公开(公告)号：US20230071331A1

公开(公告)日：2023-03-09

申请号：US17987781

申请日：2022-11-15

Applicant: ViaMEMS Technologies, Inc.

Inventor： David Xuan-Qi Wang

IPC: H01J37/12 ,  C09K13/00

Abstract: An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors.
Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.

公开(公告)号：US20230041174A1

公开(公告)日：2023-02-09

申请号：US17856899

申请日：2022-07-01

Applicant: ViaMEMS Technologies, Inc.

Inventor： David Xuan-Qi Wang

IPC: H01J37/12 ,  C09K13/00

Abstract: An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors.
Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.

公开(公告)号：US11699566B2

公开(公告)日：2023-07-11

申请号：US17987781

申请日：2022-11-15

Applicant: ViaMEMS Technologies, Inc.

Inventor： David Xuan-Qi Wang

IPC: H01J37/12 ,  C09K13/00 ,  C23C16/40 ,  H01J37/28

CPC classification number: H01J37/12 ,  C09K13/00 ,  C23C16/402 ,  C23C16/403 ,  H01J37/28 ,  H01J2237/1205

Abstract: An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors.
Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.