公开(公告)号：US20200273658A1

公开(公告)日：2020-08-27

申请号：US16794948

申请日：2020-02-19

Applicant: EBARA CORPORATION

Inventor： Kenji WATANABE ,  Shinichi OKADA ,  Ryo TAJIMA ,  Tsutomu KARIMATA

IPC: H01J37/147 ,  H01J37/244

Abstract: Provided is an electron beam irradiation apparatus including: an aligner configured to perform an alignment of an electron beam by deflecting the electron beam; a deflector having a plurality of electrodes and configured to deflect the electron beam after passing through the aligner; and an adjuster configured to adjust deflection caused by the aligner, wherein the adjuster is configured to perform, on each of the plurality of electrodes, detecting an image of the electron beam by applying a test voltage to one of the plurality of electrodes and applying a reference voltage to the other electrodes, determine a position shift of the electron beam based on each position of the image of the electron beam corresponding to each electrode, and adjust deflection of the aligner so as to cancel the position shift of the electron beam.

公开(公告)号：US20190237293A1

公开(公告)日：2019-08-01

申请号：US16253767

申请日：2019-01-22

Applicant: EBARA CORPORATION

Inventor： Ryo TAJIMA

IPC: H01J37/147 ,  H01J37/20 ,  H01J37/06 ,  H01J37/30 ,  H01J37/302 ,  H01J37/317

Abstract: According to one embodiment, provided is a deflection sensitivity calculation method for calculating deflection sensitivity of a deflector in an electron beam irradiation apparatus that irradiates an irradiation object on a stage with an electron beam by causing the deflector to deflect the electron beam, the deflection sensitivity calculation method including: irradiating an area that covers an adjustment plate with an electron beam by scanning a deflection parameter that controls deflection of the deflector in a predetermined width; detecting a current value detected from the adjustment plate; forming an image corresponding to the detected current value, a number of pixels of the image being known; calculating the number of pixels of a portion corresponding to the adjustment plate in the formed image; and calculating the deflection sensitivity of the deflector.

公开(公告)号：US20180040452A1

公开(公告)日：2018-02-08

申请号：US15667040

申请日：2017-08-02

Applicant: EBARA CORPORATION

Inventor： Masahiro HATAKEYAMA ,  Ryo TAJIMA ,  Kenichi SUEMATSU ,  Kenji WATANABE ,  Yasushi TOMA ,  Kenji TERAO ,  Takeshi MURAKAMI

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/141

CPC classification number: H01J37/05 ,  H01J37/141 ,  H01J37/147 ,  H01J37/244 ,  H01J37/26 ,  H01J37/29

Abstract: An electron beam inspection device includes: a primary electron optical system that irradiates the surface of a sample with an electron beam; and a secondary electron optical system that gathers secondary electrons emitted from the sample and forms an image on the sensor surface of a detector. An electron image of the surface of the sample is obtained from a signal detected by the detector, and the sample is inspected. A cylindrical member that is formed with conductors stacked as an inner layer and an outer layer, and an insulator stacked as an intermediate layer is provided inside a lens tube into which the secondary electron optical system is incorporated. An electron orbital path is formed inside the cylindrical member, and the members constituting the secondary electron optical system are arranged outside the cylindrical member.

公开(公告)号：US20210012997A1

公开(公告)日：2021-01-14

申请号：US16879151

申请日：2020-05-20

Applicant: EBARA CORPORATION

Inventor： Takehide HAYASHI ,  Ryo TAJIMA ,  Tatsuya KOHAMA ,  Kenji WATANABE ,  Tsutomu KARIMATA

IPC: H01J37/147 ,  H01J37/244 ,  H01J37/14 ,  H01J37/32

Abstract: An adjustment method for adjusting a path of an electron beam passing through an electron beam device including at least one unit having at least one lens and at least one aligner electrode, and a detector configured to detect the electron beam, the method including: a step of measuring, by a coordinate measuring machine, an assembly tolerance for each of a plurality of the units constituting the electron beam device; a step of determining a shift amount of the electron beam at a position of the at least one of the lenses; a step of determining an electrode condition for each of a plurality of the aligner electrodes included in the units in a manner such that a shift amount of the electron beam is to be the determined shift amount; and a step of setting each of the aligner electrodes to the corresponding determined electrode condition.

公开(公告)号：US20180233374A1

公开(公告)日：2018-08-16

申请号：US15873108

申请日：2018-01-17

Applicant: EBARA CORPORATION

Inventor： Ryo TAJIMA ,  Masahiro HATAKEYAMA ,  Kenichi SUEMATSU ,  Kiwamu TSUKAMOTO ,  Kenji WATANABE ,  Shoji YOSHIKAWA ,  Shinichi OKADA ,  Kenji TERAO

IPC: H01L21/3065 ,  H01J37/302 ,  H01J37/305 ,  H01J37/147

CPC classification number: H01L21/3065 ,  H01J37/073 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/244 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/043 ,  H01J2237/061 ,  H01J2237/06333 ,  H01J2237/06375 ,  H01J2237/083 ,  H01J2237/1205 ,  H01J2237/1516 ,  H01J2237/166 ,  H01J2237/204 ,  H01J2237/24514 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01L21/0273

Abstract: Provided is a method of adjusting an electron-beam irradiated area in an electron beam irradiation apparatus that deflects an electron beam with a deflector to irradiate an object with the electron beam, the method including: emitting an electron beam while changing an irradiation position on an adjustment plate by controlling the deflector in accordance with an electron beam irradiation recipe, the adjustment plate detecting a current corresponding to the emitted electron beam; acquiring a current value detected from the adjustment plate; forming image data corresponding to the acquired current value; determining whether the electron-beam irradiated area is appropriate based on the formed image data; and updating the electron beam irradiation recipe when the electron-beam irradiated area is determined not to be appropriate.

公开(公告)号：US20140291515A1

公开(公告)日：2014-10-02

申请号：US14220719

申请日：2014-03-20

Applicant: EBARA CORPORATION

Inventor： Ryo TAJIMA ,  Kenichi SUEMATSU ,  Shoji YOSHIKAWA

IPC: H01J37/26 ,  G06T7/00

CPC classification number: H01J37/222 ,  H01J37/244 ,  H01J37/265 ,  H01J37/285

Abstract: An inspection system includes a primary optical system configured to irradiate a charged particle or an electromagnetic wave as a beam, a movable unit configured to hold an inspection target and move the target through a position where the beam is irradiated, and a TDI sensor configured to integrate an amount of secondary charged particles in a predetermined direction to sequentially transfer the integrated amount. The secondary charged particles are obtained by irradiating the beam onto the target while moving the movable unit in the predetermined direction. The inspection system further includes a prevention module configured to prevent an arrival of the beam at the target side or an arrival of the secondary charged particles at the TDI sensor during a time period from one transfer to the following transfer after the elapse of a predetermined length of time from the one transfer and until the following transfer.

Abstract translation: 检查系统包括被配置为照射带电粒子或作为光束的电磁波的主光学系统，被配置为保持检查目标并将目标移动通过射束的位置的移动单元，以及被配置为 在预定方向上积分一定量的二次带电粒子以顺序地转移积分量。 通过在沿着预定方向移动可移动单元的同时将光束照射到目标物上而获得二次带电粒子。 所述检查系统还包括防止模块，所述防止模块被配置为在经过预定长度之后的一次转移到后续转移的时间段期间防止所述束到达所述目标侧或所述二次带电粒子到达所述TDI传感器 的时间从一次转移到下一次转移。

公开(公告)号：US20230393085A1

公开(公告)日：2023-12-07

申请号：US18326051

申请日：2023-05-31

Applicant: EBARA CORPORATION

Inventor： Kenji WATANABE ,  Takeshi MURAKAMI ,  Yasushi TOMA ,  Ryo TAJIMA ,  Tsutomu KARIMATA

IPC: G01N23/2251

CPC classification number: G01N23/2251 ,  G01N2223/20 ,  G01N2223/418

Abstract: Provided is a method of evaluating a deviation of a trajectory of a primary electron beam in a primary optical system in an electron beam observation device including the primary optical system that irradiates a sample with the primary electron beam including a plurality of primary electrons and a secondary optical system that detects, by a detector, a secondary electron beam including a plurality of secondary electrons emitted from the sample irradiated with the primary electron beam.

公开(公告)号：US20150371813A1

公开(公告)日：2015-12-24

申请号：US14747488

申请日：2015-06-23

Applicant: EBARA CORPORATION

Inventor： Masahiro HATAKEYAMA ,  Kenichi SUEMATSU ,  Ryo TAJIMA ,  Kiwamu TSUKAMOTO ,  Kenji TERAO ,  Shoji YOSHIKAWA

IPC: H01J37/20 ,  H01J37/305 ,  H01J37/22 ,  H01J37/073 ,  H01J37/10

CPC classification number: H01J37/20 ,  H01J37/226 ,  H01J37/3005 ,  H01J37/3023 ,  H01J37/3056 ,  H01J37/3177 ,  H01J2237/24535

Abstract: A surface processing apparatus is an apparatus which performs surface processing on an inspection object 20 by irradiating the inspection object with an electron beam. A surface processing apparatus includes: an electron source 10 (including lens system that controls beam shape of electron beam) which generates an electron beam; a stage 30 on which an inspection object 20 to be irradiated with the electron beam is set; and an optical microscope 110 for checking a position to be irradiated with the electron beam. The current value of the electron beam which irradiates the inspection object 20 is set at 10 nA to 100 A.

Abstract translation: 表面处理装置是通过用电子束照射检查对象对检查对象物20进行表面处理的装置。 表面处理装置包括：产生电子束的电子源10（包括控制电子束的光束形状的透镜系统）; 设置有用电子束照射的检查对象物20的台架30; 以及用于检查用电子束照射的位置的光学显微镜110。 将检查对象物20照射的电子束的当前值设定为10nA〜100A。