205 ,  H01J2237/31794

Abstract: A system and method associated with a charge drain coating are disclosed. The charge drain coating may be applied to surfaces of an electron-optical device to drain electrons that come into contact with the charge drain coating so that the performance of the electron-optical device will not be hindered by electron charge build-up. The charge drain coating may include a doping material that coalesces into clusters that are embedded within a high dielectric insulating material. The charge drain coating may be deposited onto the inner surfaces of lenslets of the electron-optical device.

公开(公告)号：US09697986B2

公开(公告)日：2017-07-04

申请号：US15380649

申请日：2016-12-15

Applicant: Frederick A. Flitsch

Inventor： Frederick A. Flitsch

IPC: H04N5/28 ,  G01J1/42 ,  H01L25/00 ,  H01J37/244 ,  H01J37/317

CPC classification number: H01J37/244 ,  B82B3/00 ,  G03F9/00 ,  H01J9/022 ,  H01J37/06 ,  H01J37/08 ,  H01J37/20 ,  H01J37/248 ,  H01J37/317 ,  H01J37/3177 ,  H01J2237/1205 ,  H01J2237/20 ,  H01J2237/303 ,  H01J2237/304 ,  H01J2237/3174 ,  H01J2237/31759 ,  H01J2237/31798 ,  Y10T29/49004

Abstract: The present invention provides apparatus for an imaging system comprising a multitude of imaging elements upon a substrate. In some embodiments the substrate may be approximately round with a radius of approximately one inch. Various methods relating to using and producing an imaging system are discussed.

公开(公告)号：US20170148609A1

公开(公告)日：2017-05-25

申请号：US14947241

申请日：2015-11-20

Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

Inventor： Benjamin John Cook ,  Dieter Winkler

IPC: H01J37/12 ,  H01J37/147

CPC classification number: H01J37/147 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/1205 ,  H01J2237/1516 ,  H01J2237/1532 ,  H01J2237/1534

Abstract: An electrostatic multipole device for influencing a charged particle beam propagating along an optical axis is described. The electrostatic multipole device comprises a substrate with at least one aperture opening for the charged particle beam, which extends along the optical axis through the substrate, and four or more electrodes which are formed on a first main surface of the substrate to influence the charged particle beam propagating through the aperture opening, wherein each of the four or more electrodes is arranged at a radial distance from a beam limiting edge of the aperture opening. Further, a method of manufacturing an electrostatic multipole device is described.

公开(公告)号：US09653254B2

公开(公告)日：2017-05-16

申请号：US15016743

申请日：2016-02-05

Applicant: Applied Materials Israel Ltd. ,  Carl Zeiss Microscopy GMBH

Inventor： Dirk Zeidler ,  Thomas Kemen ,  Anger Pascal ,  Antonio Casares ,  Christof Riedesel

IPC: H01J37/09 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/28 ,  H01J37/317 ,  H01J37/21

CPC classification number: H01J37/09 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/28 ,  H01J37/3177 ,  H01J2237/0453 ,  H01J2237/0458 ,  H01J2237/0492 ,  H01J2237/1205

Abstract: The present invention concerns a charged-particle multi-beamlet system that comprises a source of charged particles (301); a first multi-aperture plate (320) having plural apertures disposed in a charged particle beam path of the system downstream of the source; a first multi-aperture selector plate (313) having plural apertures; a carrier (340), wherein the first multi-aperture selector plate is mounted on the carrier; and an actuator (350) configured to move the carrier such that the first multi-aperture selector plate is disposed in the charged particle beam path of the system downstream of the source in a first mode of operation of the system, and such that the first multi-aperture selector plate is disposed outside of the charged particle beam path in a second mode of operation of the system. The source, the first multi-aperture plate and the carrier of the system are arranged such that a first number of charged particle beamlets is generated at a position downstream of both the first multi-aperture plate and the first multi-aperture selector plate in the first mode of operation, and that a second number of charged particle beamlets is generated at the position in the second mode of operation, wherein the first number of beamlets differs from the second number of beamlets.